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Flexible ZnO/NiO/ZnO multifunctional triode and preparation method thereof

A multi-functional, triode technology, applied in the field of triodes, can solve problems such as weak competitive advantages, stop triodes, etc.

Active Publication Date: 2020-02-25
HANGZHOU DIANZI UNIV
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Problems solved by technology

However, there are very few reports on ZnO-based triodes at present, and they stop at the basic performance research of triodes, and pay no attention to other functions. This makes ZnO-based triodes show a weak competitive advantage in the future smart electronics market, so there is an urgent need for development A thin film transistor based on ZnO heterojunction, and actively develop the application of its various functions

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  • Flexible ZnO/NiO/ZnO multifunctional triode and preparation method thereof
  • Flexible ZnO/NiO/ZnO multifunctional triode and preparation method thereof
  • Flexible ZnO/NiO/ZnO multifunctional triode and preparation method thereof

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Embodiment Construction

[0026] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0027] see figure 1 , the present invention provides a design scheme of a flexible multifunctional thin film triode, comprising: a flexible substrate 1, the flexible substrate is an insulating rectangular PET sheet, which is respectively ultrasonicated in acetone, alcohol, and deionized water for 10 minutes, and then used N 2 Blow dry standby; Conductive layer 2, described conductive layer is ITO coating, highly transparent, adopts magnetron sputtering method to prepare directly on flexible substrate; Collector 3, described collector is n-type ZnO thin film, with A flexible substrate with a conductive layer is used as the base, which is prepared by magnetron sputtering. Before the preparation, a part of the conductive layer needs to be covered with PI tape; the base 4, the base is a p-type NiO film, and the preparation process is dir...

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Abstract

The invention discloses a flexible ZnO / NiO / ZnO multifunctional triode which structurally comprises an emitting electrode, a base electrode, a collecting electrode and a flexible conductive substrate in sequence from top to bottom. According to the flexible conductive substrate, a conductive layer is arranged on the flexible substrate. The emitting electrode is made of ZnO, the base electrode is made of NiO, the collecting electrode is made of ZnO, one side of the emitting electrode, one side of the base electrode and one side of the collecting electrode are aligned, and electrodes are arrangedon the emitting electrode and the conductive layer of the flexible substrate. According to the invention, various functional applications of the transistor in photoelectric detection, force and electricity sensing, nano power generation and the like are realized through the coupling effect of a piezoelectric effect and semiconductor energy band engineering.

Description

technical field [0001] The invention relates to a triode, in particular to a flexible ZnO / NiO / ZnO multifunctional triode and a preparation method thereof. Background technique [0002] Transistors are small in size, light in weight, low in power consumption, long in life, and high in reliability. They have been widely used in fields such as radio, television, communications, radar, computers, and household appliances. They can play a role in amplification, oscillation, and switching. Especially in UHF applications, such as radio frequency circuits in wireless systems. [0003] The research on triodes has always attracted much attention, and its research work mainly focuses on the first-generation and second-generation semiconductor materials. Silicon (Si), as a typical representative of the first generation of semiconductor materials, is widely used in the preparation of electronic components due to its superior electronic properties and thermal stability. Currently, the tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/22H01L29/24H01L29/732H01L21/34H01L31/0296H01L31/032H01L31/11H01L41/08H01L41/113H01L41/18H10N30/00H10N30/30H10N30/85
CPCH01L29/7322H01L29/66969H01L29/24H01L29/22H01L31/1105H01L31/032H01L31/0296H10N30/30H10N30/85H10N30/302H10N30/101
Inventor 徐旻轩李馨金成超何志伟张骐
Owner HANGZHOU DIANZI UNIV
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