Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Tunnel magnetoresistor and manufacturing method thereof

A technology of tunnel magnetoresistance and ferromagnetic layer, applied in the field of magnetic sensors, can solve the problem that the linear range of tunnel magnetoresistance cannot be effectively improved, and achieve the effect of increasing the saturation field and increasing the linear range.

Pending Publication Date: 2021-05-07
蚌埠希磁科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the problem that the linear range of tunnel magnetoresistance is difficult to be effectively improved in the prior art, so as to provide a tunnel magnetoresistance and its manufacturing method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tunnel magnetoresistor and manufacturing method thereof
  • Tunnel magnetoresistor and manufacturing method thereof
  • Tunnel magnetoresistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a tunnel magnetoresistor and a manufacturing method thereof. The tunnel magnetoresistor comprises a first pinning layer, a free layer arranged opposite to the first pinning layer, a tunneling barrier layer positioned between the first pinning layer and the free layer, a pinned layer located between the first pinning layer and the tunneling barrier layer, and a second pinning layer positioned on one side, opposite to the tunneling barrier layer, of the free layer. The first pinning layer and the pinned layer form a first pinning field, the second pinning layer and the free layer form a second pinning field, and the directions of the first pinning field and the second pinning field are parallel to the opposite surfaces of the first pinning layer and the second pinning layer; the included angle between the direction of the first pinning field and the direction of the second pinning field is 70-110 degrees; and a saturation field of the tunnel magnetoresistor is increased so that the linear range of the tunnel magnetoresistor is enlarged.

Description

technical field [0001] The invention relates to the technical field of magnetic sensors, in particular to a tunnel magnetoresistance and a manufacturing method thereof. Background technique [0002] Magnetic sensing technology is widely used in the fields of new energy, intelligent transportation, industrial control, smart home appliances and intelligent network. Currently being widely promoted is TMR (Tunneling Magneto Resistance) technology, that is, tunneling magnetoresistance, which is commonly used in the reading head part of the hard disk read-write head. [0003] Currently commonly used tunnel magnetoresistance has a narrow linear range. In order to improve the linear range of tunnel magnetoresistance, engineers and technicians need to process hard magnetic material blocks next to the tunnel magnetoresistance sensing area by sputtering in tunnel magnetoresistance processing. The magnitude of the magnetic field generated by the material block is used to adjust the lin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L43/08H01L43/10H01L43/12H01L43/02
CPCH10N50/80H10N50/10H10N50/01H10N50/85
Inventor 王连伟何路光涂恩平韩荷福
Owner 蚌埠希磁科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com