Preparation method for Ge-based heterogeneous solid-state plasma diode applied to annular antenna

Abstract

The invention relates to a preparation method for a Ge-based heterogeneous solid-state plasma diode applied to an annular antenna. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and setting an isolation region on the GeOI substrate; forming a second protection layer on the surface of the GeOI substrate; forming a second isolation region pattern on the second protection layer through a photoetching process; etching the second protection layer and the GeOI substrate in appointed positions of the second isolation region pattern through a dry etching process to form a P type trench and an N type trench; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in top layer Ge of the GeOI substrate by adopting ion implantation; and forming leads on the GeOI substrate to complete the preparation of the Ge-based heterogeneous solid-state plasma diode. According to the embodiments, the high-performance heterogeneous Ge-based solid-state plasma diode, which is applicable to formation of the solid-state plasma antenna, can be prepared through a deep trench isolation technology and an ion implantation process.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a Ge-based heterogeneous solid-state plasma diode applied to a loop antenna. Background technique [0002] Nowadays, one of the important directions for the development of various communication systems is large capacity, multi-function, and ultra-wideband. By increasing system capacity, increasing system functions, and expanding system bandwidth. By increasing system capacity, increasing system functions, and controlling system bandwidth, on the one hand, the increasing actual demand can be met, and on the other hand, the system cost can also be reduced. As the front end of various wireless communication systems, the performance of the antenna has an important impact on the overall function of the communication system. Therefore, corresponding requirements such as multi-frequency, broadband, and miniaturization have been put forw...

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Problems solved by technology

[0003] At present, there is a type of frequency reconfigurable antenna on the market. The material used in the solid-state plasma diode as an important component is bulk silicon material. This material has the problem of low carrier mobility in the intrinsic region, which affects the intrinsic region of the solid-state plasma diode. Carrier concentration, which in turn affects its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process. This method requires a large implant dose and energy, requires high equipment, and is not compatible with existing processes. ; while the diffusion process is used, although the junction depth is deeper, but at the same time, the area of ​​the P region and the N region is relatively large, the degree of integration is low, and the doping concentration is uneven, which affects the electrical performance of the solid-state plasma diode, resulting in the concentration and distribution of the solid-state plasma. poor controllability

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