33 results about "Platinum silicide" patented technology

The method of manufacturing the semiconductor device comprises forming a transistor including a gate electrode and a source / drain diffused layer over a semiconductor substrate, forming a nickel platinum film over the semiconductor substrate, covering the gate electrode and the source / drain diffused layer, making a first thermal processing to react the nickel platinum film with the source / drain diffused layer to form a nickel platinum silicide film, and removing an unreacted part of the nickel platinum film using a chemical liquid of 71° C. or more containing hydrogen peroxide.

A method of fabricating a silicide layer on a silicon region of a semiconductor structure, the method comprising the steps of: providing a semiconductor structure having at least one silicon region on a surface thereof; depositing a layer comprising nickel and platinum on the at least one silicon layer; annealing the semiconductor structure and the nickel / platinum layer to react the nickel and the platinum with underlying silicon to form a nickel-platinum silicide, wherein annealing step takes place at temperature of between 680° C. and 720° C.

The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region. Preferably, each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region is essentially free of metal and metal silicide. More preferably, the method comprises the steps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching, high-temperature annealing, and aqua regia etching.

A technique capable of reducing threshold voltage and reducing high-temperature heat treatment after forming a gate electrode is provided. An n-type MIS transistor or a p-type MIS transistor is formed on an active region isolated by an element isolation region of a semiconductor substrate. In the n-type MIS transistor, a gate electrode is formed through a gate insulating film, and the gate electrode is composed of a hafnium silicide film. On the other hand, in the p-type MIS transistor, a gate electrode is formed through a gate insulating film, and the gate electrode is composed of a platinum silicide film. Also, the gate electrodes are formed after the activation annealing (heat treatment) for activating impurities implanted into a source region and a drain region.

A substrate having at least one silicon device is provided. A nickel platinum alloy layer is formed on the substrate. A rapid thermal process is performed to react the nickel platinum alloy layer with the silicon device to produce a nickel platinum silicide. A passivation layer is formed on the nickel platinum silicide followed by using a solution consisting of nitric acid and hydrochloric acid to remove unreacted portions of the nickel platinum alloy layer.

The present invention provides a method of manufacturing a semiconductor device, comprising forming an electrode pattern made of silicon on a gate insulating film in an n-MOS region and a p-MOS region of a semiconductor substrate, masking the n-MOS region including the first electrode pattern with a first insulating film pattern, forming a first metal film made of platinum all over the surface, forming a gate electrode consisting of a platinum silicide in the p-MOS region, forming an silicon oxide film on the surface of the gate electrode by oxidation, dissolving away a non-reacting Pt film, removing the first insulating film pattern, masking the p-MOS region including the electrode pattern with a second insulating film pattern, forming a second metal film made of europium all over the surface, and forming a gate electrode consisting of a europium silicide in the n-MOS region.

Tips including a platinum silicide at an apex of a single crystal silicon tip are provided herein. Also, techniques for creating a tip are provided. The techniques include depositing an amount of platinum (Pt) on a single crystal silicon tip, annealing the platinum and single crystal silicon tip to form a platinum silicide, and selectively etching the platinum with respect to the formed platinum silicide.

Tips including a platinum silicide at an apex of a single crystal silicon tip are provided herein. Also, techniques for creating a tip are provided. The techniques include depositing an amount of platinum (Pt) on a single crystal silicon tip, annealing the platinum and single crystal silicon tip to form a platinum silicide, and selectively etching the platinum with respect to the formed platinum silicide.

The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region. Preferably, each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region is essentially free of metal and metal silicide. More preferably, the method comprises the steps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching, high-temperature annealing, and aqua regia etching.

Described herein is a semiconductor structure and method of manufacture. The semiconductor structure includes a plurality of semiconductor fins on a substrate and a plurality of raised active regions, wherein each raised active region is located on sidewalls of a corresponding semiconductor fin among said plurality of semiconductor fins. The raised active regions are laterally spaced from any other of the raised active regions. Each raised active region comprises angled sidewall surfaces that are not parallel or perpendicular to a topmost horizontal surface of said substrate. The raised active regions are silicon germanium (SiGe). The semiconductor structure includes a metal semiconductor alloy region contacting at least said angled sidewall surfaces of at least two adjacent raised active regions. The semiconductor alloy region includes a material selected from the group consisting of nickel silicide, nickel-platinum silicide and cobalt silicide.

