Preparation method of titanium dioxide/titanium nitride composite film with adjustable band gaps
A titanium dioxide and composite thin film technology is applied in the field of band gap adjustment of titanium dioxide photocatalysts, which can solve the problems of narrow adjustment range, limited utilization of sunlight, low controllability, etc., and achieves improved utilization, good application prospects, and controllability. Good results
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Embodiment 1
[0028] (1) ultrasonically clean the silicon substrate one by one with acetone, alcohol, and deionized water and dry it;
[0029] (2) fixing the pretreated substrate on the sample stage of magnetron sputtering;
[0030] (3) Using titanium nitride as the target material, the chamber of the magnetron sputtering coating machine is pumped to 2×10 -4 Pa high vacuum;
[0031] (4) feed argon and nitrogen, keep the working pressure 1.0Pa, wherein the volume fraction of nitrogen is 10%;
[0032] (5) Adjust the angle between the target and the sample stage so that they are facing each other, the distance between the target and the sample stage is kept at 10cm, and the sample stage is rotated at a rate of 0.2rpm. The temperature of the sample stage is kept at 333K. An 800nm thick titanium nitride film is grown on the substrate;
[0033] (6) The prepared titanium nitride film was annealed at 623K in air atmosphere for 60min, then removed from the annealing furnace and lowered to room ...
Embodiment 2
[0035] (1) ultrasonically clean the silicon substrate one by one with acetone, alcohol, and deionized water and dry it;
[0036] (2) fixing the pretreated substrate on the sample stage of magnetron sputtering;
[0037] (3) Using titanium nitride as the target material, the chamber of the magnetron sputtering coating machine is pumped to 2×10 -4 Pa high vacuum;
[0038] (4) feed argon and nitrogen, keep the working pressure 1.0Pa, wherein the volume fraction of nitrogen is 10%;
[0039] (5) Adjust the angle between the target and the sample stage so that they are facing each other, the distance between the target and the sample stage is kept at 10cm, and the sample stage is rotated at a rate of 0.2rpm. The temperature of the sample stage is kept at 333K. An 800nm thick titanium nitride film is grown on the substrate;
[0040] (6) The prepared titanium nitride film was annealed at 623K for 45 minutes in an air atmosphere to obtain a composite film of titanium nitride and ti...
Embodiment 3
[0042] (1) ultrasonically clean the silicon substrate one by one with acetone, alcohol, and deionized water and dry it;
[0043] (2) fixing the pretreated substrate on the sample stage of magnetron sputtering;
[0044] (3) Using titanium nitride as the target material, the chamber of the magnetron sputtering coating machine is pumped to 2×10 -4 Pa high vacuum;
[0045] (4) feed argon and nitrogen, keep the working pressure 1.0Pa, wherein the volume fraction of nitrogen is 10%;
[0046] (5) Adjust the angle between the target and the sample stage so that they are facing each other, the distance between the target and the sample stage is kept at 10cm, and the sample stage is rotated at a rate of 0.2rpm. The temperature of the sample stage is kept at 333K. An 800nm thick titanium nitride film is grown on the substrate;
[0047] (6) The prepared titanium nitride film was annealed at a temperature of 623K for 15 minutes under air condition to obtain a composite film of titaniu...
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