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Preparation method for Ge-based heterogeneous SPiN diode applied to reconfigurable annular antenna

A technology of loop antennas and diodes, which is applied to devices, antennas, and antenna components that enable antennas to work in different bands at the same time. It can solve problems such as increasing the difficulty of antenna design, and achieve the effects of suppressing the impact and improving the breakdown voltage.

Inactive Publication Date: 2017-05-31
XIAN CREATION KEJI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the design of the reconfigurable antenna needs to consider the mutual coupling between the various parts of the antenna, it increases the difficulty of antenna design

Method used

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  • Preparation method for Ge-based heterogeneous SPiN diode applied to reconfigurable annular antenna
  • Preparation method for Ge-based heterogeneous SPiN diode applied to reconfigurable annular antenna
  • Preparation method for Ge-based heterogeneous SPiN diode applied to reconfigurable annular antenna

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Embodiment 1

[0057] An embodiment of the present invention provides a method for preparing a Ge-based heterogeneous SPiN diode applied to a reconfigurable loop antenna, and the Ge-based heterogeneous SPiN diode is used to manufacture a reconfigurable loop antenna. Please refer to figure 1 , figure 1 It is a structural schematic diagram of a frequency reconfigurable coupled feeding loop antenna based on a Ge-based heterogeneous SPiN diode provided by an embodiment of the present invention. The reconfigurable loop antenna includes: a semiconductor substrate (1); a dielectric plate (2); a first SPIN diode ring (3), a second SPIN diode ring (4), and a first DC bias line (5) and the second DC bias line (6), both arranged on the semiconductor substrate (1); the coupled feed (7), arranged on the dielectric plate (2); the first SPIN diode ring (3), the second SPIN diode ring (4), the first DC bias line (5) and the second DC bias line (6) are fabricated on the semiconductor substrate ( 1) on.

...

Embodiment 2

[0097] See Figure 7a-Figure 7r , Figure 7a-Figure 7r It is a schematic diagram of a method for preparing a heterogeneous Ge-based plasma SPIN diode according to an embodiment of the present invention. On the basis of the above-mentioned embodiment 1, a heterogeneous Ge-based diode whose channel length is 22nm (the length of the solid-state plasma region is 100 microns) is prepared. The solid-state plasma SPIN diode is taken as an example to describe in detail, and the specific steps are as follows:

[0098] Step 1, substrate material preparation steps:

[0099] (1a) if Figure 7a As shown, the (100) crystal orientation is selected, the doping type is p-type, and the doping concentration is 1014cm -3 A GeOI substrate sheet 101, the thickness of the top layer Ge is 50 μm;

[0100] (1b) if Figure 7b As shown, a first layer of SiO with a thickness of 40nm is deposited on a GeOI substrate by chemical vapor deposition (Chemical vapor deposition, CVD for short). 2 layer 201;...

Embodiment 3

[0127] Please refer to Figure 8 , Figure 8 It is a schematic diagram of a device structure of a Ge-based heterogeneous SPiN diode according to an embodiment of the present invention. The Ge-based heterogeneous SPiN diode adopts the above-mentioned as figure 2 The preparation method shown is made, specifically, the Ge-based heterogeneous SPiN diode is prepared and formed on the GeOI substrate 301, and the P region 304, the N region 305 of the SPIN diode and the laterally located P region 304 and the N region 305 The I regions in between are located in the top layer Ge302 of the GeOI substrate. Wherein, the SPIN diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 304 and the N region 305, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top layer Ge302.

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Abstract

The invention relates to a preparation method for a Ge-based heterogeneous SPiN diode applied to a reconfigurable annular antenna. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and forming a first protection layer on the surface; forming a first isolation region pattern on the first protection layer by a photoetching process; etching the first protection layer and the GeOI substrate in appointed positions of the first isolation region pattern through a dry etching process to form an isolation groove, wherein the depth is greater than or equal to the thickness of top layer Ge of the GeOI substrate; filling the isolation groove to form an isolation region of the Ge-based heterogeneous SPiN diode; etching the GeOI substrate to form a P type trench and an N type trench, wherein the depth is smaller than the thickness of top layer Ge of the GeOI substrate; filling the P type trench and the N type trench, and forming a P type active region and an N type active region in the P type trench and the N type trench by adopting ion implantation; and forming leads on the GeOI substrate to complete the preparation of the Ge-based heterogeneous SPiN diode. According to the embodiments, the Ge-based heterogeneous SPiN diode, which is applicable to formation of the solid-state antenna, can be prepared through a deep trench isolation technology and an ion implantation process.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a preparation method of a Ge-based heterogeneous SPiN diode applied to a reconfigurable loop antenna. Background technique [0002] With the rapid development of modern radar and communication systems, in order to achieve communication, navigation, guidance, warning, weapons and other purposes, the number of antennas required by aircraft, ships, satellites, etc. is increasing. The antennas that have been researched so far are basically made of metal, so the shape of this antenna cannot be changed after it is manufactured, and it has a large radar scattering cross section, which greatly reduces the stealth performance of the antenna. Metal antennas are heavy in weight, low in integration, and large in size, which also limit their applications in other areas. [0003] The concept of reconfigurable antennas has been paid attention to and developed in orde...

Claims

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Application Information

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IPC IPC(8): H01Q1/22H01Q1/36H01Q5/321H01L21/329H01L29/868
CPCH01Q1/2283H01L29/6609H01L29/868H01Q1/36H01Q5/321
Inventor 尹晓雪张亮
Owner XIAN CREATION KEJI CO LTD
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