Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Slushing compound lower-layer membrane monomer and composition as well as patterning method

A resist lower layer and composition technology, which is applied in the field of photolithography, can solve the problems of polluting the resist lower layer film and equipment, etc., and achieve the effect of excellent etching resistance and pollution prevention

Active Publication Date: 2019-07-23
福建泓光半导体材料有限公司
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The spin-coating method requires the use of polymers with sufficient solubility in solvents; at the same time, in order to ensure good etch resistance, it is usually necessary to use polymers with extremely high carbon content, cross-linking agents that can react with polymers, and Additives that perform curing reactions (such as acidic curing catalysts), however, in the high-temperature baking process, the additives generate gas due to thermal decomposition, and there is a concern that the underlying resist film and equipment will be polluted

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Slushing compound lower-layer membrane monomer and composition as well as patterning method
  • Slushing compound lower-layer membrane monomer and composition as well as patterning method
  • Slushing compound lower-layer membrane monomer and composition as well as patterning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0039] According to a preferred embodiment of the present invention, the resist underlayer film monomer is selected from at least one of the following chemical formulas 1-1 to 1-17:

[0040]

[0041] The resist underlayer film monomer provided by the present invention contains a benzoxazine structural unit. Under the action of heating, a ring-opening polymerization reaction such as reaction formula A will occur to form a nitrogen-containing network structure similar to phenolic resin. There is no release of small molecules during the process and the volume shrinkage rate is approximately zero, so there is no concern about polluting the underlying film of the resist and equipment.

[0042]

[0043]When the resist underlayer film monomer is used as the monomer component of the resist underlayer film composition, in the spin coating process of the resist underlayer film composition, due to the structure shown in formula (1) The monomer has low molecular weight and good solu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
polydispersity indexaaaaaaaaaa
polydispersity indexaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of photoetching, and particularly relates to a slushing compound lower-layer membrane monomer and composition as well as a patterning method. The slushing compound lower-layer membrane composition contains a slushing compound lower-layer membrane monomer shown in the formula (I), an aromatic polymer and a solvent, in the formula (I), Ar2 represents arylidene withthe carbon atomic number being 6-30, and R1 and R2 independently represent alkyl with the carbon atomic number being 1-6 or aryl with the carbon atomic number being 6-30. The slushing compound lower-layer membrane composition provided by the invention has the outstanding corrosion resistance, heat resistance, solvent solubility, gap filling feature and planarization feature. In addition, the slushing compound lower-layer membrane composition provided by the invention can have self cross-linking reaction through heating under the condition that no solidifying reaction additive is adopted, andgenerates no gas in the solidifying process, and accordingly can effectively prevent pollution problem of the slushing compound lower-layer membrane and equipment.

Description

technical field [0001] The invention belongs to the field of photolithography, and in particular relates to a resist underlayer film monomer and composition and a pattern forming method. Background technique [0002] The photolithography process is one of the most important process steps in semiconductor manufacturing. Its main function is to copy the pattern on the mask plate to the substrate through the photoresist to prepare for the next etching or ion implantation process. . A typical photolithography process includes: forming a material layer on a semiconductor substrate, coating a photoresist on the material layer, exposing and developing the photoresist layer to provide a photoresist pattern, using a photoresist The etchant pattern acts as a mask to etch the material layer. [0003] In recent years, with the high integration and high speed of semiconductor devices, as the lithography light source used in the formation of photoresist patterns, the short wavelength ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07D498/04C07D265/12C08G61/02G03F1/56
CPCC07D265/12C07D498/04C08G61/02C08G2261/1422G03F1/56
Inventor 王静肖楠
Owner 福建泓光半导体材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products