40results about How to "Increased Solid State Plasma Concentration" patented technology

The invention relates to a preparation method for a SiGe-based heterogeneous SPiN diode applied to a reconfigurable annular antenna. The preparation method comprises the steps of selecting a SiGeOI substrate of a certain crystal orientation, and setting an isolation region on the SiGeOI substrate; forming a second protection layer on the surface of the SiGeOI substrate; forming a second isolation region pattern on the second protection layer through a photoetching process; etching the second protection layer and the SiGeOI substrate in appointed positions of the second isolation region pattern through a dry etching process to form a P type trench and an N type trench; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in top layer SiGe of the SiGeOI substrate by adopting ion implantation; and forming leads on the SiGeOI substrate to complete the preparation of the SiGe-based heterogeneous SPiN diode. By adoption of the embodiment, the high-performance SiGe-based heterogeneous SPiN diode, which is applicable to formation of the solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

The invention relates to a preparation method for a GaAs / Ge / GaAs heterostructure SPiN diode string used for a sleeve antenna. The preparation method comprises the steps of (a), selecting a GeOI substrate; (b), etching a top layer Ge layer of the GeOI substrate to form a first trench and a second trench in the top layer Ge layer; (c), depositing a GaAs material in the first trench and the second trench; (d), performing P type ion implantation on the GaAs material in the first trench by adopting an ion implantation process to form a P type active region, and performing N type ion implantation on the GaAs material in the second trench to form an N type active region; and (e), forming lead holes in the surfaces of the P type active region and the N type active region and performing metal sputtering to form the GaAs / Ge / GaAs heterostructure SPiN diode. According to the embodiments, the high-performance Ge-based SPiN diode string, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and the ion implantation process.

The invention relates to a Ge-based solid-state plasma PiN diode and a preparation method therefor. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and setting an isolation region in the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench, wherein the depths of the P type trench and the N type trench are smaller than the thickness of top layer Ge of the GeOI substrate; performing ion implantation in the P type trench and the N type trench to form a first P type active region and a first N type active region; filling the P type trench and the N type trench, and adopting ion implantation to form a second P type active region and a second N type active region in the top layer Ge of the GeOI substrate; and forming leads on the GeOI substrate to complete the preparation of the Ge-based solid-state plasma PiN diode. According to the embodiments, the high-performance Ge-based solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

The invention relates to a preparation method for a Ge-based heterogeneous solid-state plasma diode applied to an annular antenna. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and setting an isolation region on the GeOI substrate; forming a second protection layer on the surface of the GeOI substrate; forming a second isolation region pattern on the second protection layer through a photoetching process; etching the second protection layer and the GeOI substrate in appointed positions of the second isolation region pattern through a dry etching process to form a P type trench and an N type trench; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in top layer Ge of the GeOI substrate by adopting ion implantation; and forming leads on the GeOI substrate to complete the preparation of the Ge-based heterogeneous solid-state plasma diode. According to the embodiments, the high-performance heterogeneous Ge-based solid-state plasma diode, which is applicable to formation of the solid-state plasma antenna, can be prepared through a deep trench isolation technology and an ion implantation process.

The invention relates to a preparation method for an AlAs / Ge / AlAs solid-state plasma PiN diode string used for a sleeve antenna. The preparation method comprises the steps of selecting a GeOI substrate, and setting an isolation region on the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench; depositing an AlAs material in the P type trench and the N type trench, and performing ion implantation on the AlAs material in the P type trench and the N type trench to form a P type active region and an N type active region; and forming leads on the surfaces of the P type active region and the N type active region to complete the preparation of the AlAs / Ge / AlAs solid-state plasma PiN diode string. According to the embodiment, the high-performance Ge-based plasma PiN diode string, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

The invention relates to a method for preparing SiGe-based plasma pin diode for reconstructing holographic antennas. The method comprises: selecting a SiGeOI substrate of a crystal orientation; arranging an isolation region on the SiGeOI substrate; etching the substrate to form a P-type groove and an N-type groove wherein the depths of the P-type groove and the N-type groove are smaller than the thickness at the top SiGe layer of the substrate; forming a first P-type active region and a first N-type active region in the P-type groove and the N-type groove by ion implantation; filling the P-type groove and the N-type groove; forming a second P-type active region and a second N-type active region in the top SiGe layer of the substrate by ion implantation; and forming lead wires on the substrate to complete the preparation of the SiGe-based plasma pin diode. The embodiments of the present invention are capable of preparing and providing a high performance SiGe-based plasma pin diode suitable for forming a solid-state plasma antenna using a deep trench isolation technique and an ion implantation process.

