SiGe-based solid-state plasma PiN diode and preparation method thereof

Abstract

The invention relates to a SiGe-based solid-state plasma PiN diode and a preparation method thereof. The preparation method comprises the following steps: selecting a SiGeOI substrate of a certain crystal orientation, and setting an isolation area on the SiGeOI substrate; etching the substrate to form a P-type channel and an N-type channel, wherein the depth of the P-type channel and N-type channel is less than the thickness of the top-layer SiGe of the substrate; forming a first P-type active area and a first N-type active area in the P-type channel and N-type channel by ion implantation; filling the P-type channel and N-type channel, and forming a second P-type active area and a second N-type active area in the top-layer SiGe of the substrate by ion implantation; and forming a lead on the substrate to finish the preparation of a SiGe-based solid-state plasma PiN diode. In the embodiment of the invention, the high-performance SiGe-based solid-state plasma PiN diode suitable for forming a solid-state plasma antenna is prepared and provided by using the deep trench isolation technology and ion implantation technology.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a SiGe-based solid-state plasma PiN diode and a preparation method thereof. Background technique [0002] At present, the materials used in PiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the PiN diode, and thus Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, the areas of the P region and the N region are large, the integration degree is low, and the doping concentration is uneven, whic...

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Problems solved by technology

[0002] At present, the materials used in PiN diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the PiN diode, and thus Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the PiN diode, resulting in poor controllability of the solid-state plasma concentration and distribution.

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