Ge-based solid-state plasma PiN diode and preparation method therefor

Abstract

The invention relates to a Ge-based solid-state plasma PiN diode and a preparation method therefor. The preparation method comprises the steps of selecting a GeOI substrate of a certain crystal orientation, and setting an isolation region in the GeOI substrate; etching the GeOI substrate to form a P type trench and an N type trench, wherein the depths of the P type trench and the N type trench are smaller than the thickness of top layer Ge of the GeOI substrate; performing ion implantation in the P type trench and the N type trench to form a first P type active region and a first N type active region; filling the P type trench and the N type trench, and adopting ion implantation to form a second P type active region and a second N type active region in the top layer Ge of the GeOI substrate; and forming leads on the GeOI substrate to complete the preparation of the Ge-based solid-state plasma PiN diode. According to the embodiments, the high-performance Ge-based solid-state plasma PiN diode, which is applicable to formation of a solid-state plasma antenna, can be prepared and provided through a deep trench isolation technology and an ion implantation process.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a Ge-based solid-state plasma PiN diode and a preparation method thereof. Background technique [0002] At present, the materials used in pin diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode. Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects t...

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Problems solved by technology

[0002] At present, the materials used in pin diodes used in plasma reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode. Affect its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process, Although the junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the pin diode, resulting in poor controllability of the solid-state plasma concentration and distribution.

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