The invention relates to a preparation method of a GaAs-based horizontal plasma pin diode for a multi-layer holographic antenna. The multi-layer holographic antenna comprises a semiconductor substrate GeOI, an antenna module, a first holographic round ring and a second holographic round ring, wherein the antenna module, the first holographic round ring and the second holographic round ring all comprises GaAs-based plasma pin diodes which are sequentially connected in series. The preparation method of the GaAs-based plasma pin diode comprises the steps of selecting a GeOI substrate in a certain crystal direction, depositing a GaAs layer on a surface of the substrate and forming an isolation region by metal-organic chemical vapor deposition (MOCVD); etching the substrate to form a P-type groove and an N-type groove and form a first P-type active region and a first N-type active region; and filling the P-type groove and N-type groove, forming a lead on the substrate to complete the preparation of the GaAs-based plasma pin diode. According to the embodiment, the high-performance GaAs-based plasma pin diode can be prepared and provided for forming the multi-layer holographic antenna by a deep groove isolation technology and an ion injection process.

The invention relates to a manufacturing method for an AlAs / Ge / AlAs structure-based plasma pin diode used in a multilayered holographic antenna. The manufacturing method comprises the steps of selecting a GeOI substrate, and setting an isolation region on the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench; depositing an AlAs material in the P type trench and the N type trench, and performing ion implantation on the AlAs material in the P type trench and the N type trench to form a P type active region and an N type active region; and forming leads on the surfaces of the P type active region and the N type active region to complete the manufacturing of the AlAs / Ge / AlAs structure-based plasma pin diode. According to the embodiment, the high-performance Ge-based plasma pin diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

The invention relates to a preparation method for a GaAs / Ge / GaAs heterogeneous SPiN diode applied to an annular antenna. The preparation method comprises the steps of selecting a GeOI substrate; etching a top layer Ge layer of the GeOI substrate to form a first trench and a second trench in the top layer Ge layer; depositing a GaAs material in the first trench and the second trench; performing P type ion implantation on the GaAs material in the first trench through an ion implantation process to form a P type active region, and performing N type ion implantation on the GaAs material in the second trench to form an N type active region; and forming lead holes in the surfaces of the P type active region and the N type active region and performing metal sputtering to form the GaAs / Ge / GaAs heterogeneous structured SPiN diode. According to the embodiment, the high-performance GaAs / Ge / GaAs heterogeneous structure-based SPiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

The invention relates to a SPiN diode with a GaAs-Ge-GaAs heterostructure and a preparation method of the SPiN diode. The preparation method comprises the following steps: (1) selecting a GeOI substrate; (b) etching a Ge layer as a top layer of the GeOI substrate to form a first groove and a second groove in the Ge layer as the top layer; (c) depositing GaAs materials in the first groove and the second groove respectively; (d) carrying out P-type ion implantation on the GaAs material in the first groove by utilizing an ion implantation process to form a P-type active region, and carrying out N-type ion implantation on the GaAs material in second first groove by utilizing second ion implantation process to form an N-type active region; and (e) forming lead wire holes in the surfaces of the P-type active region and the N-type active region respectively, and sputtering metal to form the SPiN diode with the GaAs-Ge-GaAs heterostructure. According to the SPiN diode disclosed by the embodiment of the invention, by utilizing a deep trench isolation technology and the ion implantation process, the high-performance Ge-based SPiN diode suitable for forming a solid-state plasma antenna can be prepared and supplied.

The invention relates to a preparation method of a heterogeneous Ge-based pin diode string in a reconfigurable multilayer holographic antenna. The preparation method comprises the steps of: selecting a GeOI substrate in a crystal orientation, and setting an isolation region in the GeOI substrate; etching the GeOI substrate to form P-type grooves and N-type grooves, wherein the depth of the P-type grooves and the N-type grooves is less than the thickness of top layer Ge of the GeOI substrate; filling the P-type grooves and the N-type grooves, and adopting ion implantation to form a P-type active region and an N-type active region in the top layer Ge of the GeOI substrate; and forming a lead wire on the GeOI substrate, so as to complete the preparation of the heterogeneous Ge-based pin diodes. The preparation method provided by the invention can prepare and provide high-performance Ge-based plasma pin diodes suitable for forming a solid-state plasma antenna by utilizing the deep trench isolation technology and the ion implantation process.

The invention relates to a preparation method and a device of a Si-Ge-Si heterogeneous Ge-based solid-state plasma PiN diode. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and setting an isolation region in the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench, wherein the depths of the P type trench and the N type trench are smaller than the thickness of top layer Ge of the GeOI substrate; filling the P type trench and the N type trench, and performing an ion implantation process to form a P type active region and an N type active region in the P type trench and the N type trench; and forming leads on the GeOI substrate to complete the preparation of the heterogeneous Ge-based solid-state plasma PiN diode. According to the embodiments, the high-performance heterogeneous Ge-based solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and the ion implantation process.