A technique capable of reducing threshold voltage and reducing high-temperature heat treatment after forming a gate electrode is provided. An n-type MIS transistor or a p-type MIS transistor is formed on an active region isolated by an element isolation region of a semiconductor substrate. In the n-type MIS transistor, a gate electrode is formed through a gate insulating film, and the gate electrode is composed of a hafnium silicide film. On the other hand, in the p-type MIS transistor, a gate electrode is formed through a gate insulating film, and the gate electrode is composed of a platinum silicide film. Also, the gate electrodes are formed after the activation annealing (heat treatment) for activating impurities implanted into a source region and a drain region.

A method of fabricating a metal silicide layer over a substrate is provided. First, a hard mask layer is formed over a gate formed on a substrate and a portion of the substrate is exposed. Thereafter, a first metal silicide layer, which is a cobalt silicide or a titanium silicide layer, is formed on the exposed substrate. After that, the hard mask layer is removed and a second metal silicide layer is formed over the gate, wherein a material of the second metal silicide layer is selected from a group consisting of nickel silicide, platinum silicide, palladium silicide and nickel alloy. Since different metal silicide layers are formed on the substrate and the gate, the problem of having a high resistance in lines with a narrow line width and the problem of nickel silicide forming spikes and pipelines in the source region and the drain region are improved.

The present invention provides a method of manufacturing a semiconductor device, comprising forming an electrode pattern made of silicon on a gate insulating film in an n-MOS region and a p-MOS region of a semiconductor substrate, masking the n-MOS region including the first electrode pattern with a first insulating film pattern, forming a first metal film made of platinum all over the surface, forming a gate electrode consisting of a platinum silicide in the p-MOS region, forming an silicon oxide film on the surface of the gate electrode by oxidation, dissolving away a non-reacting Pt film, removing the first insulating film pattern, masking the p-MOS region including the electrode pattern with a second insulating film pattern, forming a second metal film made of europium all over the surface, and forming a gate electrode consisting of a europium silicide in the n-MOS region.

A microelectronic device is formed by forming a platinum-containing layer on a substrate of the microelectronic device. A cap layer is formed on the platinum-containing layer so that an interface between the cap layer and the platinum-containing layer is free of platinum oxide. The cap layer is etchable in an etch solution which also etches the platinum-containing layer. The cap layer may be formed on the platinum-containing layer before platinum oxide forms on the platinum-containing layer. Alternatively, platinum oxide on the platinum-containing layer may be removed before forming the cap layer. The platinum-containing layer may be used to form platinum silicide. The platinum-containing layer may be patterned by forming a hard mask or masking platinum oxide on a portion of the top surface of the platinum-containing layer to block the wet etchant.

To improve the performance of semiconductor devices. Over an n+-type semiconductor region for source / drain of an n-channel type MISFET and a first gate electrode, and over a p+-type semiconductor region for source / drain of a p-channel type MISFET and a second gate electrode, which are formed over a semiconductor substrate, a metal silicide layer including nickel platinum silicide is formed by a salicide process. After that, a tensile stress film is formed over the whole face of the semiconductor substrate, and then the tensile stress film over the p-channel type MISFET is removed by dry-etching, and, after a compression stress film is formed over the whole face of the semiconductor substrate, the compression stress film over the n-channel type MISFET is removed by dry-etching. The Pt concentration in the metal silicide layer is highest at the surface, and becomes lower as the depth from the surface increases.

A method of preparing organohalosilanes comprising combining an organohalide having the formula RX (I), wherein R is a hydrocarbyl group having 1 to 10 carbon atoms and X is fluoro, chloro, bromo, or iodo, with a contact mass comprising at least 2% (w / w) of a palladium suicide of the formula PdxSiy (II), wherein x is an integer from 1 to 5 and y is 1 to 8, or a platinum suicide of formula Pt2Si (III), wherein z is 1 or 2, in a reactor at a temperature from 250 to 700° C. to form an organohalosilane.

A method of fabricating a metal silicide layer over a substrate is provided. First, a hard mask layer is formed over a gate formed on a substrate and a portion of the substrate is exposed. Thereafter, a first metal silicide layer, which is a cobalt silicide or a titanium silicide layer, is formed on the exposed substrate. After that, the hard mask layer is removed and a second metal silicide layer is formed over the gate, wherein a material of the second metal silicide layer is selected from a group consisting of nickel silicide, platinum silicide, palladium silicide and nickel alloy. Since different metal silicide layers are formed on the substrate and the gate, the problem of having a high resistance in lines with a narrow line width and the problem of nickel silicide forming spikes and pipelines in the source region and the drain region are improved.

