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37results about How to "Simplify the patterning process" patented technology

Semiconductor structure and forming method thereof

The invention provides a semiconductor structure and a forming method thereof. The method comprises: providing a substrate, wherein the substrate comprising a first region, a plurality of second regions and a plurality of third regions, the first region is located between two adjacent third regions, two sides of the first region are respectively provided with one second region, and each second region is located between the first region and the third region; forming a pattern structure on the substrate, wherein the pattern structure comprises a first pattern layer located on the first region, asecond pattern layer located on the second region and a third pattern layer located on the third region, the first pattern layer and the second pattern layer are discrete from each other, and the second pattern layer and the third pattern layer are discrete from each other; removing the second pattern layer; and after the second pattern layer is removed, etching the substrate by taking the firstpattern layer and the third pattern layer as masks to form a base, a first fin part located on the base and a second fin part located on the base, wherein the first fin part is formed by etching by taking the first pattern layer as a mask, and the third fin part is formed by etching by taking the third pattern layer as a mask. According to the invention, the performance of the formed semiconductorstructure is improved.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1
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