Preparation method of GaAs-based horizontal plasma pin diode for multi-layer holographic antenna

Abstract

The invention relates to a preparation method of a GaAs-based horizontal plasma pin diode for a multi-layer holographic antenna. The multi-layer holographic antenna comprises a semiconductor substrate GeOI, an antenna module, a first holographic round ring and a second holographic round ring, wherein the antenna module, the first holographic round ring and the second holographic round ring all comprises GaAs-based plasma pin diodes which are sequentially connected in series. The preparation method of the GaAs-based plasma pin diode comprises the steps of selecting a GeOI substrate in a certain crystal direction, depositing a GaAs layer on a surface of the substrate and forming an isolation region by metal-organic chemical vapor deposition (MOCVD); etching the substrate to form a P-type groove and an N-type groove and form a first P-type active region and a first N-type active region; and filling the P-type groove and N-type groove, forming a lead on the substrate to complete the preparation of the GaAs-based plasma pin diode. According to the embodiment, the high-performance GaAs-based plasma pin diode can be prepared and provided for forming the multi-layer holographic antenna by a deep groove isolation technology and an ion injection process.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a GaAs-based lateral plasma pin diode used for a multilayer holographic antenna. Background technique [0002] The holographic antenna consists of a source antenna and a holographic structure. Combined with actual needs, select an appropriate antenna as the source antenna, change the radiation of the feed source by loading a holographic structure to obtain the required radiation characteristics of the target antenna, and calculate the antenna structure through the given interference pattern of electromagnetic wave radiation. Compared with the traditional reflector antenna, the holographic structure has a flexible construction form, which is convenient for integrated design with the application environment, and has a wide range of applications. [0003] At present, the materials used in pin diodes used in plasma reconfigurable hol...

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Problems solved by technology

[0003] At present, the materials used in pin diodes used in plasma reconfigurable holographic antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode. In turn, it affects its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is incompatible with existing processes; and the diffusion process , although the junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the pin diode, resulting in poor controllability of the solid-state plasma concentration and distribution.

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