High sensitivity testing structure for evaluating plasma antenna effect

A testing structure and plasma technology, which is applied in semiconductor/solid-state device testing/measurement, electric solid-state devices, semiconductor devices, etc., can solve the problems of insufficient detection sensitivity of charge monitoring chips, complex structure of charge monitoring chips, and high manufacturing costs.
CN1452230AInactive Publication Date: 2003-10-29MACRONIX INT CO LTD
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Patent Information

Authority / Receiving Office
CN ยท China
Current Assignee / Owner
MACRONIX INT CO LTD
Publication Date
2003-10-29
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

A high-sensitivity testing structure for evaluating the antenna effect of plasma is composed of a substrate, and ONO dielectric layer which consists of a lower oxide layer, a silicon nitride layer and an upper oxide layer, an electrode, and an antenna structure connected with said electrode for collecting the charges induced by plasma.
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Description

technical field

[0001] The present invention relates to a test wafer for evaluating and monitoring the plasma potential (plasma potential) on the wafer surface, in particular to a kind of NROM (NROM-like) antenna test structure, which is formed on a test wafer and can be used for plasma The resulting charge accumulation is monitored with high sensitivity and provides quantitative data. Background technique

[0002] With the miniaturization of integrated circuits, multilayer interconnection technology is becoming more and more complex. At this point, high-density anisotropic plasma etching plays an important role in the semiconductor process. Plasma etching technology can define trench structures with extremely small line widths in the dielectric layer and produce vertical trench profile sidewalls. For example, reactive-ion-etching (RIE) plasma is often used in semiconductor processes to achieve precise dimensional control. Plasma formation is us...

Claims

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