The invention relates to a preparation method of a GaAs / Ge / GaAs SPiN diode string for a reconfigurable dipole antenna. The reconfigurable dipole antenna comprises a GeOI substrate, an antenna arm, a coaxial feeding line and a DC bias line, wherein the antenna arm comprises a plurality of GaAs / Ge / GaAs SPiN diode strings. The preparation method of the GaAs / Ge / GaAs SPiN diode string comprises the steps of selecting the GeOI substrate; etching a top Ge layer of the GeOI substrate to form a first groove and a second groove; depositing GaAs materials in the first groove and the second groove, performing P-type ion injection on the GaAs material in the first groove to form a P-type active region, and performing N-type ion injection on the GaAs material in the second groove to form an N-type active region; and forming lead holes in surfaces of the P-type active region and the N-type active region, and performing metal sputtering to form the GaAs / Ge / GaAs SPiN diode string which is formed by sequentially connecting the GaAs / Ge / GaAs SPiN diodes in an end-to-end way. The preparation method disclosed by the invention can be used for the GaAs / Ge / GaAs SPiN diode string applicable to a high-performance antenna.

The invention relates to a solid-state plasma PiN diode of an AlAs-Ge-AlAs structure and a preparation method of the solid-state plasma PiN diode. The preparation method comprises the steps of selecting a GeOI substrate and arranging an isolation area in the GeOI substrate; etching the GeOI substrate to form a P-type groove and an N-type groove; depositing AlAs materials into the P-type groove and the N-type groove and carrying out ion implantation on the AlAs materials in the P-type groove and the N-type groove to form a P-type active area and an N-type active area; and forming a lead on the surfaces of the P-type active area and the N-type active area to complete preparation of the solid-state plasma PiN diode of the AlAs-Ge-AlAs structure. The high-performance Ge-based solid-state plasma PiN diode suitable for forming a solid-state plasma antenna can be prepared and provided by adopting a deep groove isolation technology and an ion implantation technology.

The invention relates to a preparation method for a heterogeneous SiGe-based plasma pin diode string used for a sleeve antenna. The preparation method comprises the steps of selecting a SiGeOI substrate of a certain crystal orientation, and setting an isolation region on the SiGeOI substrate; etching the substrate to form a P type trench and an N type trench, wherein the depths of the P type trench and the N type trench are smaller than the thickness of the top layer SiGe of the substrate; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in top layer SiGe of the substrate by adopting ion implantation; and forming leads on the substrate to complete the preparation of the heterogeneous SiGe-based plasma pin diode. According to the embodiments, the high-performance heterogeneous SiGe-based plasma pin diode, which is applicable to formation of the solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

The invention discloses a preparation method of a heterogeneous GaAs-Ge-GaAs pin diode for a multi-layer holographic antenna. The preparation method comprises the steps of (a) selecting a GeOI substrate; (b) etching a top Ge layer of the GeOI substrate to form a first groove and a second groove in the top Ge layer; (c) depositing a GaAs material in the first groove and the second groove; (d) performing P-type ion implantation on the GaAs material in the first groove by utilizing an ion implantation technology to form a P-type active region and performing N-type ion implantation on the GaAs material in the second groove to form an N-type active region; and (e) forming lead holes in the surfaces of the P-type active region and the N-type active region and sputtering metal to form the heterogeneous GaAs-Ge-GaAs pin diode. The method can prepare and provide the high-performance Ge-base pin diode applicable to forming a solid plasma antenna by utilizing a deep groove isolation technique and the ion implantation technology.

The invention relates to a GaAs-based solid-state plasma PiN diode and a preparation method therefor. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and depositing a GaAs layer and setting an isolation region on the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench, wherein the depths of the P type trench and the N type trench are smaller than the thickness of top layer GaAs of the substrate; performing ion injection in the P type trench and the N type trench to form a first P type active region and a first N type active region; filling the P type trench and the N type trench, and adopting ion injection to form a second P type active region and a second N type active region in the top layer GaAs of the substrate; and forming leads on the substrate to complete the preparation of the GaAs-based solid-state plasma PiN diode. According to the embodiments, the high-performance GaAs-based solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared by adopting a deep trench isolation technology and the ion injection process.

The invention relates to a preparation method and device of a heterogeneous SiGe-based solid-state plasma PiN diode. The preparation method comprises the steps of selecting a SiGeOI substrate of one crystal orientation and arranging an isolation area in the SiGeOI substrate; etching the substrate to form a P-type groove and an N-type groove, wherein the depths of the P-type groove and the N-type groove are smaller than the thickness of top-layer SiGe of the substrate; filling the P-type groove and the N-type groove and forming a P-type active area and an N-type active area in the top-layer SiGe of the substrate by adopting ion implantation; and forming a lead on the substrate to complete preparation of the heterogeneous SiGe-based solid-state plasma PiN diode. The high-performance heterogeneous SiGe-based solid-state plasma PiN diode suitable for forming a solid-state plasma antenna can be prepared and provided by adopting a deep groove isolation technology and an ion implantation technology.

