Microcrystalline Si-SbxTe1-x composite phase change material and preparation method thereof

A technology of si-sbxte1-x and composite phase change materials, which is applied in metal material coating process, ion implantation plating, electrical components, etc., can solve problems such as material instability, achieve good thermal stability, and reduce power consumption , the effect of improving operational stability

Active Publication Date: 2012-07-04
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, experiments have shown that SiSb x Te 1-x The phase change material of the system is a composite phase of amorphous Si and SbTe crystals in the crystalline state. Since amorphous Si cannot be crystallized at 500-600 degrees Celsius, and there are many defects in amorphous Si, SiSb x Te 1-x The material is unstable, so there is a lot of room for improvement in improving the stability and rewritable times of phase change memory devices based on this material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microcrystalline Si-SbxTe1-x composite phase change material and preparation method thereof
  • Microcrystalline Si-SbxTe1-x composite phase change material and preparation method thereof
  • Microcrystalline Si-SbxTe1-x composite phase change material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] In this example, by preparing microcrystalline Si-Sb 2 Te 3 Composite phase change material, and it is tested to further illustrate the technical solution of the present invention. Concrete preparation method is as follows:

[0023] (1) Using PVD equipment to grow Si on a glass sheet 2 Sb 2 Te 3 Material. For example, methods such as magnetron sputtering can be used to obtain stoichiometric thin film materials by regulating process parameters (sputtering power, working pressure, etc.), wherein the technology of growing thin films by PVD technology is known to those skilled in the art, so in This will not be repeated. This embodiment preferably grows Si 2 Sb 2 Te 3 material, but the present invention is not limited thereto, it can also grow Si-Sb of other proportions x Te 1-x Material, 0.1≤x≤0.9. Si-Sb in PVD deposited state x Te 1-x Among the materials, Si exists in an amorphous form.

[0024] (2) the Si 2 Sb 2 Te 3 material placed in N 2 Annealed at ...

Embodiment 2

[0030] The microcrystalline Si-Sb prepared in embodiment one 2 Te 3 Composite phase change material is applied in phase change memory, and its performance is further analyzed.

[0031] (a) Using PVD equipment to Si 2 Sb 2 Te 3 The material is grown on a tapered substrate prepared with electrodes;

[0032] (b) repeat steps (2)-(4) in implementing one to form microcrystalline Si-Sb 2 Te 3 Composite phase change materials;

[0033] (c) Continue to complete the subsequent steps of tape-out, including growing TiN, etching, growing Al, etching, etc., to produce a complete phase-change memory unit;

[0034] (d) Perform write, erase, and read operations on the completed phase-change memory unit, and study the storage characteristics and fatigue characteristics of the material.

[0035] figure 2 For the test results, it can be seen that the microcrystalline Si-Sb 2 Te 3 Composite phase change materials are applied to phase change memory. The microcrystalline Si changes the di...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a microcrystalline Si-SbxTe1-x composite phase change material and a preparation method thereof. The composite phase change material is formed by composition of microcrystalline-state Si and a phase change material SbxTe1-x, wherein x is not less than 0.1 and not more than 0.9. The preparation method comprises the steps of forming an amorphous Si-SbxTe1-x material by PVD (physical vapor deposition), then annealing in a hydrogen atmosphere to form the microcrystalline Si-SbxTe1-x composite phase change material, and finally heating and dehydrogenating to complete the preparation of the material. In the microcrystalline Si-SbxTe1-x composite phase change material disclosed by the invention, the existence of the microcrystalline Si can effectively inhibit oxidation, so that mutual diffusion of the Si and the SbxTe1-x can be hindered, and the microcrystalline Si-SbxTe1-x composite phase change material is more stable. Simultaneously, the microcrystalline-state Si can change the current distribution in phase change so as to be conductive to reducing power consumption, prolonging service life and improving operation stability of a phase change memory.

Description

technical field [0001] The invention relates to phase change materials and preparation methods, especially to a kind of microcrystalline Si and Sb x Te 1-x The composite phase change material and the preparation method thereof belong to the related field of semiconductor memory. Background technique [0002] Non-volatile semiconductor memory occupies an important position in information technology, its sales are increasing year by year, its application is ubiquitous in consumer electronics, and it has a broad market. At present, the most commonly used non-volatile semiconductor memory is flash memory, and new memories of other principles are also emerging. For example, phase-change memory, ferroelectric memory, RRAM (Resistive Random Access Memory), etc., among which, phase-change memory is considered to be the most promising candidate for the next-generation non-volatile memory. [0003] The principle of phase change memory is based on the change of resistance caused by ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/58H01L45/00
Inventor 宋志棠夏梦姣饶峰刘波封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap