47 results about "Diazonaphthoquinone" patented technology

The invention discloses a method for detecting the content of trace metal ions in a diazo naphthoquinone photosensitizer. The method comprises the following steps: sample pretreatment: weighing diazonaphthoquinone photosensitizer powder in a clean room, putting the diazonaphthoquinone photosensitizer powder into a cleaned and dried wide-mouth PFA bottle, adding an organic reagent, and carrying out ultrasonic treatment until a solid is completely dissolved; the method comprises the following steps: testing: adding a metal standard substance into an organic solvent to prepare three standard solutions with different concentrations; debugging an instrument, determining target metal in the standard solution in a Cool mode, a No Gas mode and a He mode by using an inductively coupled plasma mass spectrometer to obtain a signal intensity value (CPS value) corresponding to each metal ion concentration in the standard solution, and establishing a standard curve; and measuring the sample in which the photosensitizer is dissolved by using the same steps to obtain the content of metal ions in the sample. According to the method, appropriate detection conditions are optimized for different elements to be detected in the diazo naphthoquinone photosensitizer, polyatomic ion interference and matrix effect in a sample are mainly reduced, the content of 16 metal ions can be accurately detected at the same time, and the test efficiency is high.

The invention relates to a photosensitive compound suitable for G / I line photoresist. The main structure of the photosensitive compound is composed of a multi-carbonyl enol compound and diazonaphthoquinone sulfonyl. The invention also provides a synthesis method of the photosensitive compound, the diazo naphthoquinone sulfonate type photosensitive compound with excellent performance can be prepared by using the method, and the component proportion of the photosensitive compound can be adjusted at will. The invention also provides an application of the photosensitive compound in photoresist configuration, and the prepared photoresist has good performance.

The application provides a polyhydroxy phenolic compound, a preparation method thereof, a diazonium naphthoquinone sulfonate, a preparation method thereof and a photoresist composition. The polyhydroxy phenolic compound has the following structure shown in formula (I). The diazonium naphthoquinone sulfonate prepared by using the polyhydroxy phenolic compound provided by the application as an intermediate is applied to the photoresist composition as a photosensitive agent, and the obtained photoresist not only has clear resolution and high photosensitivity, but also has excellent thermal stability and etching resistance, and has a wide application prospect in the field of semiconductors.

The invention relates to the technical field of photoresists, and particularly provides a photoresist and a preparation method thereof.The photoresist is prepared from phenolic resin, a diazonaphthoquinone photosensitizer, phenyl triphenyl phosphate and a solvent, and the stability and definition of an exposed pattern are optimized through the combination of a special polymer, a sensitizer and the solvent. In the embodiment, the sensitivity range of the formula is 55 mJ / cm < 2 > to 120 mJ / cm < 2 >, the resolution ratio reaches 0.05 mu m, and burrs are controlled to be 0.05 mu m or below. The technology can be widely applied to the fields of semiconductor chip manufacturing, microelectronic packaging, display devices and nanotechnology, meets the production requirements of high precision and high efficiency, and has good market prospects and commercial application value.

The present invention belongs to the field of photosensitive resin compositions, and specifically discloses a positive photosensitive resin composition and a method for preparing a cured pattern. The positive photosensitive resin composition comprises (A) an alkali-soluble resin polymer; (B) a crosslinking compound, wherein the crosslinking compound is selected from at least two of a first crosslinking compound, a second crosslinking compound, and a third crosslinking compound; and (C) a phenolic diazonaphthoquinone sulfonate, wherein the phenolic diazonaphthoquinone sulfonate comprises a first phenolic diazonaphthoquinone sulfonate and a second phenolic diazonaphthoquinone sulfonate. The method for preparing the cured pattern is to coat the above positive photosensitive resin composition on a substrate, and after baking, exposure, development, and curing, a cured pattern is obtained. The present invention has a good development rate during the development process after exposure in the process of preparing the cured pattern, and has a high dark film retention rate after development and forms a cured pattern that is completely free of cracks.

The invention provides a positive photoresist composition as well as a preparation method and application thereof, and the positive photoresist composition comprises the following components in parts by weight: 100 parts of modified phenolic resin, 0.5-10 parts of a diazonaphthoquinone compound and 0.01-0.1 part of a photoacid generator, the molecular structure of the modified phenolic resin comprises a structure as shown in a formula I. Phenolic resin with a specific structure is matched with a diazonaphthoquinone compound and a photoacid generator, so that the resolution and photosensitivity of the photoresist can be effectively improved on the premise of ensuring low film residue rate of the photoresist, a PEB process is not needed, the morphology of the photoresist is not influenced by trace alkali in air after development, and the service life of the photoresist is prolonged. And the industrial requirements of low cost and high performance are met.

