Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof

A solar cell and heterojunction technology, applied in the field of solar cells, can solve the problems of weak absorption of visible light, low conversion efficiency of silicon solar cells, low light absorption efficiency, etc., achieve good transparency and conductivity, improve photoelectric conversion efficiency, Uniform effect over a large area

Inactive Publication Date: 2014-02-12
SUZHOU UNIV OF SCI & TECH
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  • Abstract
  • Description
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Problems solved by technology

[0005] Si is an indirect bandgap semiconductor, and the light absorption efficiency is very low. In addition, the absorption peak wavelength of silicon is 930 nm, and

Method used

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  • Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof
  • Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof
  • Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof

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Embodiment 1

[0029] See attached figure 1 , which is the graphene / MoS provided in this example 2 Schematic diagram of the structure of a / Si heterojunction solar cell, which includes graphene electrodes 1, p-MoS 2 Thin film layer 2, n-Si layer 3 and Al electrode 4; figure 1 In the graphene electrode as the anode of the solar cell, p-MoS 2 The pn junction formed by the n-Si layer is the core unit of photoelectric conversion of the solar cell, and the Al electrode is the cathode of the solar cell.

[0030] Growth of ultrathin MoS on n-type silicon wafers (111) by chemical vapor deposition 2 Thin film (several atomic layers), and doping with Al atoms during its growth process to make its conductivity type P-type, and contact with n-type silicon substrate to form a p-n junction. in p-MoS 2 On the surface of the film, a graphene film with a thickness of 10 to 20 atomic layers is grown by chemical vapor deposition. This layer of graphene film and MoS 2 / Si pn junction together constitute g...

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Abstract

The invention relates to a grapheme/MoS2/Si heterojunction thin-film solar cell and a manufacturing method thereof. A chemical vapor deposition method that gases carry liquid phase MoS2 molecules is adopted, the flow and the response speed can be well controlled, and an MoS2 thin film which is ultra-thin, even in large area, smooth in surface and small in roughness is obtained. Interface special shapes of a p-MoS2/n-Si heterojunction are effectively reduced, leak currents are reduced, and the photoelectric conversion efficiency of the solar cell is improved. The grapheme film which is even in large area and good in transparency and electric conductivity and obtained with the chemical vapor deposition method is used as a transparent electric conduction electrode. The MoS2-Si heterojunction has strong collecting function on photoproduction electrons and holes, and the photovoltaic effect and the conversion efficiency of the solar cell are improved. The solar cell has the open-circuit voltage of 0.98V, the short-circuit currents of 4.6mA and the light energy conversion efficiency of 4.5% under 100mW white light illumination.

Description

technical field [0001] The invention relates to a solar cell, in particular to a graphene / MoS 2 / Si heterojunction solar cell and its preparation method. Background technique [0002] MoS 2 , also known as molybdenum, a black solid substance with metallic luster at room temperature, has excellent chemical stability, thermal stability (melting point 1185°C) and lubricity, and is usually used as a surface coating or lubricant for machinery and cutting tools . Structurally, molybdenum is a hexagonal close-packed graphite layer structure, and the layers are combined by weakly interacting van der Waals forces. Similar to graphite, which is easily exfoliated into monoatomic layer graphene, molybdenite can also be easily exfoliated into monolayer MoS by micromechanical exfoliation. 2 Membranes [S. Bertolazzi, J. Brivio, A. Kis, Stretching and Breaking of Ultrathin MoS 2 , ACS Nano, V. 5(12): 9703-9709, 2011.]. The monolayer MoS2 is a regular hexagonal planar structure with S-...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/074C23C16/44C23C16/30
CPCY02E10/50C23C16/305C23C16/44H01L31/074H01L31/18Y02P70/50
Inventor 马锡英
Owner SUZHOU UNIV OF SCI & TECH
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