The method of manufacturing the semiconductor device comprises forming a transistor including a gate electrode and a source / drain diffused layer over a semiconductor substrate, forming a nickel platinum film over the semiconductor substrate, covering the gate electrode and the source / drain diffused layer, making a first thermal processing to react the nickel platinum film with the source / drain diffused layer to form a nickel platinum silicide film, and removing an unreacted part of the nickel platinum film using a chemical liquid of 71° C. or more containing hydrogen peroxide.

To improve the performance of semiconductor devices. Over an n+-type semiconductor region for source / drain of an n-channel type MISFET and a first gate electrode, and over a p+-type semiconductor region for source / drain of a p-channel type MISFET and a second gate electrode, which are formed over a semiconductor substrate, a metal silicide layer including nickel platinum silicide is formed by a salicide process. After that, a tensile stress film is formed over the whole face of the semiconductor substrate, and then the tensile stress film over the p-channel type MISFET is removed by dry-etching, and, after a compression stress film is formed over the whole face of the semiconductor substrate, the compression stress film over the n-channel type MISFET is removed by dry-etching. The Pt concentration in the metal silicide layer is highest at the surface, and becomes lower as the depth from the surface increases.

A microelectronic device is formed by forming a platinum-containing layer on a substrate of the microelectronic device. A cap layer is formed on the platinum-containing layer so that an interface between the cap layer and the platinum-containing layer is free of platinum oxide. The cap layer is etchable in an etch solution which also etches the platinum-containing layer. The cap layer may be formed on the platinum-containing layer before platinum oxide forms on the platinum-containing layer. Alternatively, platinum oxide on the platinum-containing layer may be removed before forming the cap layer. The platinum-containing layer may be used to form platinum silicide. The platinum-containing layer may be patterned by forming a hard mask or masking platinum oxide on a portion of the top surface of the platinum-containing layer to block the wet etchant.

Described herein is a semiconductor structure and method of manufacture. The semiconductor structure includes a plurality of semiconductor fins on a substrate and a plurality of raised active regions, wherein each raised active region is located on sidewalls of a corresponding semiconductor fin among said plurality of semiconductor fins. The raised active regions are laterally spaced from any other of the raised active regions. Each raised active region comprises angled sidewall surfaces that are not parallel or perpendicular to a topmost horizontal surface of said substrate. The raised active regions are silicon germanium (SiGe). The semiconductor structure includes a metal semiconductor alloy region contacting at least said angled sidewall surfaces of at least two adjacent raised active regions. The semiconductor alloy region includes a material selected from the group consisting of nickel silicide, nickel-platinum silicide and cobalt silicide.

The invention discloses a manufacturing method for forming nickel-platinum silicide for improving Schottky electric leakage uniformity of a groove. The manufacturing method comprises the following steps: step 1, loading a groove gate structure wafer sputtered with nickel-platinum metal into a wafer boat of an alloy furnace tube; 2, pushing the wafer boat into a constant-temperature alloy furnace tube at a relatively low speed, and doping nickel and platinum metals on the surface of the silicon substrate in the moving process; step 3, doping the nickel-platinum alloy into the silicon substrate in a constant-temperature furnace tube through a high-temperature process for a certain time to form silicide; 4, pushing the crystal boat out of the furnace tube at a low speed after the alloying time is finished; 5, taking out the wafer of the wafer boat within a certain time range; the difference value between the furnace feeding speed of the wafer boat in the step 2 and the furnace discharging speed of the wafer boat in the step 4 is not greater than 5mm / min. The temperature and time in the alloying process are controlled by controlling the speed of entering and exiting from the furnace, so that the uniformity of electric leakage parameters of products is ensured, the product yield is improved, and the production cost is reduced.

Provided is a technical window method for removing unreacted nickel-platinum silicide in an increased wet method. The method comprises the steps that S1) certain amount of nickel and platinum alloy is removed from an NH4OH and H2O2 mixed solution SC-1 at 70 DEG C or hydrochloric acid (HCL) at normal temperature for the first time; S2) residual nickel and platinum alloy is completely removed from an NH4OH and H2O2 mixed solution SPM at 130 to 200 DEG C; and S3) cleaning is carried out in the NH4OH and H2O2 mixed solution SC-1. According to the method, certain amount of nickel and platinum alloy is removed from the NH4OH and H2O2 mixed solution SC-1 at 70 DEG C or hydrochloric acid (HCL) at normal temperature for the first time; the residual nickel and platinum alloy is completely removed from the NH4OH and H2O2 mixed solution SPM at 130 to 200 DEG C due to the fact that proper excessive etching is carried out due to the excellent selectivity ratio of SPM to the nickel-platinum alloy; and thus, a technical window can be etched in the increased wet method.

