Preparation method of heterogeneous GaAs-Ge-GaAs pin diode for multi-layer holographic antenna

Abstract

The invention discloses a preparation method of a heterogeneous GaAs-Ge-GaAs pin diode for a multi-layer holographic antenna. The preparation method comprises the steps of (a) selecting a GeOI substrate; (b) etching a top Ge layer of the GeOI substrate to form a first groove and a second groove in the top Ge layer; (c) depositing a GaAs material in the first groove and the second groove; (d) performing P-type ion implantation on the GaAs material in the first groove by utilizing an ion implantation technology to form a P-type active region and performing N-type ion implantation on the GaAs material in the second groove to form an N-type active region; and (e) forming lead holes in the surfaces of the P-type active region and the N-type active region and sputtering metal to form the heterogeneous GaAs-Ge-GaAs pin diode. The method can prepare and provide the high-performance Ge-base pin diode applicable to forming a solid plasma antenna by utilizing a deep groove isolation technique and the ion implantation technology.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for preparing a pin diode of a GaAs-Ge-GaAs heterostructure used for a multilayer holographic antenna. Background technique [0002] Because of its holographic structure, the holographic antenna can well meet the actual requirements of users on specific occasions, and has a good application prospect. Reconfigurable antennas, especially frequency reconfigurable antennas, can work in multiple frequencies, which greatly expands the application range and has received extensive attention. It is a very important and meaningful question which material and technology to use to produce the frequency reconfigurable holographic antenna. [0003] At present, the materials used in pin diodes used in reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which...

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Problems solved by technology

[0003] At present, the materials used in pin diodes used in reconfigurable antennas at home and abroad are all bulk silicon materials. This material has the problem of low carrier mobility in the intrinsic region, which affects the carrier concentration in the intrinsic region of the pin diode, which in turn affects Its solid-state plasma concentration; and the P region and N region of this structure are mostly formed by implantation process, which requires a large implant dose and energy, high requirements on equipment, and is not compatible with existing processes; and the use of diffusion process, although The junction depth is deep, but at the same time, the area of ​​the P region and the N region is large, the integration degree is low, and the doping concentration is uneven, which affects the electrical performance of the pin diode, resulting in poor controllability of the solid-state plasma concentration and distribution

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