93 results about "Solid state plasma" patented technology

The invention relates to a preparation method for a SiGe-based heterogeneous SPiN diode applied to a reconfigurable annular antenna. The preparation method comprises the steps of selecting a SiGeOI substrate of a certain crystal orientation, and setting an isolation region on the SiGeOI substrate; forming a second protection layer on the surface of the SiGeOI substrate; forming a second isolation region pattern on the second protection layer through a photoetching process; etching the second protection layer and the SiGeOI substrate in appointed positions of the second isolation region pattern through a dry etching process to form a P type trench and an N type trench; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in top layer SiGe of the SiGeOI substrate by adopting ion implantation; and forming leads on the SiGeOI substrate to complete the preparation of the SiGe-based heterogeneous SPiN diode. By adoption of the embodiment, the high-performance SiGe-based heterogeneous SPiN diode, which is applicable to formation of the solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

The invention discloses an all solid-state plasma near coupling cloaking antenna array and a control method thereof. The all solid-state plasma near coupling cloaking antenna array comprises solid-state plasma antenna units, an upper layer dielectric substrate, a micro-strip coupling feeder line, a bottom layer dielectric substrate and a grounding metal plate. The solid-state plasma antenna units comprise semiconductor plasma units, plasma unit control chips, line control wires and queue control wires. All the plasma units are controlled independently through a peripheral control circuit, the plasma antenna units of different shapes are formed, and reconstruction of an antenna structure is achieved. The antenna structure is compact and simple, the cost is low, the antenna structure can work in a 1 GHz-100GHz wave band, the limitation that a traditional gas plasma antenna can not work in a high frequency band easily is broken through, and the advantages of being capable of achieving beam scanning, good in cloaking performance and the like are achieved.

The invention discloses an adjustable narrowband wave-absorbing device based on a plasma meta-material. The adjustable narrowband wave-absorbing device comprises a bottom metal reflecting plate, a dielectric substrate and solid-state plasma resonator units, the dielectric substrate and the solid-state plasma resonator units are arranged on the metal reflecting plate, solid-state plasma is implemented by an array composed of PIN units, the PIN units are isolated from one another through isolation layers, and the PIN unit array is controlled and excited through a programmable logic array loadedon two ends of the PIN unit array to obtain the solid-state plasma. Each solid-state plasma resonator unit has two kinds of working states including the excited state and the unexcited state. the wave-absorbing device has a good absorption effect on TE polarized waves, the excitation region of each resonator unit formed by the solid-state plasma is controlled in a programming mode, excitation of different resonator units can be achieved, and therefore the aim of maintaining the high absorption rate of the wave-absorbing device in a high frequency band and dynamically controlling progressive optimization of the absorption rate in a low frequency band is achieved, and the working frequency of the wave-absorbing device can efficiently cover the whole X wave band when the excitation region isselected appropriately.

The invention discloses a wide-angle insensitive plasma meta-material broadband wave absorber of which the structure comprises a bottom metal reflecting plate and a dielectric substrate and solid state plasma resonant units which are arranged on the metal plate. The plasma meta-material is formed through special design, the solid state plasma is implemented by the array formed by the PIN units, the PIN units are isolated by isolating layers, and the PIN unit array is controlled and excited through a programmable logic array loaded on the two ends so as to obtain the solid state plasma. The solid state plasma resonant units have two working states: the excited state and the unexcited data. The plasma meta-material wave absorber has great absorbing effect for the TE and TM polarized waves and has great absorbing effect for the wide-angle incident electromagnetic waves and controls the excitation area of the resonant units formed by the solid state plasma to realize excitation of different resonant units through programming so as to achieve the objective of dynamic regulation and control of different frequency of the wave absorber.

