Frequency reconfigurable coupled feed loop antenna
A loop antenna, coupled feed technology, applied to loop antennas, antennas, antenna parts and other directions, can solve the problem of increasing the difficulty of antenna design, and achieve the effects of simple structure, low profile and small volume
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0030] See figure 2 , figure 2 It is a structural schematic diagram of an SOI fundamental frequency reconfigurable coupled feeding loop antenna based on SPiN diodes provided by an embodiment of the present invention. The frequency reconfigurable coupling feed loop antenna includes a semiconductor substrate 1, a dielectric plate 2, a first SPiN diode ring 3, a second SPiN diode ring 4, a first DC bias line 5, and a second DC bias line 6 , are all arranged on the semiconductor substrate 1 ; the coupled feed 7 is arranged on the dielectric board 2 .
[0031] The above-mentioned frequency reconfigurable coupling feeding loop antenna, the first SPiN diode ring 3, the second SPiN diode ring 4, the first DC bias line 5 and the second DC bias line 6 adopt A semiconductor process is fabricated on the semiconductor substrate 1 .
[0032] The above-mentioned frequency reconfigurable coupling feeding loop antenna, the semiconductor substrate 1 and the dielectric plate 2 are Si-based ...
Embodiment 2
[0042] Please also see figure 1 and Figure 5 , figure 1 It is a schematic diagram of the SPiN diode structure provided by the embodiment of the present invention, Figure 5It is a schematic structural diagram of an SPiN diode string provided by an embodiment of the present invention. Each SPiN diode string includes a plurality of SPiN diodes, and these SPiN diodes are connected in series. The SPiN diode is composed of a P+ region 27, an N+ region 26 and an intrinsic region 22, the first metal contact region 23 is located at the P+ region 27, the second metal contact region 24 is located at the N+ region 26, and the SPiN at one end of the SPiN diode string The metal contact region 23 of the diode is connected to the anode of the DC bias, and the metal contact region 24 of the SPiN diode at the other end of the SPiN diode string can make all the SPiN diodes in the entire SPiN diode string in a forward conduction state by applying a DC voltage. When using SPiN diode forward ...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com