Flexible TFT device and preparation method thereof

Abstract

The invention discloses a flexible TFT device and a preparation method thereof. The flexible TFT device sequentially comprises a flexible substrate, a PI adhesion layer, a gate electrode, a dielectriclayer, a PalphaMS modification layer, a semiconductor layer, an interface modification layer and a source and drain electrode layer, wherein the gate electrode contains PEDOT: PSS, the dielectric layer contains a PDMS-HfO2 hybrid material, and the semiconductor layer contains a lanthanum indium zinc oxide-polytetravinylphenol hybrid material. By adopting the organic and inorganic hybrid system material and the TFT device structure, the problems of film layer cracks, displacement and the like caused by bending of the device are reduced, so that the bending resistance and the stability of the flexible TFT device are improved, and the service life of the flexible TFT device is prolonged.

Description

technical field

[0001] The invention relates to the technical field of flexible display, in particular to a flexible TFT device and a preparation method thereof. Background technique

[0002] With the development of new display technologies, flexible displays have attracted widespread attention due to their advantages of thinness, convenience, low manufacturing cost, and bendability. However, in the current technology, component preparation materials and device structures are the key factors that limit the development of flexibility. Therefore, in order to realize a new generation of flexible electronic devices, we must first find new materials with high electrical properties that can cope with mechanical flexibility; secondly, based on these materials to prepare basic unit devices such as diodes and transistors; Device combinatorial integrated logic circuits. In the TFT unit of electronic components, using cheap and large-area thin film deposition technology instead of hig...

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