40 results about "Copper silicide" patented technology

The adhesion of a diffusion barrier or capping layer to Cu and/or Cu alloy interconnect members is significantly enhanced by treating the exposed surface of the Cu and/or Cu alloy interconnect members with a silane or dichlorosilane plasma to form a layer of copper silicide thereon prior to depositing the capping layer. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in a dielectric interlayer, chemical mechanical polishing, treating the exposed surface of the Cu or Cu alloy interconnect member in a silane or dichlorosilane plasma to form the copper silicide layer and depositing a capping layer of silicon nitride thereon.

A method for forming a semiconductor structure includes supplying a structure having an exposed last metalization layer, cleaning the last metalization layer, forming a silicide in a top portion of the last metalization layer and forming a terminal over the silicide.

A method for capping copper or copper alloy interconnects. A dielectric layer is formed overlaying a semiconductor substrate. An opening is formed in the dielectric layer and subsequently embedded copper or copper alloy form an interconnect structure. A silicon layer is formed on the copper or copper alloy by sputtering or chemical vapor deposition. A copper silicide layer is formed by reacting the silicon layer with the underlying copper or copper alloy as a capping layer.

A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).

A silane passivation process, carried out in-situ together with the formation of a subsequent dielectric film, converts the exposed Cu surfaces of a Cu interconnect structure, to copper silicide. The copper silicide suppresses Cu diffusion and electromigration and serves as a barrier material in regions where contact to further conductive material is made. An entire copper surface of a copper interconnect structure may be silicided or a local portion of the surface silicided after an opening is formed in an overlying dielectric to expose a portion of the copper surface.

A method is provided for forming a capping layer comprising Cu, N, and also Si and/or Ge onto a copper conductive structure, said method comprising the sequential steps of: forming, at a temperature range between 200° C. up to 400° C., at least one capping layer onto said copper conductive structure by exposing said structure to a GeH₄ and/or a SiH₄ comprising ambient, performing a NH₃ plasma treatment thereby forming an at least partly nitrided capping layer, forming a dielectric barrier layer onto said at least partly nitrided capping layer, wherein prior to said step of forming said at least one capping layer a pre-annealing step of said copper conductive structure is performed at a temperature range between 250° C. up to 450° C.

A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.

In sophisticated metallization systems of semiconductor devices, a sensitive core metal, such as copper, may be efficiently confined by a conductive barrier material comprising a copper/silicon compound, such as a copper silicide, which may provide superior electromigration behavior and higher electrical conductivity compared to conventionally used tantalum/tantalum nitride barrier systems.

In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.

Provided is a negative-electrode active substance having enhanced electron conductivity. In the present invention, a copper-containing silicon material is obtained by reacting copper-containing calcium silicide represented by the formula CaCuxSiy with oxygen and heat-treating the reaction product in a non-oxidizing atmosphere. The copper-containing silicon material includes Si and copper in an amorphous phase, and fine copper silicides are uniformly deposited in the amorphous phase, and the copper-containing silicon material therefore has enhanced electron conductivity. A secondary cell which uses the negative-electrode active substance in a negative electrode thereof therefore has enhanced lead characteristics and increased charge/discharge capacity.

By forming a copper/silicon/nitrogen alloy in a surface portion of a copper-containing region on the basis of a precursor layer, highly controllable and reliable process conditions may be established. The precursor layer may be formed on the basis of a liquid precursor solution, which may exhibit a substantially self-aligned and self-limiting deposition behavior.

The invention provides a manufacturing method of a high-temperature-resistant brake block, and relates to the technical fields of production of brake blocks. The high-temperature-resistant brake block comprises a friction material and a steel backing, wherein the friction material comprises the following components and raw materials in parts by weight: phenolic resins, butadiene rubber, high-temperature-resistant carbon fiber resins, maleic anhydride, steel fibers, silicon carbide whiskers, aramid, molybdenum fibers, graphite, barites, silicon disulfide, copper silicide, dolomite, talcum powder, mica powder, copper powder and barium sulfate. The manufacturing method comprises the following steps of preparing the materials, mixing the materials by an aqueous method, performing prepressing forming and performing heat treatment once, so as to produce friction material blanks; performing warming treatment, putting the friction material blanks in boiling oil for scalding for 3-5 seconds, and then fishing out the scalded blanks for drying; performing shot blasting treatment on the steel backing, and spreading glue to the steel backing after the shot blasting treatment is performed; hot-forming the blanks and the steel backing; and then, sequentially performing reheat treatment, grinding, fluting, chamfering, grit blasting treatment and sticking of noisedamping sheets. The brake blocks manufactured by the method disclosed by the invention are high in intensity, oxidation-resistant, good in heat stability, high in friction coefficient, and good in production environmentally-friendly performance.

The invention discloses a high-thermal-conductivity ceramic crucible. The high-thermal-conductivity ceramic crucible is prepared from the following raw materials in parts by weight: 60 to 75 parts ofa mixture of calcined spodumene powder and petalite powder, 15 to 25 parts of quartz, 25 to 35 parts of bauxite, 12 to 17 parts of a mixture of copper silicide and copper powder, 5 to 7.5 parts of silicon carbide fibers and 9 to 15 parts of calcined kaolin, wherein in the mixture of the calcined spodumene powder and the petalite powder, the mass ratio of the calcined spodumene powder to the petalite powder is 1:(0.2 to 0.4); in the mixture of the copper silicide and the copper powder, the mass ratio of the copper silicide to the copper powder is 1:(0.8 to 1.1). The high-thermal-conductivity ceramic crucible disclosed by the invention has excellent thermal conductivity, good heat resistance, low water absorption and high compressive strength.

A method for producing a negative electrode, including a step of subjecting a copper foil to a plasma treatment, a step of coating the copper foil subjected to the plasma treatment, with a slurry including an active material containing a silicon atom, and a step of subjecting the copper foil coated with the slurry to a heat treatment to form an intermetallic compound of copper and silicon at an interface between the copper foil and the active material. A negative electrode including a copper foil, an active material layer including an active material containing a silicon atom on the copper foil, and copper silicide at an interface between the copper foil and the active material.

This invention relates to a method of preparing trichlorosilane, which enables trichlorosilane to be obtained at improved yield using silicon having copper silicide uniformly formed thereon, by uniformly distributing and applying a copper compound on the surface of silicon and then performing heat treatment.

A copper microalloy is prepared from the components including, by weight, 0.5%-0.7% of palladium, 0.3%-0.5% of gold, 0.1%-0.3% of silver, 0.05%-0.2% of platinum, 0.05%-0.1% of phosphorus, 0.05%-0.1%of silicon and the balance copper. In the copper microalloy, phosphorus exists in the form of copper phosphide (Cu3P2), and silicon exists in the form of copper silicide (Cu5Si). The invention further provides a copper microalloy wire which is manufactured from the copper microalloy through a wire drawing technology. The invention further provides preparation methods of the copper microalloy and the copper microalloy wire. The copper microalloy wire has good conductivity, high corrosion resistance (the corrosion resistance is higher than that of a pure copper wire), and excellent mechanical strength and electrical fatigue characteristics. The tensile strength of the copper microalloy wire is 5-7 gf, and the power-on fatigue life of the copper microalloy wire is greater than 300 times.

The present invention relates to a method for preparing trichlorosilane. According to the method for preparing trichlorosilane of the present invention, trichlorosilane may be obtained with improved yield using silicon where copper silicide is formed.