Preparation method for GaAs/Ge/GaAs heterogeneous SPiN diode applied to annular antenna

A loop antenna and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of large injection dose and energy, affecting concentration, and incompatibility, so as to suppress the impact and improve the breakdown voltage Effect

Active Publication Date: 2017-05-31
QIXING INTELLIGENT TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, there is a type of frequency reconfigurable antenna on the market. The material used for the important component SPIN diode is bulk silicon material. This material has the problem of low carrier mobility in the intrinsic region, which affects the current carrying capacity of the intrinsic region of the SPIN diode. subconcentration, thereby affecting its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation p

Method used

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  • Preparation method for GaAs/Ge/GaAs heterogeneous SPiN diode applied to annular antenna
  • Preparation method for GaAs/Ge/GaAs heterogeneous SPiN diode applied to annular antenna
  • Preparation method for GaAs/Ge/GaAs heterogeneous SPiN diode applied to annular antenna

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Embodiment 1

[0057] An embodiment of the present invention provides a method for manufacturing a GaAs / Ge / GaAs heterogeneous SPiN diode used for a loop antenna, and the GaAs / Ge / GaAs heterogeneous SPiN diode is used for making a reconfigurable loop antenna. Please refer to figure 1 , figure 1 It is a structural schematic diagram of a reconfigurable loop antenna according to an embodiment of the present invention; the loop antenna includes: a semiconductor substrate (1); a dielectric plate (2); a first SPIN diode ring (3), a second SPIN diode ring (4), the first DC bias line (5) and the second DC bias line (6) are all arranged on the semiconductor substrate (1); the coupled feed source (7) is arranged on the On the dielectric plate (2); the first SPIN diode ring (3), the second SPIN diode ring (4), the first DC bias line (5) and the second DC bias line (6) Manufactured on the semiconductor substrate (1) using a semiconductor process.

[0058] Please refer to figure 2 , figure 2 It is a...

Embodiment 2

[0098] See Figure 7a-Figure 7r , Figure 7a-Figure 7r It is a schematic diagram of a preparation method of a GaAs / Ge / GaAs heterostructure SPIN diode according to an embodiment of the present invention. On the basis of the above-mentioned embodiment 1, to prepare a channel length of 22nm (the length of the solid-state plasma region is 100 microns) The GaAs / Ge / GaAs heterostructure SPIN diode is taken as an example to describe in detail, and the specific steps are as follows:

[0099] Step 1, substrate material preparation steps:

[0100] (1a) if Figure 7a As shown, the (100) crystal orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 A GeOI substrate sheet 101, the thickness of the top layer Ge is 50 μm;

[0101] (1b) if Figure 7b As shown, the method of chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is used to deposit a layer of the first SiO with a thickness of 40nm on the GeOI substrate. 2 layer ...

Embodiment 3

[0129] Please refer to Figure 8 , Figure 8 It is a schematic diagram of a device structure of a heterogeneous Ge-based SPIN diode according to an embodiment of the present invention. The SPIN diode of the GaAs / Ge / GaAs heterostructure adopts the above-mentioned figure 2The preparation method shown is made, specifically, the SPIN diode of the GaAs / Ge / GaAs heterostructure is prepared and formed on the GeOI substrate 301, and the P region 304, the N region 305 of the SPIN diode and the lateral position of the P region 304 The i region (intrinsic region) between the N region 305 is located in the top layer Ge302 of the GeOI substrate. Wherein, the SPIN diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top Ge 302.

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Abstract

The invention relates to a preparation method for a GaAs/Ge/GaAs heterogeneous SPiN diode applied to an annular antenna. The preparation method comprises the steps of selecting a GeOI substrate; etching a top layer Ge layer of the GeOI substrate to form a first trench and a second trench in the top layer Ge layer; depositing a GaAs material in the first trench and the second trench; performing P type ion implantation on the GaAs material in the first trench through an ion implantation process to form a P type active region, and performing N type ion implantation on the GaAs material in the second trench to form an N type active region; and forming lead holes in the surfaces of the P type active region and the N type active region and performing metal sputtering to form the GaAs/Ge/GaAs heterogeneous structured SPiN diode. According to the embodiment, the high-performance GaAs/Ge/GaAs heterogeneous structure-based SPiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a method for preparing a GaAs / Ge / GaAs heterogeneous SPiN diode used for a loop antenna. Background technique [0002] In recent years, wireless communication technology has developed rapidly, and the system has higher and higher requirements for antenna performance. Large-capacity, multi-function, and ultra-wideband are important directions for the development of wireless communication systems at present. However, as the number of antennas used increases, the overall cost and weight of the communication system also increases, and it will cause problems in electromagnetic compatibility. The phased array antenna with relatively mature technology has the disadvantages of complex feed network, the need to add phase shifters, and the resulting high cost and high technical difficulty. Reconfigurable antennas operate under this background. [0003] The rec...

Claims

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Application Information

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IPC IPC(8): H01L21/329H01L21/04
CPCH01L21/04H01L21/0415H01L29/6609
Inventor 尹晓雪张亮
Owner QIXING INTELLIGENT TECH CO LTD
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