Plasma processing apparatus

A plasma and processing device technology, which is applied in the field of plasma processing devices, can solve the problems of undisclosed large metal windows, etc., and achieve the effect of reducing the weight of the mechanism

Active Publication Date: 2016-08-03
TOKYO ELECTRON LTD
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, none of these Patent Documents 2 and 3 discloses a method of providing a large metal window while maintaining an insulated state from the processing container.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing apparatus
  • Plasma processing apparatus
  • Plasma processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0057] Below, refer to Figure 1 ~ Figure 3 , and the configuration of the plasma processing apparatus 1 according to the embodiment of the present invention will be described.

[0058] The plasma processing apparatus 1 can be used for various plasma processes including those for forming a metal film, an ITO film, Formation of oxide films and the like, etching for etching these films, ashing of resist films, and the like. Here, examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. In addition, the plasma processing apparatus 1 is not limited to being used for the above-mentioned various plasma processings on the substrate G for FPDs, and may be used for the above-mentioned various plasma processings on the substrate G for solar cell panels.

[0059] like figure 1 As shown in the longitudinal sectional side view of , the plasma processing apparatus 1 has a square tube-shaped container body...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a plasma processing apparatus which is provided with a metal window using a lightweight mechanism and maintains the mechanical strength. In the plasma processing apparatus (1) which performs plasma processing on a processed substrate (G) in a processing space (100) where vacuum exhaust is carried out, a metal process container (10) has a mounting table of the processed substrate (G). The conductive metal window (3) spacing an insulation part (31) is arranged at the position of an opening which is sealed and formed on the upper surface. The metal window (3) is configured to be hung and supported by a top plate part (61) above a plasma antenna (5) for generating the plasma. And the top plate part (61) is hung and supported by a top plate supporting mechanism (7) of a skeleton structure with a crossarm part (71, 711) and a foot column part (72).

Description

technical field [0001] The present invention relates to a plasma processing apparatus for performing plasma processing on a substrate to be processed using plasma-formed processing gas. Background technique [0002] In the manufacturing process of a flat panel display (FPD) such as a liquid crystal display (LCD), there is a process of supplying a plasma-formed processing gas to a glass substrate as a substrate to be processed, and performing plasma processing such as etching processing and film formation processing. . Various plasma processing apparatuses, such as a plasma etching apparatus and a plasma CVD apparatus, are used for these plasma processing. In recent years, Inductively Coupled Plasma (ICP), which has a great advantage of being able to obtain high-density plasma at a high vacuum, has attracted attention as a method for converting a process gas into plasma. [0003] On the other hand, the size of the glass substrate is gradually increasing. For example, a fla...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32119H01J2237/3321H01J2237/334
Inventor 出口新悟山田洋平
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap