The invention relates to a preparation method and a device of a SiGe-Si-SiGe heterogeneous Ge-based solid-state plasma PiN diode. The preparation method comprises the steps of (a), selecting a GeOI substrate; (b), setting an isolation region in the GeOI substrate; (c), forming a P type trench and an N type trench in the GeOI substrate through a photoetching process; (d), adopting an ion implantation process to form a P type active region and an N type active region in top layer Ge of the GeOI substrate; and (e) performing lead hole photoetching and passivating treatment to complete the preparation of the heterogeneous Ge-based solid-state plasma PiN diode. According to the embodiments, the high-performance Ge-based solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and the ion implantation process.