Preparation method of heterogeneous Ge-based PIN diode string in reconfigurable annular antenna

Abstract

The invention relates to a preparation method of a heterogeneous Ge-based PIN diode string in a reconfigurable annular antenna. The preparation method includes: selecting a GeOI substrate of a certain crystal direction, and arranging an isolating area in the GeOI substrate; etching the GeOI substrate to form a P-type groove and an N-type groove, wherein depth of the P-type groove and the N-type groove is smaller than thickness of Ge on the top layer of the GeOI substrate; oxidizing the P-type groove and the N-type groove to form oxidized layers on the inner walls of the P-type groove and the N-type groove; utilizing a wet etching process to etch the oxidized layers on the inner walls of the P-type groove and the N-type groove to flatten the inner walls of the P-type groove and the N-type groove; filling the P-type groove and the N-type groove; forming a lead on the GeOI substrate to complete preparation of the Ge-based PIN diode. By utilizing deep groove isolating technology and ion implantation technology, the high-performance heterogeneous Ge-based PIN diode string suitable for forming solid-state plasma antennas can be prepared and provided.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a heterogeneous Ge-based PIN diode string in a reconfigurable loop antenna. Background technique [0002] Reconfigurable antennas with adjustable performance have the characteristics of miniaturization and multi-function, and it has received more and more attention in today's wireless communication systems. By dynamically changing the physical structure or size of the antenna, the current distribution on its surface can be changed, so as to obtain the reconfigurability of the antenna's operating frequency, radiation direction and polarization and other characteristic parameters, thereby realizing the operating frequency and radiation of multiple antennas. The reconfigurability of characteristic parameters such as direction and polarization can realize the functions of multiple antennas, which is equivalent to multiple antennas sha...

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Problems solved by technology

[0003] At present, there is a type of frequency reconfigurable antenna on the market. The material used for the important component PIN diode is bulk silicon material. This material has the problem of low carrier mobility in the intrinsic region, which affects the current carrying capacity of the intrinsic region of the PIN diode. sub-concentration, thereby affecting its solid-state plasma concentration; and the P region and N region of the structure are mostly formed by implantation process, which requires a large implant dose and energy, requires high equipment, and is not compatible with existing processes; and Diffusion technology is used, although the junction depth is deep, but at the same time, the area of ​​P region and N region is relatively large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of PIN diodes, resulting in poor controllability of solid-state plasma concentration and distribution.

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