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Method for preparing SiGe-based plasma pin diode for reconstructing holographic antennas

A holographic antenna and plasma technology, which is applied to devices, antennas, and antenna components that make the antennas work in different bands at the same time, can solve problems such as incompatibility, uneven doping concentration, and influence on solid-state plasma concentration, and improve the Enhanced performance, controllability

Inactive Publication Date: 2017-04-26
XIAN CREATION KEJI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the materials used in solid-state plasma pin diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode. , which in turn affects its solid-state plasma concentration; and most of the P and N regions of this structure are formed by implantation, which requires a large implant dose and energy, requires high equipment, and is incompatible with existing processes; Although the junction depth is deep, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the pin diode, resulting in poor controllability of the solid-state plasma concentration and distribution.

Method used

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  • Method for preparing SiGe-based plasma pin diode for reconstructing holographic antennas
  • Method for preparing SiGe-based plasma pin diode for reconstructing holographic antennas
  • Method for preparing SiGe-based plasma pin diode for reconstructing holographic antennas

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Embodiment 1

[0054] This embodiment provides a method for preparing a SiGe-based plasmonic pin diode used for a reconfigurable holographic antenna, and the SiGe-based plasmonic pin diode is used for making a reconfigurable holographic antenna. See figure 1 , figure 1 It is a structural schematic diagram of a reconfigurable holographic antenna according to an embodiment of the present invention. The reconfigurable holographic antenna includes: a SiGeOI semiconductor substrate (1); a first antenna fabricated on the SiGeOI semiconductor substrate (1) Arm (2), second antenna arm (3), coaxial feeder (4) and holographic ring (14); wherein, the first antenna arm (2) and the second antenna arm (3) include distributed SiGe-based plasma pin diode strings of equal length on both sides of the coaxial feeder (4), the holographic ring (14) includes a plurality of SiGe-based plasma pin diode strings (w7).

[0055] The antenna arm of the reconfigurable holographic antenna provided by the embodiment of t...

Embodiment 2

[0100] See Figure 5a-Figure 5s , Figure 5a-Figure 5s It is a schematic diagram of the preparation method of another SiGe-based plasmonic pin diode according to the embodiment of the present invention. On the basis of the first embodiment above, to prepare a SiGe-based solid-state plasmonic pin with a channel length of 22 nm (the length of the solid-state plasma region is 100 microns) Taking a diode as an example to describe in detail, the specific steps are as follows:

[0101] Step 1, substrate material preparation steps:

[0102] (1a) if Figure 5a As shown, the SiGeOI substrate 101 with (100) orientation is selected, the doping type is p-type, and the doping concentration is 10 14 cm -3 , the thickness of the top layer SiGe is 50 μm;

[0103] (1b) if Figure 5b As shown, the chemical vapor deposition (Chemical vapor deposition, CVD) method is used to deposit a layer of first SiO with a thickness of 40 nm on SiGe. 2 layer 201;

[0104] (1c) Deposit a layer of first...

Embodiment 3

[0133] Please refer to Figure 6 , Figure 6 It is a schematic diagram of the device structure of another SiGe-based plasmonic pin diode according to an embodiment of the present invention. The plasmonic pin diode employs the above as figure 2 The preparation method shown is made, specifically, the plasma pin diode is prepared and formed on the SiGeOI substrate 301, and the P region 305, the N region 306 of the pin diode and the laterally located between the P region 305 and the N region 306 The I regions are located in the top layer SiGe302 of the substrate. Wherein, the pin diode can be isolated by STI deep trenches, that is, an isolation trench 303 is provided outside the P region 305 and the N region 306, and the depth of the isolation trench 303 is greater than or equal to the thickness of the top SiGe layer. In addition, the P region 305 and the N region 306 may respectively include a thin-layer P-type active region 307 and a thin-layer N-type active region 304 along...

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Abstract

The invention relates to a method for preparing SiGe-based plasma pin diode for reconstructing holographic antennas. The method comprises: selecting a SiGeOI substrate of a crystal orientation; arranging an isolation region on the SiGeOI substrate; etching the substrate to form a P-type groove and an N-type groove wherein the depths of the P-type groove and the N-type groove are smaller than the thickness at the top SiGe layer of the substrate; forming a first P-type active region and a first N-type active region in the P-type groove and the N-type groove by ion implantation; filling the P-type groove and the N-type groove; forming a second P-type active region and a second N-type active region in the top SiGe layer of the substrate by ion implantation; and forming lead wires on the substrate to complete the preparation of the SiGe-based plasma pin diode. The embodiments of the present invention are capable of preparing and providing a high performance SiGe-based plasma pin diode suitable for forming a solid-state plasma antenna using a deep trench isolation technique and an ion implantation process.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a SiGe-based plasma pin diode used for a reconfigurable holographic antenna. Background technique [0002] The holographic antenna consists of a source antenna and a holographic structure. Combined with actual needs, select an appropriate antenna as the source antenna, change the radiation of the feed source by loading a holographic structure to obtain the required radiation characteristics of the target antenna, and calculate the antenna structure through the given interference pattern of electromagnetic wave radiation. Compared with the traditional reflector antenna, the holographic structure has a flexible construction form, which is convenient for integrated design with the application environment, and has a wide range of applications. [0003] The wireless communication system requires that the antenna can change its electri...

Claims

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Application Information

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IPC IPC(8): H01Q1/22H01Q1/36H01Q5/321H01L21/329H01L29/868
CPCH01Q1/2283H01L29/6609H01L29/868H01Q1/36H01Q5/321
Inventor 尹晓雪张亮
Owner XIAN CREATION KEJI CO LTD
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