Thin film transistor and manufacturing method thereof and array substrate and display device

Abstract

The invention discloses a thin film transistor, a manufacturing method of the thin film transistor, an array substrate and a display device which are used for improving performance of the thin film transistor (TFT) and quality of an image. The thin film transistor comprises a substrate, a grid electrode formed on the substrate, a source electrode, a drain electrode, a semiconductor layer, a grid electrode insulation layer located between the grid electrode and the semiconductor layer or among the grid electrode, the source electrode and the drain electrode, an etching barrier layer located among the semiconductor layer, the source electrode and the drain electrode and provided with a source electrode contact hole and a drain electrode contact hole, a source electrode buffer layer located between the source electrode and the semiconductor layer and a drain electrode buffer layer located between the drain electrode and the semiconductor layer. The source electrode and the drain electrode are metallic copper electrodes. The buffer layers are made of copper alloy.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, an array substrate and a display device. Background technique [0002] In the field of flat panel display technology, thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display, TFT-LCD) and organic electroluminescence display (Organic Light Emitting Display, OLED), because of its light, thin, low power consumption, high brightness , and the advantages of high image quality occupy an important position in the field of flat panel display. In particular, large-size, high-resolution, and high-quality flat panel display devices, such as liquid crystal televisions, have occupied a dominant position in the current flat panel display market. [0003] Currently, image signal delay is one of the key factors restricting large-size, high-resolution and high-quality flat panel display devices. Reducing t...

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Problems solved by technology

[0004]The adhesion of Cu metal is relatively poor. The Cu process used in the TFT process generally requires the use of a buffer layer (Bufferlayer) to improve the adhesion of Cu. The common Bufferlayer can be molybdenum Mo , titanium Ti, Mo alloy, Ti alloy, etc., but the formed TFT has poor adhesion due to Cu, and the performance of TFT is poor, resulting in poor image quality

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