Flexible pyroelectric thin film device

Abstract

The invention discloses a flexible pyroelectric thin film device. The device comprises a polyimide flexible substrate, a copper electrode thin film, a nickel transition layer and pyroelectric thin films, the particles of the pyroelectric thin film are arranged in a gradient mode on particle diameter, the pyroelectric thin films comprise a P type pyroelectric thin film and an N type pyroelectric thin film, the P type pyroelectric thin film and the N type pyroelectric thin film are connected through the copper electrode thin film, the p-n thermoelectric couple pairs arranged in an array mode and serially connected are formed on the flexible substrate for forming the flexible pyroelectric thin film device having in-plane structure. The sputtering parameter and the heat treatment process are adjusted and controlled for optimizing microcosmic interfacial structure of the thin film material, the inorganic thin film can be reliably deposited on the flexible substrate and the reliable flexible pyroelectric thin film device with high performance is prepared.

Description

technical field [0001] The invention relates to a thermoelectric device, in particular to a flexible thermoelectric thin film device prepared by magnetron sputtering technology. Background technique [0002] Thermoelectric materials are functional materials that can convert heat and electricity into each other, and can be used in the manufacture of thermoelectric generators, refrigerators and sensors. Commonly used thermoelectric materials include inorganic thermoelectric materials and organic thermoelectric materials. The performance of thermoelectric materials is related to three parameters: Seebeck coefficient α, electrical conductivity σ and thermal conductivity κ. The thermoelectric figure of merit ZT (ZT=α 2 σT / κ) is a dimensionless description, in which the electrical part PF(α 2 σ) is called the "power factor"; the higher the power factor of a thermoelectric material, the better its thermoelectric performance. In practical applications, thermoelectric materials are...

AI Technical Summary

Problems solved by technology

At present, the thermoelectric materials used in flexible thermoelectric devices that have come out are generally organic thermoelectric materials, but the Seebeck coefficient α and electrical conductivity σ of organic thermoelectric materials are quite low, and the thermoelectric performance is far lower than that of inorganic thermoelectric materials such as bismuth telluride. used in practice; and inorganic thermoelectric materials are difficult to be used in flexible thermoelectric devices due to their own brittleness

On the other hand, the preparation methods of organic thermoelectric materials are mainly printing methods or chemical methods, etc., and the binding force between the prepared thermoelectric materials and the substrate is very weak.

[0004] In fact, inorganic thermoelectric materials can be flexible and efficient through thin film, but the difficulty lies in how to achieve high bonding force between inorganic thermoelectric thin films and flexible substrates to ensure high reliability of flexible thermoelectric thin film devices

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