InP-based semiconductor laser structure with low contact resistance and manufacturing method thereof

A low contact resistance, semiconductor technology, used in semiconductor lasers, lasers, laser parts and other directions, can solve the problem of not involving metal-semiconductor interfaces, and achieve the effects of low contact resistance and improved heat dissipation.

Pending Publication Date: 2020-02-11
江苏索尔思通信科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Patent CN 104218447 B aims at the preparation of metal layers and discloses a method for realizing the transition of metal layers between single metal layers, which can effectively reduce

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  • InP-based semiconductor laser structure with low contact resistance and manufacturing method thereof
  • InP-based semiconductor laser structure with low contact resistance and manufacturing method thereof
  • InP-based semiconductor laser structure with low contact resistance and manufacturing method thereof

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Embodiment 1

[0028] An InP-based semiconductor laser structure with low contact resistance, comprising an InP substrate 21, a semiconductor laser structure 32 epitaxially grown on the InP substrate and a metal electrode layer 31 on the semiconductor laser structure, the semiconductor laser structure comprising sequential growth from bottom to top n-InP buffer layer 22, n-type confinement layer 23, n-side waveguide layer 24, quantum well active layer 25, p-side waveguide layer 26, p-type confinement layer 27, p-type corrosion barrier layer 28, p-type cladding layer 29 and p-type electrode contact layer 30. The material of the p-type electrode contact layer 30 is p-In 0.57 Ga 0.43 As, a compressive strain of about 2600ppm is introduced into the electrode contact layer, the band gap is reduced from 0.75eV in the conventional structure to about 0.71eV, the material thickness range is 150nm, and the doping concentration level is 0.3×10 20 cm -1 .

Embodiment 2

[0029] Embodiment 2, a kind of InP base semiconductor laser structure with low contact resistance, comprises InP substrate 41, the semiconductor laser structure 52 of epitaxial growth on the InP substrate and the metal electrode layer 51 on the semiconductor laser structure, the semiconductor laser structure comprises The n-InP buffer layer 42, n-type confinement layer 43, n-side waveguide layer 44, quantum well active layer 45, p-side waveguide layer 46, p-type confinement layer 47, p-type corrosion barrier layer 48, p-type cladding layer 49 and p-type electrode contact layer 50 . The material of the p-type electrode contact layer 50 is p-In 0.53+x Ga 0.47-xThe ternary or binary compound material of As, in which x gradually and continuously linearly changes from 0 to 0.47, the thickness of the material is 250 nm, and the linear relationship between x and thickness changes is x≈0.02×t (where t is the thickness, in nm), The doping concentration level is 0.3×10 20 cm -1 abou...

Embodiment 3

[0031] An InP-based semiconductor laser structure with low contact resistance, comprising an InP substrate 41, a semiconductor laser structure 52 epitaxially grown on the InP substrate and a metal electrode layer 51 on the semiconductor laser structure, the semiconductor laser structure comprising sequential growth from bottom to top n-InP buffer layer 42, n-type confinement layer 43, n-side waveguide layer 44, quantum well active layer 45, p-side waveguide layer 46, p-type confinement layer 47, p-type corrosion barrier layer 48, p-type cladding layer 49 and the p-type electrode contact layer 50, the p-type electrode contact layer, the material is a ternary or binary compound material of p-In0.53+xGa0.47-xAs, wherein x gradually and continuously changes from 0 to 0.47, and the thickness of the material is At 250 nm, the parabolic relationship of x varying with thickness is x≈1E-05×t 2 -0.0024t (where t is the thickness in nm), the doping concentration level is 0.3×10 20 cm -...

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Abstract

The invention relates to an InP-based semiconductor laser structure with a low contact resistance. The InP-based semiconductor laser structure comprises a semiconductor laser structure epitaxially grown on an InP substrate and a metal electrode layer manufactured on the semiconductor laser structure. The semiconductor laser structure mainly comprises an n-InP buffer layer, an n-type limiting layer, an n-type waveguide layer, a quantum well active layer, a p-type waveguide layer, a p-type limiting layer, a p-type corrosion barrier layer, a p-type cladding layer and a novel p-type electrode contact layer which are successively manufactured from bottom to top. The invention provides a novel p-type electrode contact layer structure and a manufacturing method thereof. Energy-band engineering isused, a compressive strain and a band gap narrowing effect are introduced into a p-type electrode contact layer, and a transition contact layer technology is introduced to improve ohmic contact performance in order to solve a problem that epitaxial quality of a thin film of the contact layer is deteriorated under a large compressive stress level so that a contact resistance of a semiconductor laser chip is reduced, a heat dissipation capability and reliability are improved, and a service life is prolonged.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, and in particular relates to an InP-based semiconductor laser structure with low contact resistance and a preparation method thereof. Background technique [0002] In order to meet the actual use requirements of the device, semiconductor lasers for optical communication generally adopt two types of laser structures: ridge waveguide (RidgeWaveguide, RW) and buried heterojunction (Buried Heterojunction, BH). The width of the p-type region of these two structures is very narrow (1-2 μm) to achieve the confinement of the electric field and optical field of the semiconductor laser, figure 1 A schematic diagram of a conventional ridge waveguide structure. [0003] After systematic calculation and analysis, most of the series resistance of the device falls in the p-type region (accounting for about 90%). Usually the non-doped or low-doped regions near the active region contribute little t...

Claims

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Application Information

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IPC IPC(8): H01S5/042
CPCH01S5/0421
Inventor 章曙东鲍辉章鹏闫小冰
Owner 江苏索尔思通信科技有限公司
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