Fast recovery diode and manufacturing method thereof

Abstract

The invention discloses a fast recovery diode and a manufacturing method thereof, relating to the field of micro-electronics, and solving the problem of speed uniformity of switching DIE to DIE and WAFER to WAFER of the fast recovery diode manufactured by the traditional technology. The fast recovery diode of the invention comprises a silicon substrate, a heavy doping anode, field oxide, a platinum silicide layer and an even silicon dioxide layer, wherein the heavy doping anode is deposited on the silicon substrate, the field oxide is deposited on the silicon substrate and is arranged on two sides of the heavy doping anode, the platinum silicide layer is formed on the heavy doping anode, and the even silicon dioxide layer is formed on the platinum silicide layer. The method comprises the following steps: forming the even silicide dioxide layer on the silicon substrate on which the heavy doping anode and the field oxide are deposited after the cleaning; depositing a metal layer with the sputtering or evaporating method; and by using the alloy technology, forming even silicide nodes. The invention is applied to manufacture of the fast recovery diode.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a fast recovery diode and a manufacturing method thereof. Background technique [0002] Fast Recovery Diode (FRD for short) is a high-speed switching device that introduces deep-level metal impurities on the basis of ordinary diodes to form a resurrection center, thereby increasing the switching speed. Figure 1A-Figure 1C It is a schematic diagram of the manufacturing method of the prior art FRD, such as Figures 1A-1C As shown, firstly, a heavily doped N-type anode is formed on a P-type silicon substrate by a traditional process, and after the cleaning before metal deposition is completed, the metal is deposited directly, and in the time interval between the two steps, the silicon wafer A non-uniform natural oxide layer (silicon dioxide layer) will be formed rapidly on the surface, thereby affecting the uniformity of the metal silicide thickness, resulting in the ubiquity of chi...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a fast recovery diode, which can solve the problem of DIE toDIE and WAFER to WAFER switching speed uniformity

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