Phenolic positive photoresist with etching resistance
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A photoresist and etching-resistant technology, applied in the field of photoresist, can solve the problems of complex operation of two-layer film or multi-layer film process, high temperature resistance of photoresist, and low efficiency
Active Publication Date: 2017-03-15
SUNTIFIC MATERIALS WEIFANG LTD
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However, the performance of the existing phenolic positive-type photoresist is very general in terms of etching resistance. In the deep etching process, it is usually used to increase the thickness of the photoresist film and increase the hardening temperature of the photoresist before etching in order to improve Its etching resistance, but the effect is not ideal, and high temperature requires higher temperature resistance of photoresist
It is also reported that a layer of inor...
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Embodiment 1
[0031] 43g novolac resin, 10g 2,1,4-diazonaphthoquinone sulfonate, 16g 2-methylcyclopentadiene manganese tricarbonyl, 1g γ-aminopropyltriethoxysilane, 100g propylene glycol methyl ether acetic acid Esters are mixed, fully dissolved, and then filtered through a filter membrane with a pore size of 0.02 micron to obtain photoresist 1.
[0032] The structure of novolak resin in the present embodiment is as follows:
[0033] Wherein R is methyl, n=50.
Embodiment 2
[0035] 43g novolac resin, 10g 2,1,5-diazonaphthoquinone sulfonate, 16g zirconium propionate, 1g N-(β-aminoethyl)-γ-aminopropyltrimethoxysilane, 100g propylene glycol methyl Ether acetate was mixed, fully dissolved, and then filtered through a filter membrane with a pore size of 0.02 micron to obtain photoresist 2.
[0036] The structure of novolak resin in the present embodiment is as follows:
[0037] Wherein, R1 is propyl group, n=30.
Embodiment 3
[0039] 65g of novolac resin, 15g of 1,2-benzoquinonediazide-4-sulfonic acid, 8g of iron trifluoroacetylacetonate (CAS: 14526-22-8), 2g of γ-aminopropyltriethoxysilane, 40g of benzene and 80g of propylene glycol methyl ether acetate were mixed, fully dissolved, and then filtered through a filter membrane with a pore size of 0.02 micron to obtain photoresist 3.
[0040] The structure of novolak resin in the present embodiment is as follows:
[0041] Wherein R is methyl, n=50.
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Abstract
The invention discloses a phenolic positive photoresist with etching resistance. The phenolic positive photoresist comprises the following main components: phenolic resin, a photosensitive compound and a solvent. The phenolic positive photoresist is characterized by also containing 0.5-30wt% of metal compound capable of being dissolved into the solvent. According to the photoresist disclosed by the invention, in a dry etching process after photoetching, physical bombardment and chemical reaction double etching is carried out on adhesive film patterns by plasma, volatile reactants formed by carbon and oxygen components in an adhesive layer are removed while the metal components are slowly deposited, and a new metal protection layer is formed on the surface of an adhesive film, thereby achieving the target of improving the etching resistance of the photoresist. The photoresist disclosed by the invention can be widely used for the field of production of microelectronic components requiring dry etching.
Description
technical field [0001] The invention belongs to the field of photoresists, and in particular relates to an etching-resistant phenolic positive-type photoresist. Background technique [0002] Photoresist is the most critical basic material for the development of microelectronics technology. Etch-resistant thin-film materials whose solubility changes. After the photoresist film is exposed and developed to form a photolithographic pattern, dry or wet etching will be performed. Part of the substrate material not covered by the film is directly etched, while the surface of the substrate covered by the film is protected by the photoresist film from being etched. Etching resistance is a very important evaluation index of photoresist. Excellent etch resistance can ensure that the photoresist can protect the substrate surface from damage during the etching process, effectively simplify the etching process, and greatly improve the etching product. yield. [0003] Phenolic positive...
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