The invention discloses a honeycomb distributed controllable plasma metamaterial narrow-band wave absorber. A periodic structure unit employs a special honeycomb hexagonal structure and comprises a bottom-layer metal reflection plate, a dielectric substrate and a solid-state plasma resonant unit, wherein the dielectric substrate is arranged above the metal plate, solid-state plasma is achieved byan array comprising PIN units, and a PIN unit array is controlled and simulated by programmable logic arrays loaded at two ends of the solid-state plasma so as to obtain the solid-state plasma. The plasma metamaterial narrow-band wave absorber has a good absorption effect on a TE polarization wave and has a favorable absorption effect on electromagnetic wave incident at a large angle, a simulationregion of a resonant unit comprising the solid-state plasma is controlled by a programming mode, the simulation of different resonant units can be achieved, so that the purpose of dynamically controlling different frequencies of the wave absorber is achieved, the narrow-band absorption of the wave absorber is achieved, and the working frequency of the wave absorber can cover the whole X band under the condition that the simulation region is appropriately selected.

The invention discloses an electromagnetic super-surface polarization converter based on solid state plasma. The electromagnetic super-surface polarization converter comprises a second dielectric substrate, a first dielectric substrate and an underlying metal reflector plate which are laminated from top to bottom in sequence; and a resonance unit, capable of realizing linear-circular polarizationconversion in an ultra wide band range, consisting of a metal patch, a solid state plasma resonance unit and a vanadium dioxide resonance unit is laminated above the second dielectric substrate. The excited state of the resonance unit composed of the solid state plasma is controlled through an external logic array program, and the phase-change state of a vanadium dioxide area is controlled throughtemperature, so that the linear-circular polarization conversion of the polarization converter in different frequency domain ranges is realized, and the frequency band dynamic control range of circular polarization can stretch over four wave bands such as X wave band, Ku wave band, K wave band and Ka wave band through reasonable parameter optimization.

The invention relates to a preparation method for a GaAs/Ge/GaAs heterostructure SPiN diode string used for a sleeve antenna. The preparation method comprises the steps of (a), selecting a GeOI substrate; (b), etching a top layer Ge layer of the GeOI substrate to form a first trench and a second trench in the top layer Ge layer; (c), depositing a GaAs material in the first trench and the second trench; (d), performing P type ion implantation on the GaAs material in the first trench by adopting an ion implantation process to form a P type active region, and performing N type ion implantation on the GaAs material in the second trench to form an N type active region; and (e), forming lead holes in the surfaces of the P type active region and the N type active region and performing metal sputtering to form the GaAs/Ge/GaAs heterostructure SPiN diode. According to the embodiments, the high-performance Ge-based SPiN diode string, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and the ion implantation process.

The invention belongs to the solid-state plasma and microstrip antenna technology, and more particularly, to a frequency reconfigurable coupled feed loop antenna, comprising: a semiconductor substrate, a dielectic plate, SPiN diode rings, a DC bias line, and a coupling feed source. When a metal contact area is connected to the positive electrode and the negative electrode of the DC bias line respectively, through the exerted DC current and voltage, all SPiN diode rings in the entire SPiN diode string can be put into a forward communication state. When the SPiN diodes are used to excite the solid-state plasma in forward-bias manner, the diodes can be applied for the electromagnetic radiation of the antenna. When the SPiN diodes are closed without bias, they take on a semiconductor dielectric state which can solve the mutually coupling problem between antennas so as to facilitate the design of a reconfigurable antenna. The frequency reconfigurable coupled feed loop antenna of the invention is small in size, reconfigurable, easy to be integrated, and has a simple structure. With the antenna, feeding becomes easy; and frequency can be jumped rapidly.

A method and device for accomplishing transformation of a switching material from a resistive state to a conductive state. The method utilizes a non-electrical source of energy to effect the switching transformation. The switching material may be a chalcogenide switching material, where the non-electrical source of energy initiates switching by liberating lone pair electrons from bound states of chalcogen atoms. The liberated lone pair electrons form a conductive filament having the characteristics of a solid state plasma to permit high current densities to pass through the switching material. The device includes a switching material with electrical contacts and may be interconnected with other elements in a circuit to regulate electrical communication therebetween.

