Structure using graphite alkene as buffer layer epitaxy GaN (gallium nitride) and preparation method of structure

A technology of graphene layer and buffer layer, which is applied in the field of optoelectronics, can solve the problems of inability to alleviate the stress and thermal expansion coefficient mismatch between the substrate and the epitaxial material, reduce the quality of sapphire and gallium nitride, and reduce the quality of the epitaxial crystal, etc., so as to reduce the leakage current , Mitigation of thermal expansion coefficient mismatch, low stress effect
CN102769081AInactive Publication Date: 2012-11-07SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
Publication Date
2012-11-07
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a structure using graphite alkene as buffer layer epitaxy GaN (gallium nitride) and a preparation method of the structure. The method comprises the following steps of: adopting a graphite alkene layer as a buffer layer between the substrate and a gallium nitride epitaxy layer; and inserting a nitride thin layer between the graphite alkene layer and a GaN layer so as to obtain a gallium nitride epitaxy layer with low stress and high quality. The defective rate of LED (light emitting diode) devices is reduced, the quality of the LED devices is increased, and the life cycle is prolonged. The problem of lattice mismatch and thermal expansion coefficient mismatch between the substrate and the gallium nitride are solved effectively.
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Description

Technical field

[0001] The invention relates to a structure of epitaxial GaN with graphene as a buffer layer and a preparation method thereof, and belongs to the technical field of optoelectronics. Background technique

[0002] Gallium nitride material has received more and more attention as a new type of semiconductor material. As a representative material of third-generation semiconductors, gallium nitride has excellent electrical and optical properties. It has the advantages of relatively wide band gap and direct band gap, high temperature and high pressure resistance, and is suitable for use in harsh environments. The main applications of gallium nitride materials are light emitting diodes (LEDs) and high electron mobility transistors. Gallium nitride-based light-emitting diodes can achieve wavelength changes from ultraviolet to red light, covering the entire visible light band, especially the commercialization of gallium nitride blue light-emitting diodes, driving the devel...

Claims

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