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Manufacturing method for AlAs/Ge/AlAs structure-based plasma pin diode used in multilayered holographic antenna

An alas-ge-alas, manufacturing method technology, applied in the direction of antenna, loop antenna, radiating element structure, etc., can solve the problems of large injection dose and energy, low integration, incompatibility, etc., to improve the breakdown voltage, The effect of improving device performance and improving performance

Inactive Publication Date: 2017-06-13
XIAN CREATION KEJI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the materials used in pin diodes used in reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode, which in turn affects Its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is not compatible with existing processes; and the use of diffusion process, although The junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the pin diode, resulting in poor controllability of the solid-state plasma concentration and distribution

Method used

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  • Manufacturing method for AlAs/Ge/AlAs structure-based plasma pin diode used in multilayered holographic antenna
  • Manufacturing method for AlAs/Ge/AlAs structure-based plasma pin diode used in multilayered holographic antenna
  • Manufacturing method for AlAs/Ge/AlAs structure-based plasma pin diode used in multilayered holographic antenna

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Embodiment 1

[0064] An embodiment of the present invention provides a method for manufacturing an AlAs-Ge-AlAs structure-based plasmonic pin diode in a multilayer holographic antenna. The pin diode is used to prepare the holographic antenna. Please refer to figure 1 , figure 1 A structural diagram of a reconfigurable multi-layer holographic antenna provided by an embodiment of the present invention; the holographic antenna includes: a semiconductor substrate (11), an antenna module (13), a first holographic ring (15) and a second A holographic ring (17); the antenna module (13), the first holographic ring (15) and the second holographic ring (17) are all manufactured on the semiconductor substrate (11) using a semiconductor process above; wherein, the antenna module (13), the first holographic ring (15) and the second holographic ring (17) all include pin diode strings connected in series;

[0065] Please refer to figure 2 , figure 2 It is a schematic diagram of the manufacturing meth...

Embodiment 2

[0115] See Figure 8a-Figure 8r , Figure 8a-Figure 8r A schematic diagram of a method for manufacturing an AlAs-Ge-AlAs structure-based plasmonic pin diode in another multilayer holographic antenna provided by the embodiment of the present invention. The AlAs-Ge-AlAs structure-based plasmonic pin diode with a length of 100 microns) is described in detail as an example, and the specific steps are as follows:

[0116] Step 1, substrate material preparation steps:

[0117] (1a) if Figure 8a As shown, the (100) crystal orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 A GeOI substrate sheet 101, the thickness of the top layer Ge is 50 μm;

[0118] (1b) if Figure 8b As shown, the method of chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is used to deposit a layer of the first SiO with a thickness of 40nm on the GeOI substrate. 2 layer 201;

[0119] (1c) Deposit a layer of first Si with a thickness of...

Embodiment 3

[0146] Please refer to Figure 9 , Figure 9 A schematic structural diagram of an AlAs-Ge-AlAs structure-based plasmonic pin diode in another multilayer holographic antenna provided by an embodiment of the present invention. The AlAs-Ge-AlAs structure-based plasmonic pin diode adopts the above-mentioned as figure 2 The manufacturing method shown is made, specifically, the base plasma pin diode of the AlAs-Ge-AlAs structure is prepared and formed on the GeOI substrate 301, and the P region 304, the N region 305 of the pin diode and the lateral position of the P region 304 The I region between the N region 305 is located in the top Ge layer 302 of the GeOI substrate. Wherein, the pin diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305 , and the depth of the isolation trench 303 is greater than or equal to the thickness of the top Ge layer 302 .

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Abstract

The invention relates to a manufacturing method for an AlAs / Ge / AlAs structure-based plasma pin diode used in a multilayered holographic antenna. The manufacturing method comprises the steps of selecting a GeOI substrate, and setting an isolation region on the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench; depositing an AlAs material in the P type trench and the N type trench, and performing ion implantation on the AlAs material in the P type trench and the N type trench to form a P type active region and an N type active region; and forming leads on the surfaces of the P type active region and the N type active region to complete the manufacturing of the AlAs / Ge / AlAs structure-based plasma pin diode. According to the embodiment, the high-performance Ge-based plasma pin diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

Description

technical field [0001] The invention relates to the field of manufacturing electronic components, in particular to a method for manufacturing an AlAs-Ge-AlAs structure-based plasma pin diode in a multilayer holographic antenna. Background technique [0002] Because of its holographic structure, the holographic antenna can well meet the actual requirements of users on specific occasions, and has a good application prospect. Reconfigurable antennas, especially frequency reconfigurable antennas, can work in multiple frequencies, which greatly expands the application range and has received extensive attention. It is a very important and meaningful question which material and technology to use to produce the frequency reconfigurable holographic antenna. [0003] At present, the materials used in pin diodes used in reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/66H01L21/04H01Q23/00H01Q7/00H01Q1/38
CPCH01L21/04H01L29/6609H01Q1/38H01Q7/00H01Q23/00
Inventor 尹晓雪张亮
Owner XIAN CREATION KEJI CO LTD
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