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PEDOT-ZnO ultraviolet light detector of flexible thin film type, and preparation method therefor

A flexible film and ultraviolet light technology, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc., can solve problems such as inability to bend or fold, inconvenient installation and use, and achieve low cost, simple process, and excellent photosensitive properties Effect

Inactive Publication Date: 2016-01-13
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, most of the ultraviolet light detectors made of semiconductor materials are rigid solids, which cannot be bent or folded, and are inconvenient to install and use in some special parts of equipment that require relative movement.

Method used

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  • PEDOT-ZnO ultraviolet light detector of flexible thin film type, and preparation method therefor
  • PEDOT-ZnO ultraviolet light detector of flexible thin film type, and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Step 1: Using the sol-gel method to prepare a doped ZnO material with zinc acetate, sodium nitrate and ammonium acetate as raw materials, the steps are as follows: configure 0.01mol / L zinc acetate, 0.001mol / L sodium nitrate and 0.01mol / L Ammonium acetate mixed solution, heated to 90 degrees Celsius, then added PVA to a concentration of 0.5g / L, stirred for 2 hours, then allowed to stand at room temperature and stirred for 1 hour to form a ZnO colloid. Put the colloid in a glass and put it in an oven to dry.

[0029] Step 2: put the dried ZnO into an atmosphere furnace, and perform heat treatment at 800°C in an atmosphere of oxygen and argon with a pressure ratio of 1:1. Then put ZnO into a ball mill, and use a ball mill with a vibration frequency of 1200 cycles / min to grind the heat-treated ZnO for 72 hours to obtain ZnO:(Na,N) powder with an average particle diameter of about 500 nm.

[0030] Step 3: Mix ZnO:(Na,N) powder with PEDOT:PSS (manufactured by Wuhan Sinuo Fuh...

Embodiment 2

[0034] The preparation method and test are the same as in Example 1, but the concentration of the prepared solution in step 1 is changed to a mixed solution of 0.01 mol / L zinc acetate, 0.01 mol / L sodium nitrate, and 0.01 mol / L ammonium acetate. Table 1 shows the values ​​of the responsivity of the ultraviolet light detector prepared in this real-time example. It can be seen from Table 1 that the response performance of the ultraviolet light detector in this embodiment is worse than that in Example 1.

Embodiment 3

[0036]The preparation method and test were the same as in Example 1, but the concentration of the solution prepared in step 1 was changed to a mixed solution of 0.01 mol / L zinc acetate, 0.001 mol / L sodium nitrate, and 0.1 mol / L ammonium acetate. Table 1 shows the values ​​of the responsivity of the ultraviolet light detector prepared in this real-time example. It can be seen from Table 1 that the response performance of the ultraviolet light detector in this embodiment is worse than that in Example 1.

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Abstract

The invention relates to a PEDOT-ZnO ultraviolet light detector of a flexible thin film type, and a preparation method therefor. The detector comprises a flexible photosensitive film and an electrode on the film. Specifically, the flexible photosensitive film is a PEDOT-ZnO thin film which is disposed on a transparent flexible plastic film through spin coating, wherein the ratio (by mass ratio) of PEDOT to ZnO is 7: 1. The electrode is an Au / Ti interdigital electrode. There is a barrier between pure PEDOT and ZnO materials, and the barrier greatly affects the photoconductive property of a PEDOT and ZnO composite system. The materials in the method are doped based on energy-band engineering design, thereby eliminating a raw interference barrier of the two materials, and enabling the detector to have excellent photoconductive property.

Description

technical field [0001] The invention relates to the field of semiconductor materials and their preparation, in particular to a flexible film type PEDOT-ZnO ultraviolet light detector and a preparation method thereof. Background technique [0002] Ultraviolet light detectors have high application value in many applications. For military use, it can be used for aerospace detection, fighter tail flame tracking, missile tail flame tracking, etc.; for civilian use, it can be used for high-voltage corona detection, ultraviolet fingerprint detection, flame detection, etc. Semiconductor ultraviolet detectors are stable in performance and easy to use, and have been widely used in production and life. However, most of the ultraviolet light detectors made of semiconductor materials are rigid solids, which cannot be bent or folded, and are inconvenient to install and use in special parts of equipment that require relative movement. The development of a flexible film-type UV detector t...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K85/1135H10K30/00Y02E10/549
Inventor 段理樊继斌于晓晨田野何凤妮程晓姣
Owner CHANGAN UNIV
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