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Microcrystalline Si-SbxTe1-x composite phase change material and preparation method thereof
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A si-sbxte1-x, composite phase change material technology, applied in metal material coating process, ion implantation plating, electrical components and other directions, can solve problems such as material instability
Active Publication Date: 2013-09-11
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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[0004] However, experiments have shown that SiSb x Te 1-x The phase change material of the system is a composite phase of amorphous Si and SbTe crystals in the crystalline state. Since amorphous Si cannot be crystallized at 500-600 degrees Celsius, and there are many defects in amorphous Si, SiSb x Te 1-x The material is unstable, so there is a lot of room for improvement in improving the stability and rewritable times of phase change memory devices based on this material
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Embodiment 1
[0022] In this example, by preparing microcrystalline Si-Sb 2 Te 3 Composite phase change material, and it is tested to further illustrate the technical solution of the present invention. Concrete preparation method is as follows:
[0023] (1) Using PVD equipment to grow Si on a glass sheet 2 Sb 2 Te 3 Material. For example, methods such as magnetron sputtering can be used to obtain stoichiometric thin film materials by regulating process parameters (sputtering power, working pressure, etc.), wherein the technology of growing thin films by PVD technology is known to those skilled in the art, so in This will not be repeated. This embodiment preferably grows Si 2 Sb 2 Te 3 material, but the present invention is not limited thereto, it can also grow Si-Sb of other proportions x Te 1-x Material, 0.1≤x≤0.9. Si-Sb in PVD deposited state x Te 1-x Among the materials, Si exists in an amorphous form.
[0024] (2) the Si 2 Sb 2 Te 3 material placed in N 2 Annealed at ...
Embodiment 2
[0030] The microcrystalline Si-Sb prepared in embodiment one 2 Te 3Composite phase change material is applied in phase change memory, and its performance is further analyzed.
[0031] (a) Using PVD equipment to Si 2 Sb 2 Te 3 The material is grown on a tapered substrate prepared with electrodes;
[0032] (b) repeat steps (2)-(4) in implementing one to form microcrystalline Si-Sb 2 Te 3 Composite phase change materials;
[0033] (c) Continue to complete the subsequent steps of tape-out, including growing TiN, etching, growing Al, etching, etc., to produce a complete phase-change memory unit;
[0034] (d) Perform write, erase, and read operations on the completed phase-change memory unit, and study the storage characteristics and fatigue characteristics of the material.
[0035] figure 2 For the test results, it can be seen that the microcrystalline Si-Sb 2 Te 3 The composite phase change material is applied to the phase change memory, and the microcrystalline Si cha...
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Abstract
The invention discloses a microcrystalline Si-SbxTe1-x composite phase change material and a preparation method thereof. The composite phase change material is formed by composition of microcrystalline-state Si and a phase change material SbxTe1-x, wherein x is not less than 0.1 and not more than 0.9. The preparation method comprises the steps of forming an amorphous Si-SbxTe1-x material by PVD (physical vapor deposition), then annealing in a hydrogen atmosphere to form the microcrystalline Si-SbxTe1-x composite phase change material, and finally heating and dehydrogenating to complete the preparation of the material. In the microcrystalline Si-SbxTe1-x composite phase change material disclosed by the invention, the existence of the microcrystalline Si can effectively inhibit oxidation, so that mutual diffusion of the Si and the SbxTe1-x can be hindered, and the microcrystalline Si-SbxTe1-x composite phase change material is more stable. Simultaneously, the microcrystalline-state Si can change the current distribution in phase change so as to be conductive to reducing power consumption, prolonging service life and improving operation stability of a phase change memory.
Description
technical field [0001] The invention relates to phase change materials and preparation methods, especially to a kind of microcrystalline Si and Sb x Te 1-x The composite phase change material and the preparation method thereof belong to the related field of semiconductor memory. Background technique [0002] Non-volatile semiconductor memory occupies an important position in information technology, its sales are increasing year by year, its application is ubiquitous in consumer electronics, and it has a broad market. At present, the most commonly used non-volatile semiconductor memory is flash memory, and new memories of other principles are also emerging. For example, phase-change memory, ferroelectric memory, RRAM (Resistive Random Access Memory), etc., among which, phase-change memory is considered to be the most promising candidate for the next-generation non-volatile memory. [0003] The principle of phase change memory is based on the change of resistance caused by ...
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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/58H01L45/00
Inventor 宋志棠夏梦姣饶峰刘波封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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