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Piezoelectric device, method of actuating the same, piezoelectric apparatus, and liquid discharge apparatus

A technology of piezoelectric devices and piezoelectric bodies, applied in piezoelectric devices/electrostrictive devices, material selection for piezoelectric devices or electrostrictive devices, manufacturing/assembly of piezoelectric/electrostrictive devices, etc. , can solve problems such as inability to maintain, small strain displacement, high work efficiency, etc.

Active Publication Date: 2008-09-24
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] As for Conventional Technology 2, as in the case of the aforementioned Conventional Technology 1 utilizing only the piezoelectric effect of a ferroelectric substance, if the thickness of the piezoelectric device is reduced, it will be in a range that includes a higher applied electric field If the applied electric field is used to use a piezoelectric device with a reduced thickness, only a small amount of strain displacement can be obtained in this range, and high operating efficiency will not be maintained

Method used

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  • Piezoelectric device, method of actuating the same, piezoelectric apparatus, and liquid discharge apparatus
  • Piezoelectric device, method of actuating the same, piezoelectric apparatus, and liquid discharge apparatus
  • Piezoelectric device, method of actuating the same, piezoelectric apparatus, and liquid discharge apparatus

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0156] An epitaxially grown film can be formed using a material having good lattice matching characteristics with respect to a piezoelectric thin film as a material for the bottom plate and the bottom electrode. Examples of suitable combinations of base plate / bottom electrode materials include SrTiO 3 / SrRuO 3 and MgO / Pt, an epitaxially grown film can be formed by such an appropriate combination.

[0157] The fine particle-oriented ceramic sintered body can be formed by a hot press technique, a tablet technique, or a lamination technique in which a plurality of sheets obtained by a tablet technique are laminated.

[0158] With the embodiment of the piezoelectric device 1, the first ferroelectric crystal which is a ferroelectric crystal before undergoing a phase transition is an orientation crystal. Therefore, the piezoelectric effect of the first ferroelectric substance crystal uniformly and reliably covers the entire area of ​​the piezoelectric body 13 for the range...

example 2

[0230] TiO with a thickness of 20nm 2 Adhesion layer formed on SiO 2 / Si substrate surface. Furthermore, by using the sputtering technique, a Pt bottom electrode with a thickness of 0.2 μm was formed on TiO 2 on the surface of the adhesion layer, the TiO 2 Adhesion layer formed on SiO 2 / Si substrate surface. Thereafter, PbZr with a thickness of 2.4 μm was made by using the sputtering technique 0.46 Ti 0.42 Nb 0.12 o 3 The film is formed as a piezoelectric body on a Pt bottom electrode. Moreover, a Pt top electrode with a thickness of 0.2 μm was formed on PbZr 0.46 Ti 0.42 Nb 0.12 o 3 on the film. In this way, a piezoelectric device according to the present invention is obtained.

[0231] The obtained piezoelectric thin film was subjected to electric field application XRD measurement in the same manner as in Example 1. From this measurement, it was confirmed that the piezoelectric thin film was composed of rhombohedral crystals (first ferroelectr...

example 3

[0243] In addition to PbZr with 5.0 μm by using sputtering technique 0.44 Ti 0.44 Nb 0.12 o 3 The film was formed as a piezoelectric body on the bottom electrode and it was annealed at 650°C in an oxygen atmosphere, and the top electrode was subsequently formed on PbZr 0.44 Ti 0.44 Nb 0.12 o 3 A piezoelectric device according to the present invention was obtained in the same manner as in Example 2 except on the thin film. In this way a piezoelectric device according to the invention is obtained.

[0244] The obtained piezoelectric thin film was subjected to electric field application XRD measurement in the same manner as in Example 1. From this measurement, it was confirmed that the piezoelectric thin film is composed of polycrystals including rhombohedral crystals (first ferroelectric substance crystals) having crystal orientation characteristics in the direction when no electric field is applied, and Mixture of tetragonal crystals with a crystal orientat...

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Abstract

A piezoelectric device (1) comprises a piezoelectric body (13) and electrodes (12, 14) for applying an electric field in a predetermined direction across the piezoelectric body (13). The piezoelectric body (13) contains an inorganic compound polycrystal, which contains first ferroelectric substance crystals having orientational characteristics at the time free from electric field application and has characteristics such that, with application of at least a predetermined electric field E1, at least part of the first crystals undergoes phase transition to second ferroelectric substance crystals of a crystal system different from the crystal system of the first crystals. The piezoelectric device (1) is actuated under conditions such that a minimum applied electric field Emin and a maximum applied electric field Emax satisfy Emin<E1<Emax.

Description

technical field [0001] The present invention relates to a piezoelectric device and a method of driving the piezoelectric device. In particular, the present invention relates to a crystal structure of a piezoelectric body constituting the piezoelectric device and conditions for driving the piezoelectric device. The present invention also relates to a piezoelectric device in which a piezoelectric device and a control device for controlling driving of the piezoelectric device are provided, and to a liquid discharge device using the piezoelectric device. Background technique [0002] Heretofore, a piezoelectric device provided with a piezoelectric body having a piezoelectric body having Piezoelectric properties such that it expands and contracts according to the increase and decrease of the electric field applied to the piezoelectric body. [0003] Hitherto, composite oxides having a perovskite structure such as lead zirconate titanate (PZT) have been known as piezoelectric ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/09H01L41/18H01L41/187H01L41/22H02N2/00
CPCH01L41/18H01L41/187H01L41/1876H01L41/0973B41J2/14233B41J2202/03H10N30/2047H10N30/8554H02N2/00H10N30/20H10N30/853
Inventor 坂下幸雄藤井隆满菱沼庆一
Owner FUJIFILM CORP
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