Composite transparent conductive film and preparation method thereof

Abstract

The present invention discloses a composite transparent conductive film and a preparation method thereof. The composite transparent conductive film is formed by stacking a transparent oxide layer and a thin metal layer, wherein the thin metal layer is located under the transparent oxide layer, the thickness of the thin metal layer is 3-30nm, the thin metal layer is in a transparent state, and the thin metal layer has nanopores. The preparation method comprises: the step (1), preparing the thin metal layer; the step (2), preparing the transparent oxide layer to form a required pattern, putting the required pattern into liquid after annealing processing to remove the thin metal layer which is not covered by the transparent oxide layer, storing the transparent oxide layer and the thin metal layer which is covered by the transparent oxide layer, and realizing the patterning of the composite transparent conductive film. The patterning process does not need photo-mask lithography, the prepared composite transparent conductive film is good in resistivity and good in electricity stability, has a certain optical transmissibility, and is heat resisting, antioxidant and erosion-resistant.

Description

technical field [0001] The invention relates to the technical field of conductive films, in particular to a conductive oxide / metal composite transparent conductive film and a patterning method thereof, which can be used in electrode wiring. Background technique [0002] In recent years, transparent oxide conductive thin films, such as ITO, AZO, IZO, FTO, ATO, etc., have been widely used in optoelectronic devices, such as touch screens, electrochromic devices, solar cells, organic light-emitting diodes, and thin-film transistors. [0003] At present, most of the industrialized transparent oxide conductive films are prepared by physical vapor deposition method, and mask or traditional photolithography method is also used to realize the patterning of the film, which not only causes waste of materials, but also complicates the preparation process, resulting in The cost is relatively high. Inkjet printing, as a solution processing technology that can directly achieve patterned d...

AI Technical Summary

Problems solved by technology

In terms of printing preparation, Au is difficult to achieve transparency, mainly because it is difficult to accurately control the thickness of the film below 30nm. Secondly, there are many other impurities in the film, which reduces the light transmittance. In addition, the Au electrode due to the work function Higher, non-ohmic contacts are formed with most oxide semiconductors, which affects carrier injection and is not conducive to the improvement of device performance

[0005] The Au film prepared by evaporation or magnetron sputtering method has high quality, good electrical conductivity and stable chemical properties. film or photolithography to achieve patterning, which is not conducive to the large-scale patterning of thin films

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