An optical assembly for placement on a medical device. The optical assembly has a diaphragm suspended over and above an optical cavity. The optical cavity has sensor dots formed thereon. The diaphragm is covered with a biocompatible platinum silicide layer.

Provided is a technical window method for removing unreacted nickel-platinum silicide in an increased wet method. The method comprises the steps that S1) certain amount of nickel and platinum alloy is removed from an NH4OH and H2O2 mixed solution SC-1 at 70 DEG C or hydrochloric acid (HCL) at normal temperature for the first time; S2) residual nickel and platinum alloy is completely removed from an NH4OH and H2O2 mixed solution SPM at 130 to 200 DEG C; and S3) cleaning is carried out in the NH4OH and H2O2 mixed solution SC-1. According to the method, certain amount of nickel and platinum alloy is removed from the NH4OH and H2O2 mixed solution SC-1 at 70 DEG C or hydrochloric acid (HCL) at normal temperature for the first time; the residual nickel and platinum alloy is completely removed from the NH4OH and H2O2 mixed solution SPM at 130 to 200 DEG C due to the fact that proper excessive etching is carried out due to the excellent selectivity ratio of SPM to the nickel-platinum alloy; and thus, a technical window can be etched in the increased wet method.

The invention relates to a self-aligned light angle sensor using thin metal silicide anodes. Aspects of the embodiments are directed to non-contact systems, methods and devices for optical detection of objects in space at precise angles. This method involves the design and fabrication of photodiode arrays for measuring angular response using self-aligned Schottky platinum silicide (PtSi) PIN photodiodes (PN-diodes with an intrinsic layer sandwiched in between) that provide linear angular measurements from incident light in multiple dimensions. A self-aligned device is defined as one in which is not sensitive to photomask layer registrations. This design eliminates device offset between "left" and right" channels for normal incident light as compared to more conventional PIN diode constructions.

The invention provides a flash memory device and a preparation method thereof, and the preparation method comprises the steps: forming a first stack structure on the surface of a substrate of a storage region at a flash memory unit side, the first stack structure comprises a titanium layer, a nickel-platinum alloy layer with a first thickness and a titanium nitride layer, and then executing a thermal annealing process, the first stacked structure is converted into a second stacked structure (the stacked substrate, the nickel-platinum silicide layer, the titanium silicide layer, the nickel-platinum alloy layer with the second thickness and the titanium nitride layer), then the titanium nitride layer and the nickel-platinum alloy layer with the second thickness in the second stacked structure are removed, and finally the thermal annealing process is executed. According to the method, the titanium layer and the nickel-platinum alloy layer are formed on the surface of the substrate, the nickel-platinum silicide layer is obtained through the reaction after thermal annealing, the titanium silicide layer can serve as an etching sacrificial layer of a subsequent contact hole etching process, the situation of excessive etching of the subsequent contact hole etching process is avoided, and the electrical performance of the device is improved.

Aspects of the embodiments are directed to non-contact systems, methods and devices for optical detection of objects in space at precise angles. This method involves the design and fabrication of photodiode arrays for measuring angular response using self-aligned Schottky platinum silicide (PtSi) PIN photodiodes (PN-diodes with an intrinsic layer sandwiched in between) that provide linear angular measurements from incident light in multiple dimensions. A self-aligned device is defined as one in which is not sensitive to photomask layer registrations. This design eliminates device offset between “left” and right” channels for normal incident light as compared to more conventional PIN diode constructions.

The invention discloses a fast recovery diode and a manufacturing method thereof, relating to the field of micro-electronics, and solving the problem of speed uniformity of switching DIE to DIE and WAFER to WAFER of the fast recovery diode manufactured by the traditional technology. The fast recovery diode of the invention comprises a silicon substrate, a heavy doping anode, field oxide, a platinum silicide layer and an even silicon dioxide layer, wherein the heavy doping anode is deposited on the silicon substrate, the field oxide is deposited on the silicon substrate and is arranged on two sides of the heavy doping anode, the platinum silicide layer is formed on the heavy doping anode, and the even silicon dioxide layer is formed on the platinum silicide layer. The method comprises the following steps: forming the even silicide dioxide layer on the silicon substrate on which the heavy doping anode and the field oxide are deposited after the cleaning; depositing a metal layer with the sputtering or evaporating method; and by using the alloy technology, forming even silicide nodes. The invention is applied to manufacture of the fast recovery diode.