Method for forming crystalline silicon solar cell front electrode

A technology of solar cells and front electrodes, which is applied in the production of printing, circuits, and electrical components of special varieties of printed matter, can solve problems such as increased surface carrier load, and achieve the effects of reducing compounding, saving battery costs, and avoiding direct contact.

Inactive Publication Date: 2012-10-17
上海中智光纤通讯有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, although the direct contact between silver and silicon wafer can reduce the contact resistance loss, it leads to...

Method used

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  • Method for forming crystalline silicon solar cell front electrode
  • Method for forming crystalline silicon solar cell front electrode
  • Method for forming crystalline silicon solar cell front electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1) Electrode paste

[0024] Silver paste for printing fine grids for the first time: use ordinary solar cell silver paste with a silver content of 85% and a glass frit softening point of 460°C.

[0025] The second printing of silver paste for busbars: use ordinary solar cell silver paste with a silver content of 80%, glass frit softening point of 500°C, and lower conductivity than silver paste for fine grids.

[0026] 2) Fabrication method of front electrode

[0027] After texturing, diffusion and surface passivation treatment, anti-reflection film formation on the front, aluminum quilt and back silver electrode are printed on the back of monocrystalline silicon with specifications of 125mmx125mm and textured on both sides, and dried at 200 degrees. First, print a fine-grid silver electrode on the front of the silicon wafer, use the solar cell silver paste described in 1, and dry it in a tunnel furnace at a temperature of 200°C. Then print the main grid in the front e...

Embodiment 2

[0029] 1) Electrode paste

[0030] Silver paste for printing fine grids for the first time: the silver content is 80%, and the softening point of the glass frit is 460°C.

[0031] The second printing of silver paste for busbars: the silver content is 75%, the softening point of glass frit is 500°C, and the conductivity is lower than that of silver paste for fine grids.

[0032] 2) Fabrication method of front electrode

[0033] After texturing, diffusion and surface passivation treatment, anti-reflection film formation on the front, aluminum quilt and back silver electrode are printed on the back of monocrystalline silicon with specifications of 125mmx125mm and textured on both sides, and dried at 200 degrees. First, print a fine-grid silver electrode on the front of the silicon wafer, use the solar cell silver paste described in 1, and dry it in a tunnel furnace at a temperature of 200°C. Then print the main grid in the front electrode and the fine grid for the second time, ...

Embodiment 3

[0035] 1) Electrode paste

[0036] Silver paste for printing fine grids for the first time: the silver content is 80%, and the softening point of the glass frit is 460°C.

[0037] Silver paste for the second printing of busbars: the silver content is 70%, the softening point of the glass frit is 500°C, and the conductivity is lower than that of the silver paste for fine grids.

[0038] 2) Fabrication method of front electrode

[0039] After texturing, diffusion and surface passivation treatment, anti-reflection film formation on the front, aluminum quilt and back silver electrode are printed on the back of monocrystalline silicon with specifications of 125mmx125mm and textured on both sides, and dried at 200 degrees. First, print a fine-grid silver electrode on the front of the silicon wafer, use the solar cell silver paste described in 1, and dry it in a tunnel furnace at a temperature of 200°C. Then print the main grid in the front electrode and the fine grid for the secon...

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Abstract

The invention relates to a method for forming a crystalline silicon solar cell front electrode, which comprises the steps that after the double-sided texturing monocrystalline silicon backside printing aluminum subjected to texturing, diffusing, surface passivating and front antireflection coating forming is dried by field and back silver electrodes, a thin grid silver electrode is firstly printed at the front side of a silicon wafer and dried; then, only the main grid electrode is printed, or the main grid electrode is printed and a thin grid electrode is printed for the second time, and are dried; and the dried main grid electrode and the thin grid electrode are fed into a tunnel furnace for sintering, so the crystalline silicon solar cell front electrode is obtained. Because the secondary printing technology is adopted, the method has the advantages of the secondary printing technology, and is suitable for industrial production; and under the condition of ensuring the enough good ohmic contact of the thin grid electrode, the main grid electrode is prevented from being directly contacted with the silicon wafer, the surface passivation area is increased, the interfacial compound of the photon-generated carrier is reduced, and the photoelectric conversion efficiency of a solar cell is improved.

Description

technical field [0001] The invention belongs to the field of printing front electrodes of solar cells, in particular to a method for forming the front electrodes of crystalline silicon solar cells. Background technique [0002] With the rapid development of solar technology, improving the photoelectric conversion efficiency of solar cells and reducing production costs have become the main goals of research and development in the solar cell industry. An effective way to improve battery efficiency is to increase the amount of incident light as much as possible and reduce the area of ​​the front of the battery that is blocked by the electrodes. This requires the width of the electrodes to be thinner and thinner, but the ensuing problem is that the resistance loss of the electrodes increases at the same time. Large, which greatly offsets the advantages brought by the reduction of shading loss. Therefore, while reducing the width of the electrode, it is necessary to ensure a cert...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0224B41M3/00B41M1/26
CPCY02P70/50
Inventor 张宏徐晓斌彭铮王巍李媛媛彭德香
Owner 上海中智光纤通讯有限公司
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