Method for preparing novel micro nano composite structure patterned sapphire substrate

A technique for patterning sapphire and sapphire substrates, applied in nanotechnology, semiconductor/solid-state device manufacturing, electrical components, etc. Graphics and other problems, to achieve excellent etching resistance, improve internal quantum efficiency, reduce the effect of dislocation density

Inactive Publication Date: 2015-09-09
NANJING UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, due to the high difficulty of preparing nanopatterns on high-depth micropatterns, traditional photolithography cannot be exposed on such curved surfaces, and nanoimprinting technology is also difficult to prepare nanopatterns on high-curvature substrates.
Therefore, due to the limitation of the preparation method, the research work on the use of micro-nano patterns is rare, and there are no related reports on the preparation of nano-patterns on patterned sapphire substrates.

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  • Method for preparing novel micro nano composite structure patterned sapphire substrate
  • Method for preparing novel micro nano composite structure patterned sapphire substrate

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0026] The present invention first prepares a micron-patterned sapphire substrate by photolithography and sapphire etching, and its period is adjustable; secondly, 10nm metal Ni is vapor-deposited on the surface of the substrate by electron beam evaporation coating equipment; The substrate is put into the annealing furnace, and according to the difference of annealing temperature and time, metal Ni nanoparticles (average diameter is 100-400nm) with adjustable diameter are obtained; the substrate with metal Ni particles is subjected to ICP etching, according to the etching Depending on the time, nano-sapphire column arrays with different depths were etched; the residual Ni mask was removed from the above-etched substrate in dilute nitric acid to obtain a new micro-nano composite structure patterned sapphire substrate.

[0027] In this embodiment, the met...

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Abstract

The invention discloses a method for preparing a novel micron and nano composite structure patterned sapphire substrate. The method specifically includes the following steps that: a) a conical micron patterned sapphire substrate with high curvature and high depth-to-width is prepared through photoetching and etching process; b) a metal nickel layer is formed on the micron patterned sapphire substrate through evaporation, film coating and deposition; c) the sapphire substrate coated with the metal nickel layer is subjected to annealing, so that a micron patterned sapphire substrate with nickel nanoparticles can be obtained; d) with the nickel nanoparticles adopted as a mask, the sapphire substrate is subjected to ICP etching, so that a plurality of nano sapphire column arrays can be formed on the conical patterned sapphire substrate; e) and residual nickel nanoparticles are removed, so that a patterned sapphire substrate with a micron and nano composite structure can be formed. The method for preparing the micron and nano composite structure has the advantages of convenience, quickness and low cost. With the method adopted, and a large-area nano pattern can be prepared on a micron pattern with high depth-to-width ratio and high curvature quickly.

Description

technical field [0001] The invention belongs to the field of photoelectric device preparation and micro-nano processing, and specifically relates to the preparation of a novel micro-nano composite structure patterned sapphire substrate by methods such as photolithography, electron beam evaporation coating, metal annealing self-assembly and etching. Background technique [0002] Patterned sapphire substrate technology (patterned sapphire substrate, PSS) is a method developed in recent years that can improve the external quantum efficiency of LEDs. On the one hand, when GaN is grown epitaxially, PSS will reduce the dislocation density generated, so that the internal quantum efficiency of the LED will be improved; Photons in the layer can exit into the air, which increases the light extraction efficiency (LEE). At present, a micro-patterned sapphire substrate (MPSS) structure is commonly used, which is commonly prepared by photolithography. [0003] Recent research work has s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L33/22B82Y40/00
CPCH01L21/02019B82Y40/00H01L21/02697H01L33/22
Inventor 葛海雄郭旭袁长胜崔玉双陈延峰
Owner NANJING UNIV
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