Preparation method for SiGe-based heterogeneous SPiN diode applied to reconfigurable annular antenna

Abstract

The invention relates to a preparation method for a SiGe-based heterogeneous SPiN diode applied to a reconfigurable annular antenna. The preparation method comprises the steps of selecting a SiGeOI substrate of a certain crystal orientation, and setting an isolation region on the SiGeOI substrate; forming a second protection layer on the surface of the SiGeOI substrate; forming a second isolation region pattern on the second protection layer through a photoetching process; etching the second protection layer and the SiGeOI substrate in appointed positions of the second isolation region pattern through a dry etching process to form a P type trench and an N type trench; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in top layer SiGe of the SiGeOI substrate by adopting ion implantation; and forming leads on the SiGeOI substrate to complete the preparation of the SiGe-based heterogeneous SPiN diode. By adoption of the embodiment, the high-performance SiGe-based heterogeneous SPiN diode, which is applicable to formation of the solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a SiGe-based heterogeneous SPiN diode used for a reconfigurable loop antenna. Background technique [0002] In the rapidly developing modern communication system, in order to meet the requirements of communication, navigation, detection, etc., multiple transmitting and receiving antennas need to work on one platform at the same time. In this case, more and more loads and electromagnetic compatibility between antennas become increasingly prominent problems. Reconfigurable antennas can dynamically select different working modes according to different environments, so that one antenna can realize the functions of multiple antennas, and it has made an important exploration for effectively solving the problems of electromagnetic interference and system miniaturization. [0003] At present, there is a type of frequency reconfigurable a...

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Problems solved by technology

[0003] At present, there is a type of frequency reconfigurable antenna on the market. The material used for the important component SPIN diode is bulk silicon material. This material has the problem of low carrier mobility in the intrinsic region, which affects the current carrying capacity of the intrinsic region of the SPIN diode. subconcentration, thereby affecting its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, requires high equipment, and is not compatible with existing processes; and Diffusion technology is used, although the junction depth is deep, but at the same time, the area of ​​P region and N region is relatively large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of SPIN diodes, resulting in poor controllability of solid-state plasma concentration and distribution.

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