Semiconductor structure and forming method thereof

Abstract

The invention provides a semiconductor structure and a forming method thereof. The method comprises: providing a substrate, wherein the substrate comprising a first region, a plurality of second regions and a plurality of third regions, the first region is located between two adjacent third regions, two sides of the first region are respectively provided with one second region, and each second region is located between the first region and the third region; forming a pattern structure on the substrate, wherein the pattern structure comprises a first pattern layer located on the first region, asecond pattern layer located on the second region and a third pattern layer located on the third region, the first pattern layer and the second pattern layer are discrete from each other, and the second pattern layer and the third pattern layer are discrete from each other; removing the second pattern layer; and after the second pattern layer is removed, etching the substrate by taking the firstpattern layer and the third pattern layer as masks to form a base, a first fin part located on the base and a second fin part located on the base, wherein the first fin part is formed by etching by taking the first pattern layer as a mask, and the third fin part is formed by etching by taking the third pattern layer as a mask. According to the invention, the performance of the formed semiconductorstructure is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In the field of semiconductor technology, transistors, as the most basic semiconductor devices, are currently being widely used. Fin field effect transistor is a new complementary metal oxide semiconductor (CMOS) transistor, which can improve circuit control and reduce leakage current, shorten the gate length of transistor, can greatly improve chip processing speed and greatly reduce power consumption, It has been widely used in the circuits of various semiconductor devices. [0003] As the manufacturing of integrated circuits develops towards ultra-large-scale integrated circuits, the internal circuit density is getting larger and larger. With the reduction of technology nodes, the size of the formed semiconductor structure is getting smaller and smaller, forming fin field effect tra...

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Problems solved by technology

[0004] The performance of the fin field effect transistor formed by the existing technology needs to be improved

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