The invention discloses a tunable metamaterial wave absorber based on multiple dielectric materials. The tunable metamaterial wave absorber structurally comprises a bottom-layer metal reflecting boardand a multilayer structure above the metal board, the multilayer structure comprises three layers of dielectric substrates and resonance units above each layer of dielectric substrate, the resonanceunits coated with high-resistance surfaces are arranged above the first layer of dielectric substrate and the third layer of dielectric substrate, and a solid-state plasma resonance unit is arranged above the second layer of dielectric substrate. The solid-state plasma resonance unit has two working states, namely an excitation state and a non-excitation state. The wave absorber has a very good absorption effect on TE polarized waves and TM polarized waves, by coating the high-resistance surfaces on the resonance units above the first layer of dielectric substrate and the third layer of dielectric substrate, the ultra-wideband absorption of the wave absorber can be realized, and the excitation of different resonance units can be realized by controlling the excitation areas of the resonanceunits formed by the solid-state plasmas in a programming manner, so that the tunable absorption of the wave absorber is realized.

The invention relates to a manufacturing method for a solid-state plasma diode equipped with a table-shaped active region and used for preparing a holographic antenna. The manufacturing method comprises the steps of (a), selecting an SOI substrate; (b), etching the SOI substrate to form the table-shaped active region; (c), performing P type Si material and N type Si material deposition on the periphery of the table-shaped active region by adopting an in-situ doping process to form a P region and an N region respectively; (d), depositing a polycrystal Si material on the periphery of the table-shaped active region; and (e), manufacturing leads on the surface of the polycrystal Si material and performing photoetching of PAD to form the solid-state plasma diode. According to the embodiments, the high-performance solid-state plasma diode, equipped with the table-shaped active region and applicable to formation of the holographic antenna, can be prepared and provided by adopting the in-situ doping process.

Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

The invention relates to a solid-state plasma PiN diode and a preparation method therefor. The preparation method comprises the steps of selecting an SOI substrate; etching the SOI substrate to form an isolation groove; filling the isolation groove to form an isolation region, wherein the depth of the isolation groove is greater than or equal to the thickness of top layer silicon of the SOI substrate; etching the SOI substrate to form a P type trench and an N type trench; performing ion implantation in the P type trench and the N type trench to form a P type active region and an N type active region; and forming leads on the SOI substrate to complete the preparation of the solid-state plasma PiN diode. According to the embodiments, the high-performance solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

The invention relates to a preparation method for a Ge-based heterogeneous solid-state plasma diode applied to an annular antenna. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and setting an isolation region on the GeOI substrate; forming a second protection layer on the surface of the GeOI substrate; forming a second isolation region pattern on the second protection layer through a photoetching process; etching the second protection layer and the GeOI substrate in appointed positions of the second isolation region pattern through a dry etching process to form a P type trench and an N type trench; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in top layer Ge of the GeOI substrate by adopting ion implantation; and forming leads on the GeOI substrate to complete the preparation of the Ge-based heterogeneous solid-state plasma diode. According to the embodiments, the high-performance heterogeneous Ge-based solid-state plasma diode, which is applicable to formation of the solid-state plasma antenna, can be prepared through a deep trench isolation technology and an ion implantation process.

The invention provides an SPiN diode-based SOI-based solid-state plasma reconfigurable dipole antenna, which comprises an SOI semiconductor substrate (1), a first antenna arm (2), a second antenna arm (3) and a coaxial feeder (4), wherein the first antenna arm (2), the second antenna arm (3) and the coaxial feeder (4) are fixed on the SOI semiconductor substrate (1); the first antenna arm (2) and the second antenna arm (3) are arranged at two sides of the coaxial feeder (4) respectively and each of the first antenna arm (2) and the second antenna arm (3) comprises a plurality of SPiN diode strings; and the first antenna arm (2) and the second antenna arm (3) achieve length adjustment of the antenna arms according to connection and disconnection of the plurality of SPiN diode strings when the antenna is in a working state. The antenna provided by the invention has the characteristics of being easy to integrate and simple in structure and can be invisible, and the frequency can quickly jump.

