Film transistor with copper wire structure and its manufacturing method

Abstract

This invention relates to a film transistor with a copper lead structure and its manufacturing mehod, which utilizes at least one copper alloy layer and a copper layer to form a grid with multiple metal structures to improve atom arrangement among lattice interfaces and keyed jointing among atoms and reduce resistance values to suppress diffusion of Cu ions after heat process to get better electric conductance of film transistors, besides, when figuring the multiple metal thin layers, it' s only necessary to use single layer of Cu etching liquor to simplify the figuring technology.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal screen, in particular to a thin film transistor with a copper wire structure and a manufacturing method thereof. Background technique [0002] As liquid crystal displays are widely used, the size of the displays is gradually increasing. However, as the size of the display increases, the delay problem of the RC circuit becomes more and more serious, so copper metal with low resistance value is developed as the wire. However, the adhesion of copper to the insulating substrate is poor, and Cu ions are easy to diffuse to the active layer, resulting in component failure. In order to increase the adhesion between Cu and the underlying layer and inhibit the diffusion of copper ions, metals such as Mo, Ti, and Ta are often used to form cladding layers. However, in the etching process, two metal layers need to be etched separately. If a single etching solution is used to etch the multi-layer metal,...

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Problems solved by technology

However, the adhesion of copper to the insulating substrate is poor, and Cu ions are easy to diffuse to the active layer, resulting in component failure. In order to increase the adhesion between Cu and the underlying layer and inhibit the diffusion of copper ions, metals such as Mo, Ti, and Ta are often used to form cladding layers. However, in the etching process, two metal layers need to be etched separately. If you want to use a single etching solution to etch the multi-layer metal, it is difficult to achieve ideal etching results due to the different types of metals.

[0003] In addition, if only copper alloy is used as the metal gate, although the copper alloy has been proven to inhibit the diffusion of copper ions and has a good adhesion effect with the substrate, but the copper alloy has a high resistance value and high manufacturing cost of the target. still have doubts about the application

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