Tunnel magnetoresistor and manufacturing method thereof

A technology of tunnel magnetoresistance and a manufacturing method, applied in the field of magnetic sensors, can solve the problems of magnetization curve drift, unstable initial state of tunnel magnetoresistance vortex magnetization, etc., and achieve the effect of avoiding unstable initial state

Pending Publication Date: 2021-05-07
蚌埠希磁科技有限公司
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the problems in the prior art that the initial state of the tunnel magnetoresistance vortex magnetization...

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  • Tunnel magnetoresistor and manufacturing method thereof
  • Tunnel magnetoresistor and manufacturing method thereof
  • Tunnel magnetoresistor and manufacturing method thereof

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Embodiment Construction

[0032] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0033] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...

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Abstract

The invention provides a tunnel magnetoresistor and a manufacturing method thereof. The tunnel magnetoresistor comprises a first pinning layer, a free layer arranged opposite to the first pinning layer, a tunneling barrier layer located between the first pinning layer and the free layer, and a second pinning layer positioned on one side, back to the tunneling barrier layer, of the free layer. The second pinning layer can provide a weak exchange bias field for the free layer, and after an external environment temperature or an external magnetic field is removed, the exchange bias field can pin the free layer in the direction of an initial state. Therefore, the problem that a magnetization curve drifts due to a fact that the initial state of the tunnel magnetoresistor vortex magnetization is unstable and the external environment changes easily is solved, and the effects of stabilizing the free layer and improving the temperature stability of the free layer are achieved.

Description

technical field [0001] The invention relates to the technical field of magnetic sensors, in particular to a tunnel magnetoresistance and a manufacturing method thereof. Background technique [0002] Magnetic sensing technology is widely used in the fields of new energy, intelligent transportation, industrial control, smart home appliances and intelligent network. Currently being widely promoted is TMR (Tunneling Magneto Resistance) technology, that is, Tunneling Magneto Resistance. [0003] At present, the commonly used tunneling magnetoresistance with vortex magnetization effect has the common problem that the initial state of vortex magnetization is unstable, and it is easily affected by changes in the external environment, resulting in the drift of the magnetization curve. The thermal stability and magnetic stability of the vortex magnetization curve are relatively low. Poor, the magnetic curve tends to drift when an external magnetic field or external temperature change...

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Application Information

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IPC IPC(8): H01L43/08H01L43/10H01L43/12H01L43/02
CPCH10N50/80H10N50/10H10N50/01H10N50/85
Inventor 何路光王连伟涂恩平韩荷福
Owner 蚌埠希磁科技有限公司
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