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A method for preparing trichlorosilane

A technology of trichlorosilane and silicon tetrachloride, applied in chemical instruments and methods, silicon compounds, metal silicides, etc., can solve the problems of small promotion effect and complicated process

Inactive Publication Date: 2015-11-11
HANWHA CHEMICAL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, although the copper catalyst helps to increase the yield of trichlorosilane in the fixed bed reactor, its promotion effect is minimal in the fluidized bed reactor because the copper particles may agglomerate due to the small particle size, and May not readily come into contact with metallurgical silicon surfaces
In order to solve these problems, Japanese Patent No. 3708649 and Korean Patent Application No. 2007-7023115 propose various methods of supporting copper catalysts on the surface of metallurgical silicon, but the problem is that the process becomes complicated

Method used

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  • A method for preparing trichlorosilane
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  • A method for preparing trichlorosilane

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[0020] The method for preparing trichlorosilane of the present invention includes: heat-treating silicon (Si) and copper (Cu) compounds to a temperature equal to or higher than the melting point of the copper compound to form copper silicide (Cu-silicide) on the silicon. ); and supplying silicon tetrachloride and hydrogen to the Cu-silicide-formed silicon for hydrochlorination.

[0021] As a method for producing trichlorosilane, direct chlorination and hydrochlorination (HC) are commercially used.

[0022] The hydrochlorination reaction is to make silicon with silicon tetrachloride (STC) and hydrogen (H 2 ) reaction to prepare the process of trichlorosilane, the overall reaction is shown in the following formula 1.

[0023] [Formula 1]

[0024] 3SiCl 4 +2H 2 +MG-Si→4SiHCl 3

[0025] The overall reaction of described formula 1 can be divided into two-step reaction as shown below:

[0026] [Formula 2]

[0027] SiCl 4 +H 2 →SiHCl 3 +HCl

[0028] [Formula 3]

[0029] ...

Embodiment 1

[0057] 170 g of MG-Si with a purity of more than 99% and an average particle size of 250 μm were mixed with a content of 1.4 wt% of MG-Si (based on CuCl 2 weight of Cu in CuCl 2 Mixing, the temperature was raised to 700° C. at a rate of 4° C. / min in a mixed gas environment containing hydrogen and nitrogen at a weight ratio of 1:9. The mixture was kept at 700°C for 1 hour, and then cooled to room temperature to obtain MG-Si in which Cu-silicide was formed.

[0058] In a fixed-bed reactor, 170 g of MG-Si formed with Cu-silicide was filled, and then, at a temperature of 525 °C and a pressure of 20 bar, the 2 :SiCl 4 =2:1 molar ratio to carry out the hydrochlorination reaction for 2 to 10 hours to prepare trichlorosilane.

Embodiment 2

[0060] Except that in Example 1 the mixing content is 2.7wt% of MG-Si (based on CuCl 2 weight of Cu in CuCl 2 Except that, trichlorosilane was prepared by the same method as in Example 1.

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Abstract

The present invention relates to a method for preparing trichlorosilane. According to the method for preparing trichlorosilane of the present invention, trichlorosilane may be obtained with improved yield using silicon where copper silicide is formed.

Description

technical field [0001] The invention relates to a method for preparing trichlorosilane. More specifically, the present invention relates to a method for preparing trichlorosilane, which can obtain trichlorosilane in improved yield using copper silicide-forming silicon. This application claims the benefit of Korean Patent Application No. 10-2013-0024602 filed with the Korean Intellectual Property Office on March 07, 2013, the entire disclosure of which is incorporated herein by reference. Background technique [0002] Trichlorosilane (TCS) is one of the most important raw materials for the preparation of silicon for semiconductors or solar cells. As a method for producing trichlorosilane, direct chlorination and hydrochlorination (HC) are commercially used. The reaction process of the hydrochlorination reaction is: provide silicon tetrachloride (STC) and hydrogen (H 2 ), and produce trichlorosilane at a high temperature of 500-600°C and a high pressure of 20-30 bar. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/08B01J6/00
CPCB01J6/00C01B33/06C01B33/10757C01B33/10763C01B33/08
Inventor 金吉浩安贵龙李元翼金俊焕赵景薰
Owner HANWHA CHEMICAL CORPORATION
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