Preparation method for AlAs/Ge/AlAs solid-state plasma PiN diode string used for sleeve antenna

A diode string and sleeve antenna technology, applied in semiconductor/solid-state device manufacturing, antennas, semiconductor devices, etc., can solve the problems of low integration, incompatibility, large area, etc., to improve injection efficiency and current, and improve performance. Effect

Inactive Publication Date: 2017-05-31
XIAN CREATION KEJI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the materials used in PiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the PiN diode, and thus Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a...

Method used

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  • Preparation method for AlAs/Ge/AlAs solid-state plasma PiN diode string used for sleeve antenna
  • Preparation method for AlAs/Ge/AlAs solid-state plasma PiN diode string used for sleeve antenna
  • Preparation method for AlAs/Ge/AlAs solid-state plasma PiN diode string used for sleeve antenna

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Effect test

Embodiment 1

[0058] See figure 1 , figure 1 It is a structural schematic diagram of a reconfigurable sleeve antenna according to an embodiment of the present invention; the PiN diode string is used to make a sleeve antenna, such as figure 1 As shown, the sleeve antenna includes: a semiconductor substrate (1), a PiN diode antenna arm (2), a first PiN diode sleeve (3), a second PiN diode sleeve (4), a coaxial feeder (5 ), DC bias lines (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19);

[0059] See figure 2 , figure 2 It is a flowchart of a method for manufacturing an AlAs / Ge / AlAs solid-state plasma PiN diode string for a sleeve antenna according to an embodiment of the present invention, and the method includes the following steps:

[0060] (a) select a GeOI substrate;

[0061] Among them, for step (a), the reason for using GeOI substrate is that solid-state plasma antennas require good microwave characteristics, and solid-state plasma PiN diodes need to have good isolation characteristics...

Embodiment 2

[0102] See Figure 5a-Figure 5r , Figure 5a-Figure 5r It is a schematic diagram of the preparation method of another AlAs / Ge / AlAs solid-state plasma PiN diode used for the sleeve antenna according to the embodiment of the present invention. The AlAs / Ge / AlAs solid-state plasma PiN diode string with a length of 100 microns) is taken as an example to describe in detail, and the specific steps are as follows:

[0103] Step 1, substrate material preparation steps:

[0104] (1a) if Figure 5a As shown, the (100) crystal orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 A GeOI substrate sheet 101, the thickness of the top layer Ge is 50 μm;

[0105] (1b) if Figure 5b As shown, the method of chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is used to deposit a layer of the first SiO with a thickness of 40nm on the GeOI substrate. 2 layer 201;

[0106] (1c) Deposit a layer of first Si with a thickness of 2...

Embodiment 3

[0133] Please refer to Figure 6 , Figure 6 It is a device structure diagram of another AlAs / Ge / AlAs solid-state plasma PiN diode used for a sleeve antenna according to an embodiment of the present invention. The AlAs / Ge / AlAs solid-state plasma PiN diode string adopts the above-mentioned figure 2 The preparation method shown is made, specifically, the AlAs / Ge / AlAs solid-state plasma PiN diode string is prepared and formed on the GeOI substrate 301, and the P region 304, the N region 305 of the PiN diode and the lateral position of the P region 304 The I region between the N region 305 is located in the top Ge layer 302 of the GeOI substrate. Wherein, the PiN diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305 , and the depth of the isolation trench 303 is greater than or equal to the thickness of the top Ge layer 302 .

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Abstract

The invention relates to a preparation method for an AlAs/Ge/AlAs solid-state plasma PiN diode string used for a sleeve antenna. The preparation method comprises the steps of selecting a GeOI substrate, and setting an isolation region on the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench; depositing an AlAs material in the P type trench and the N type trench, and performing ion implantation on the AlAs material in the P type trench and the N type trench to form a P type active region and an N type active region; and forming leads on the surfaces of the P type active region and the N type active region to complete the preparation of the AlAs/Ge/AlAs solid-state plasma PiN diode string. According to the embodiment, the high-performance Ge-based plasma PiN diode string, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a method for preparing an AlAs / Ge / AlAs solid-state plasma PiN diode string used for a sleeve antenna. Background technique [0002] At present, the materials used in PiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the PiN diode, and thus Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, the areas of the P region and the N region are large, the integration degree is low, and the doping concentration is u...

Claims

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Application Information

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IPC IPC(8): H01L21/329H01L21/04H01Q23/00
CPCH01L29/6609H01L21/04H01L21/0415H01Q23/00
Inventor 张亮左瑜
Owner XIAN CREATION KEJI CO LTD
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