The invention relates to a preparation method for an AlAs/Ge/AlAs solid-state plasma PiN diode string used for a sleeve antenna. The preparation method comprises the steps of selecting a GeOI substrate, and setting an isolation region on the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench; depositing an AlAs material in the P type trench and the N type trench, and performing ion implantation on the AlAs material in the P type trench and the N type trench to form a P type active region and an N type active region; and forming leads on the surfaces of the P type active region and the N type active region to complete the preparation of the AlAs/Ge/AlAs solid-state plasma PiN diode string. According to the embodiment, the high-performance Ge-based plasma PiN diode string, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

The invention relates to an intelligent wall structure based on solid-state plasma. The intelligent wall is composed of five layers, wherein a first layer and a third layer are a solid-state plasma layer, a second layer and a fourth layer are a dielectric substrate, and a fifth layer is a copper backing plate. A user can control a switch of the intelligent wall according to environmental requirements, so that the intelligent wall can realize functions of a wave absorbing device and a planar reflection array antenna. When the intelligent wall is used as the wave absorbing device, energy or a single in a specific frequency band can be absorbed, namely an 'unwanted' signal is shielded, and the absorbed energy is converted into electric energy for providing electricity for life of the user orsupplying power to a system of the intelligent wall self; and when the intelligent wall is used as the planar reflection array antenna, multiple frequencies and multiple beams can be dynamically realized, and the intelligent wall can be taken as a signal transmission base station or relay station. The intelligent wall structure provided by the invention has the advantages that functions such as energy harvesting and absorbing, electromagnetic shielding as well as signal transmission and regulation can be realized on the same device, energy conservation and discharge reduction are realized, andspace utilization rate is improved.

The invention relates to a preparation method for a GaAs/Ge/GaAs heterogeneous SPiN diode applied to an annular antenna. The preparation method comprises the steps of selecting a GeOI substrate; etching a top layer Ge layer of the GeOI substrate to form a first trench and a second trench in the top layer Ge layer; depositing a GaAs material in the first trench and the second trench; performing P type ion implantation on the GaAs material in the first trench through an ion implantation process to form a P type active region, and performing N type ion implantation on the GaAs material in the second trench to form an N type active region; and forming lead holes in the surfaces of the P type active region and the N type active region and performing metal sputtering to form the GaAs/Ge/GaAs heterogeneous structured SPiN diode. According to the embodiment, the high-performance GaAs/Ge/GaAs heterogeneous structure-based SPiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

The invention relates to a SPiN diode with a GaAs-Ge-GaAs heterostructure and a preparation method of the SPiN diode. The preparation method comprises the following steps: (1) selecting a GeOI substrate; (b) etching a Ge layer as a top layer of the GeOI substrate to form a first groove and a second groove in the Ge layer as the top layer; (c) depositing GaAs materials in the first groove and the second groove respectively; (d) carrying out P-type ion implantation on the GaAs material in the first groove by utilizing an ion implantation process to form a P-type active region, and carrying out N-type ion implantation on the GaAs material in second first groove by utilizing second ion implantation process to form an N-type active region; and (e) forming lead wire holes in the surfaces of the P-type active region and the N-type active region respectively, and sputtering metal to form the SPiN diode with the GaAs-Ge-GaAs heterostructure. According to the SPiN diode disclosed by the embodiment of the invention, by utilizing a deep trench isolation technology and the ion implantation process, the high-performance Ge-based SPiN diode suitable for forming a solid-state plasma antenna can be prepared and supplied.

The invention relates to a preparation method and a device of a Si-Ge-Si heterogeneous Ge-based solid-state plasma PiN diode. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and setting an isolation region in the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench, wherein the depths of the P type trench and the N type trench are smaller than the thickness of top layer Ge of the GeOI substrate; filling the P type trench and the N type trench, and performing an ion implantation process to form a P type active region and an N type active region in the P type trench and the N type trench; and forming leads on the GeOI substrate to complete the preparation of the heterogeneous Ge-based solid-state plasma PiN diode. According to the embodiments, the high-performance heterogeneous Ge-based solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and the ion implantation process.