The invention relates to a preparation method and a device of a SiGe-Si-SiGe heterogeneous Ge-based solid-state plasma PiN diode. The preparation method comprises the steps of (a), selecting a GeOI substrate; (b), setting an isolation region in the GeOI substrate; (c), forming a P type trench and an N type trench in the GeOI substrate through a photoetching process; (d), adopting an ion implantation process to form a P type active region and an N type active region in top layer Ge of the GeOI substrate; and (e) performing lead hole photoetching and passivating treatment to complete the preparation of the heterogeneous Ge-based solid-state plasma PiN diode. According to the embodiments, the high-performance Ge-based solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and the ion implantation process.

The invention relates to a preparation method of a heterojunction SiGe-based pin diode for a reconfigurable multi-layer holographic antenna. The preparation method comprises the steps of selecting a SiGeOI substrate in a certain crystal direction, and arranging an isolation region on the SiGeOI substrate; etching the substrate to form a P-type groove and an N-type groove, wherein the depths of the P-type groove and the N-type groove are smaller than the thickness of a top layer SiGe of the substrate; filling the P-type groove and the N-type groove, and forming a P-type active region and an N-type active region in the top layer SiGe of the substrate by ion injection; and forming a lead on the substrate to complete the preparation of the heterojunction SiGe-based plasma pin diode. According to the embodiment, the high-performance heterojunction SiGe-based plasma pin diode can be prepared and provided for forming a solid-state plasma antenna by a deep groove isolation technology and an ion injection process.

The invention relates to a preparation method of a heterogeneous Ge-based PIN diode string in a reconfigurable annular antenna. The preparation method includes: selecting a GeOI substrate of a certain crystal direction, and arranging an isolating area in the GeOI substrate; etching the GeOI substrate to form a P-type groove and an N-type groove, wherein depth of the P-type groove and the N-type groove is smaller than thickness of Ge on the top layer of the GeOI substrate; oxidizing the P-type groove and the N-type groove to form oxidized layers on the inner walls of the P-type groove and the N-type groove; utilizing a wet etching process to etch the oxidized layers on the inner walls of the P-type groove and the N-type groove to flatten the inner walls of the P-type groove and the N-type groove; filling the P-type groove and the N-type groove; forming a lead on the GeOI substrate to complete preparation of the Ge-based PIN diode. By utilizing deep groove isolating technology and ion implantation technology, the high-performance heterogeneous Ge-based PIN diode string suitable for forming solid-state plasma antennas can be prepared and provided.

The invention relates to a SiGe-based solid-state plasma PiN diode and a preparation method thereof. The preparation method comprises the following steps: selecting a SiGeOI substrate of a certain crystal orientation, and setting an isolation area on the SiGeOI substrate; etching the substrate to form a P-type channel and an N-type channel, wherein the depth of the P-type channel and N-type channel is less than the thickness of the top-layer SiGe of the substrate; forming a first P-type active area and a first N-type active area in the P-type channel and N-type channel by ion implantation; filling the P-type channel and N-type channel, and forming a second P-type active area and a second N-type active area in the top-layer SiGe of the substrate by ion implantation; and forming a lead on the substrate to finish the preparation of a SiGe-based solid-state plasma PiN diode. In the embodiment of the invention, the high-performance SiGe-based solid-state plasma PiN diode suitable for forming a solid-state plasma antenna is prepared and provided by using the deep trench isolation technology and ion implantation technology.

The invention relates to a preparation method for a Ge-based heterogeneous SPiN diode applied to a reconfigurable annular antenna. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and forming a first protection layer on the surface; forming a first isolation region pattern on the first protection layer by a photoetching process; etching the first protection layer and the GeOI substrate in appointed positions of the first isolation region pattern through a dry etching process to form an isolation groove, wherein the depth is greater than or equal to the thickness of top layer Ge of the GeOI substrate; filling the isolation groove to form an isolation region of the Ge-based heterogeneous SPiN diode; etching the GeOI substrate to form a P type trench and an N type trench, wherein the depth is smaller than the thickness of top layer Ge of the GeOI substrate; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in the P type trench and the N type trench by adopting ion implantation; and forming leads on the GeOI substrate to complete the preparation of the Ge-based heterogeneous SPiN diode. According to the embodiments, the Ge-based heterogeneous SPiN diode, which is applicable to formation of the solid-state antenna, can be prepared through a deep trench isolation technology and an ion implantation process.