Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

SPiN diode-based SOI-based solid-state plasma reconfigurable dipole antenna

A dipole antenna and plasma technology, which is applied in the field of plasma reconfigurable dipole antennas, can solve the problems of high integration processing difficulty, poor stealth performance, and complex feed structure, etc. Plate making, small size effect

Inactive Publication Date: 2017-05-31
XIAN CREATION KEJI CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The various parts of the current frequency reconfigurable microstrip antenna have mutual coupling effects, the frequency hopping becomes slow, the feed source structure is complex, the stealth performance is not good, the profile is high, and the difficulty of integrated processing is high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SPiN diode-based SOI-based solid-state plasma reconfigurable dipole antenna
  • SPiN diode-based SOI-based solid-state plasma reconfigurable dipole antenna

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Apparently, the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0041] figure 1 A structural schematic diagram of an SOI fundamental frequency reconfigurable dipole antenna based on SPiN diodes provided by the present invention. Such as figure 1 As shown, the antenna includes: SOI semiconductor substrate (1);

[0042] The first antenna arm (2), the second antenna arm (3) and the coaxial feeder (4) fixed on the SOI semiconductor substrate (1); preferably, the coaxial fe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an SPiN diode-based SOI-based solid-state plasma reconfigurable dipole antenna, which comprises an SOI semiconductor substrate (1), a first antenna arm (2), a second antenna arm (3) and a coaxial feeder (4), wherein the first antenna arm (2), the second antenna arm (3) and the coaxial feeder (4) are fixed on the SOI semiconductor substrate (1); the first antenna arm (2) and the second antenna arm (3) are arranged at two sides of the coaxial feeder (4) respectively and each of the first antenna arm (2) and the second antenna arm (3) comprises a plurality of SPiN diode strings; and the first antenna arm (2) and the second antenna arm (3) achieve length adjustment of the antenna arms according to connection and disconnection of the plurality of SPiN diode strings when the antenna is in a working state. The antenna provided by the invention has the characteristics of being easy to integrate and simple in structure and can be invisible, and the frequency can quickly jump.

Description

technical field [0001] The invention relates to antenna technology, in particular to an SOI-based solid-state plasma reconfigurable dipole antenna based on SPiN diodes. Background technique [0002] With the further development of science and technology, wireless communication technology is playing an increasingly important role in people's lives. Wireless communication uses radio waves to work, and the reception and transmission of radio waves are completed by antennas, and the performance of antennas directly affects the entire wireless communication system. [0003] With the development of wireless systems in the direction of large-capacity, multi-function, multi-band / ultra-broadband, and the integration of different communication systems, the number of information subsystems carried on the same platform has increased, and the number of antennas has also increased accordingly. However, the increase in the number of antennas It has a relatively large negative impact on th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01Q1/38H01Q1/50
CPCH01Q1/38H01Q1/50
Inventor 王起舒圣杰
Owner XIAN CREATION KEJI CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com