Product
Feature
Quick Research
Generate reliable direction feasibility study reports for your R&D in just a few steps.
Technical Q&A
Discover and master advanced knowledge NOW. Basics, ideas, possibilities, all at once.
Find Solutions
As an expert in R&D theories, this can generate solutions to your technical problems instantly.
Evaluate Feasibility
Analyze your overall solution with one click, know your potential R&D risks in advance.
Monitor Landscape
Get weekly tech updates, stay abreast of the latest tech innovations and key insights.
Inorganic-organic semiconductor combined element having transverse photovoltaic effect and preparation method thereof
A technology of organic semiconductors and inorganic semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of low cost, large adjustable area, etc., and achieve materials simplification, variety, and cost reduction Effect
Inactive Publication Date: 2010-08-25
FUDAN UNIV
View PDF1 Cites 12 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The object of the present invention is to provide an inorganic-organic semiconductor composite device with a large adjustable area and relatively low cost and a lateral photovoltaic effect and its preparation method
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
Embodiment 2
Embodiment 3
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Sensitivity | aaaaa | aaaaa |
Login to View More
Abstract
The invention belongs to the technical field of material preparation and sensors, in particular to an inorganic-organic semiconductor combined element having a transverse photovoltaic effect and a preparation method thereof. The element is prepared by depositing a magnetic metal material and an organic semiconductor material on an inorganic semiconductor substrate by means of coevaporation. The nano particles of the magnetic metal material are embedded in an organic semiconductor base and a composite nanoparticle membrane layer formed is expressed by a formula: (A)*(B)1-x, wherein x ranges from 0.3 to 0.9; A represents the magnetic metal material and B represents the organic semiconductor material; and the element structure is expressed as (A)*(B)1-x / Si or (A)*(B)1-x / SiO2 / Si. The element can be widely used elements such as position sensors.
Description
An inorganic organic semiconductor composite device with lateral photovoltaic effect and its preparation method technical field The invention belongs to the field of material preparation and sensor technology, and specifically relates to a newly discovered inorganic-organic semiconductor composite device with a lateral photovoltaic effect and a preparation method thereof, as well as applications in the fields of position sensors and the like. Background technique The lateral photovoltaic effect refers to the photovoltaic effect along the surface generated by the p-n junction, semiconductor heterojunction or metal semiconductor junction under point lighting, which can be applied to position sensitive detectors, rotary shaft encoders, x-y axis positioners and Optical positioning sensors, etc. At present, the most widely used ones are still based on traditional p-n junctions or metal-semiconductor junctions (MS) or metal-oxide-semiconductor junctions (MOS), mainly using inorg...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCY02E10/549
Inventor 倪刚张岩刘文明
Owner FUDAN UNIV
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com