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Flexible TFT device and preparation method thereof

A device and flexible technology, applied in the field of flexible TFT devices and its preparation, can solve the problems of low carrier mobility, achieve low leakage, reduce film cracks, and improve mechanical flexibility

Pending Publication Date: 2020-11-06
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For organic semiconductor materials that can be used for flexible electronics, although great progress has been made in the past 20 years, the carrier mobility obtained under low-temperature preparation conditions is still significantly lower than that of inorganic materials. Materials In flexible electronic devices, it is first necessary to develop new organic semiconductor materials or to improve the performance of OTFT devices by rationally designing the device structure

Method used

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  • Flexible TFT device and preparation method thereof
  • Flexible TFT device and preparation method thereof
  • Flexible TFT device and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0056] A flexible TFT device, comprising PET flexible substrate, PI adhesion layer, gate electrode, dielectric layer, PαMS modification layer, semiconductor layer, molybdenum oxide interface modification layer and source-drain electrode layer in sequence, and the gate electrode contains PEDOT:PSS , the dielectric layer contains PDMS-HfO 2 In the hybrid material, the semiconductor layer contains lanthanum indium zinc oxide-polytetravinylphenol hybrid material.

[0057] The preparation method of the flexible TFT device of the present embodiment, such as figure 1 shown, including the following steps:

[0058] (1) After tearing off the front protective film of the PET flexible substrate (use a knife to distinguish the front and back), use acetone, isopropanol, ethanol and deionized water to ultrasonically clean it for 4 minutes to remove particulate matter and organic impurities; Dry the water droplets on the surface of PET, and finally place it on a hot plate at 100°C for 8 min...

Embodiment 2

[0072] A flexible TFT device, comprising a PI flexible substrate, a PI adhesion layer, a gate electrode, a dielectric layer, a PαMS modification layer, a semiconductor layer, a TAPC interface modification layer, and a source-drain electrode layer, wherein the gate electrode contains PEDOT:PSS, The dielectric layer contains PDMS-HfO 2 In the hybrid material, the semiconductor layer contains lanthanum indium zinc oxide-polytetravinylphenol hybrid material.

[0073] The preparation method of the flexible TFT device of the present embodiment comprises the following steps:

[0074] (1) After tearing off the front protective film of the PI flexible substrate (use a knife to distinguish the front and back), use acetone, isopropanol, ethanol and deionized water to ultrasonically clean it for 4 minutes to remove particulate matter and organic impurities; Dry the water droplets on the surface of PI, and finally place it on a hot plate at 100°C for 8 minutes to dry;

[0075] (2) Evenly...

Embodiment 3

[0086] A flexible TFT device, comprising PET flexible substrate, PI adhesion layer, gate electrode, dielectric layer, PαMS modification layer, semiconductor layer, molybdenum oxide interface modification layer and source-drain electrode layer in sequence, and the gate electrode contains PEDOT:PSS , the dielectric layer contains PDMS-HfO 2 In the hybrid material, the semiconductor layer contains lanthanum indium zinc oxide-polytetravinylphenol hybrid material.

[0087] The preparation method of the flexible TFT device of the present embodiment comprises the following steps:

[0088] (1) After tearing off the front protective film of the PET flexible substrate (use a knife to distinguish the front and back), use acetone, isopropanol, ethanol and deionized water to ultrasonically clean it for 3 minutes to remove particulate matter and organic impurities; Dry the water droplets on the PET surface, and finally place it on a hot plate at 140°C for 5 minutes to dry;

[0089] (2) Ev...

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Abstract

The invention discloses a flexible TFT device and a preparation method thereof. The flexible TFT device sequentially comprises a flexible substrate, a PI adhesion layer, a gate electrode, a dielectriclayer, a PalphaMS modification layer, a semiconductor layer, an interface modification layer and a source and drain electrode layer, wherein the gate electrode contains PEDOT: PSS, the dielectric layer contains a PDMS-HfO2 hybrid material, and the semiconductor layer contains a lanthanum indium zinc oxide-polytetravinylphenol hybrid material. By adopting the organic and inorganic hybrid system material and the TFT device structure, the problems of film layer cracks, displacement and the like caused by bending of the device are reduced, so that the bending resistance and the stability of the flexible TFT device are improved, and the service life of the flexible TFT device is prolonged.

Description

technical field [0001] The invention relates to the technical field of flexible display, in particular to a flexible TFT device and a preparation method thereof. Background technique [0002] With the development of new display technologies, flexible displays have attracted widespread attention due to their advantages of thinness, convenience, low manufacturing cost, and bendability. However, in the current technology, component preparation materials and device structures are the key factors that limit the development of flexibility. Therefore, in order to realize a new generation of flexible electronic devices, we must first find new materials with high electrical properties that can cope with mechanical flexibility; secondly, based on these materials to prepare basic unit devices such as diodes and transistors; Device combinatorial integrated logic circuits. In the TFT unit of electronic components, using cheap and large-area thin film deposition technology instead of hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40
CPCH10K71/12H10K10/478H10K10/481H10K10/488H10K77/111Y02E10/549Y02P70/50
Inventor 龚岩芬龚政胡诗犇陈志涛郭婵王建太庞超潘章旭刘久澄
Owner GUANGDONG INST OF SEMICON IND TECH
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