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Preparation method of heterojunction SiGe-based pin diode for reconfigurable multi-layer holographic antenna

A holographic antenna and diode technology, used in antennas, loop antennas, antenna parts and other directions, can solve the problems of low carrier mobility, large injection dose and energy, and low integration, and achieve high carrier mobility. , improve the breakdown voltage, improve the effect of device performance

Inactive Publication Date: 2017-06-13
XIAN CREATION KEJI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, the materials used in pin diodes used in reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode, which in turn affects Its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is not compatible with existing processes; and the use of diffusion process, although The junction depth is deep, but at the same time, the area of ​​the P region and the N region is relatively large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the pin diode, resulting in poor controllability of the solid-state plasma concentration and distribution

Method used

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  • Preparation method of heterojunction SiGe-based pin diode for reconfigurable multi-layer holographic antenna
  • Preparation method of heterojunction SiGe-based pin diode for reconfigurable multi-layer holographic antenna
  • Preparation method of heterojunction SiGe-based pin diode for reconfigurable multi-layer holographic antenna

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Embodiment 1

[0058] An embodiment of the present invention provides a method for preparing a heterogeneous SiGe-based pin diode for a reconfigurable multilayer holographic antenna. The heterogeneous SiGe-based plasmonic pin diode is used to manufacture a reconfigurable multilayer holographic antenna (1). See figure 1 , figure 1 A schematic structural diagram of a reconfigurable multi-layer holographic antenna provided by an embodiment of the present invention. The holographic antenna (1) comprises: a semiconductor substrate (11), an antenna module (13), a first holographic ring (15) and a second holographic ring (17); the antenna module (13), the Both the first holographic ring (15) and the second holographic ring (17) are fabricated on the semiconductor substrate (11) by semiconductor technology; wherein, the antenna module (13), the first holographic Both the ring (15) and the second holographic ring (17) include pin diode strings connected in series;

[0059] Please refer to figure...

Embodiment 2

[0107] See Figure 8a-Figure 8r , Figure 8a-Figure 8r A schematic diagram of another method for preparing a heterogeneous SiGe-based pin diode for a reconfigurable multilayer holographic antenna provided by the embodiment of the present invention. On the basis of the first embodiment above, to prepare a channel length of 22 nm (solid-state plasma region A solid-state plasma pin diode with a length of 100 microns) is taken as an example for detailed description, and the specific steps are as follows:

[0108] Step 1, substrate material preparation steps:

[0109] (1a) if Figure 8a As shown, the SiGeOI substrate 101 with (100) orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 , the thickness of the top layer SiGe is 50 μm;

[0110] (1b) if Figure 8b As shown, the method of chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is used to deposit a layer of first SiO with a thickness of 40 nm on the SiGe la...

Embodiment 3

[0138] Please refer to Figure 9 , Figure 9 A device structure diagram of another heterogeneous SiGe-based plasmonic pin diode provided by an embodiment of the present invention. The heterogeneous SiGe-based plasmonic pin diode employs the above-mentioned as figure 2 The preparation method shown is made, specifically, the SiGe-based plasma pin diode is prepared and formed on the SiGeOI substrate 301, and the P region 304, the N region 305 of the pin diode and the lateral direction are located between the P region 304 and the N region 305 The I-regions between them are located in the top layer SiGe302 of the substrate. Wherein, the pin diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top SiGe layer.

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Abstract

The invention relates to a preparation method of a heterojunction SiGe-based pin diode for a reconfigurable multi-layer holographic antenna. The preparation method comprises the steps of selecting a SiGeOI substrate in a certain crystal direction, and arranging an isolation region on the SiGeOI substrate; etching the substrate to form a P-type groove and an N-type groove, wherein the depths of the P-type groove and the N-type groove are smaller than the thickness of a top layer SiGe of the substrate; filling the P-type groove and the N-type groove, and forming a P-type active region and an N-type active region in the top layer SiGe of the substrate by ion injection; and forming a lead on the substrate to complete the preparation of the heterojunction SiGe-based plasma pin diode. According to the embodiment, the high-performance heterojunction SiGe-based plasma pin diode can be prepared and provided for forming a solid-state plasma antenna by a deep groove isolation technology and an ion injection process.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a heterogeneous SiGe-based pin diode used for a reconfigurable multilayer holographic antenna. Background technique [0002] A wireless communication system that can dynamically adapt to constantly changing propagation characteristics of the environment will be the key to next-generation communication applications, and an antenna is an extremely important component in any wireless device because it transmits and receives radio waves. The performance of the antenna represents the performance of most wireless devices, so the performance of the antenna is a critical part of the system. [0003] A reconfigurable antenna is an antenna that changes its radiation, polarization, and frequency characteristics by changing its physical structure. Among them, the frequency reconfigurable antenna has been paid attention by many researchers be...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/161H01L21/329H01L29/868H01Q1/22H01Q7/00
CPCH01L29/6609H01L29/0649H01L29/161H01L29/868H01Q1/2283H01Q7/00
Inventor 尹晓雪张亮
Owner XIAN CREATION KEJI CO LTD
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