Preparation method for GaAs/Ge/GaAs heterogeneous SPiN diode applied to annular antenna

Abstract

The invention relates to a preparation method for a GaAs / Ge / GaAs heterogeneous SPiN diode applied to an annular antenna. The preparation method comprises the steps of selecting a GeOI substrate; etching a top layer Ge layer of the GeOI substrate to form a first trench and a second trench in the top layer Ge layer; depositing a GaAs material in the first trench and the second trench; performing P type ion implantation on the GaAs material in the first trench through an ion implantation process to form a P type active region, and performing N type ion implantation on the GaAs material in the second trench to form an N type active region; and forming lead holes in the surfaces of the P type active region and the N type active region and performing metal sputtering to form the GaAs / Ge / GaAs heterogeneous structured SPiN diode. According to the embodiment, the high-performance GaAs / Ge / GaAs heterogeneous structure-based SPiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a method for preparing a GaAs / Ge / GaAs heterogeneous SPiN diode used for a loop antenna. Background technique [0002] In recent years, wireless communication technology has developed rapidly, and the system has higher and higher requirements for antenna performance. Large-capacity, multi-function, and ultra-wideband are important directions for the development of wireless communication systems at present. However, as the number of antennas used increases, the overall cost and weight of the communication system also increases, and it will cause problems in electromagnetic compatibility. The phased array antenna with relatively mature technology has the disadvantages of complex feed network, the need to add phase shifters, and the resulting high cost and high technical difficulty. Reconfigurable antennas operate under this background. [0003] The rec...

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Problems solved by technology

[0004] At present, there is a type of frequency reconfigurable antenna on the market. The material used for the important component SPIN diode is bulk silicon material. This material has the problem of low carrier mobility in the intrinsic region, which affects the current carrying capacity of the intrinsic region of the SPIN diode. subconcentration, thereby affecting its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, requires high equipment, and is not compatible with existing processes; and Diffusion technology is used, although the junction depth is deep, but at the same time, the area of ​​P region and N region is relatively large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of SPIN diodes, resulting in poor controllability of solid-state plasma concentration and distribution.

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