The present application relates to an electroactive compound, a composition comprising the same, and a pattern forming method, and more particularly, to a composition comprising an acid-sensitive polymer comprising a first repeating unit derived from a monomer containing an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound, the non-polymeric electron acceptor compound having an electron affinity greater than that of the photoacid generator compound, where the non-polymeric electron acceptor compound does not generate a photoacid, and where the non-polymeric electron acceptor compound does not include a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, where the solvent is present in the composition in an amount greater than 50% by weight, based on the total weight of the composition, where the composition is a positive EUV photoresist or an electron beam photoresist.

The invention relates to a preparation method of a tetrahydroxy tetraphenyl ethylene photoinitiator. According to the method, tetrahydroxy tetraphenyl ethylene and a diazo naphthoquinone sulfonyl chloride compound are subjected to a condensation reaction to prepare the diazo naphthoquinone photoinitiator, and the photolysis rate of the diazo naphthoquinone photoinitiator is tested. The preparation method specifically comprises the following steps: in an organic solvent, taking tetrahydroxy tetraphenyl ethylene and diazonaphthoquinone sulfonyl chloride as raw materials, and carrying out esterification condensation reaction under the action of a catalyst to obtain the tetrahydroxy tetraphenyl ethylene photoinitiator. The tetrahydroxy tetraphenyl ethylene photoinitiator synthesized by the invention has the following advantages: compared with the traditional photoinitiator, the light sensitivity is obviously improved; the ultraviolet absorption capability is stronger, and the photosensitive performance is more excellent.

The method comprises the following steps: taking diazonaphthol sulfonyl chloride and a phenolic hydroxyl compound as raw materials, taking aminated polystyrene porous microspheres as an acid-binding agent, and carrying out heat preservation reaction in a polar solvent to obtain a first product; 2, filtering the first product obtained in the step 1, and recovering to obtain aminated polystyrene porous microsphere hydrochloride; carrying out post-treatment on the aminated polystyrene porous microsphere hydrochloride in the step 2 to obtain a crude product diazo naphthoquinone sulfonate; and 3, pulping and washing the crude product diazonaphthoquinone sulfonate in the step 3 with a solvent, filtering, and drying to obtain the product diazonaphthoquinone sulfonate. The synthesis method disclosed by the invention is simple to operate, low in cost, very suitable for industrialization and capable of being widely popularized and used.

The invention discloses a flexible display device and a photosensitive material or a compound suitable for forming patterns of an insulating film or a protective film in flexible display manufacturing, and the compound is shown as a structural formula (I). The photosensitive material has the advantages of low curing temperature, high elastic recovery rate and high light transmittance; the technical contradiction of a traditional insulating film material is overcome, and the problem of color development of diazonaphthoquinone is solved.

The invention provides cholic acid derivative resin and a preparation method thereof, photoresist and application thereof, and a photoetching method, and can be applied to the technical field of photoresist. According to the cholic acid derivative resin, bio-based cholic acid tert-butyl ester is used as a skeleton, and two functional groups including a diazonaphthoquinone sulfonate group and a tert-butyl ester group are introduced into molecules of the bio-based cholic acid tert-butyl ester to form a resin structure with a dual-sensitization characteristic. The photoresist composition comprises 10%-20% of the resin, 1%-5% of a photoacid generator, 1%-2% of an additive and an organic solvent. The composition shows high light transmittance in i-line photoetching, the sensitivity of the composition is lower than 130 mJ / cm, and patterning with the resolution of 64 nm can be achieved. The invention also provides a corresponding resin preparation method and a photoetching process, which are suitable for i-line projection photoetching, interference photoetching, near-field photoetching and super-resolution photoetching, and have the advantages of high resolution, environmental friendliness and good process compatibility.

The invention discloses an acrylic resin photoresist composition as well as a preparation method and application thereof, and the photoresist composition comprises the following components in parts by mass: 30-60 parts of photosensitive resin, 10-30 parts of alicyclic epoxy compound and 5-20 parts of diazonaphthoquinone photoactive compound. Wherein the photosensitive resin comprises at least one of a repeating unit derived from an acrylate monomer, a repeating unit derived from a styrene monomer and a repeating unit derived from an N-substituted maleimide monomer; the weight-average molecular weight of the photosensitive resin is 2000 to 20000 g / mol. The cured film formed by the photoresist composition can effectively improve the heat resistance, has excellent insulating property, high penetration rate and good air permeability, can effectively flatten the terrain on the Array side, improves poor contact, reduces the unevenness of the substrate surface, and keeps good photosensitive property and resolution.

The invention provides a method for reducing the content of chloride ions in a photosensitizer, which comprises the following steps: before the synthesis reaction of a diazo naphthoquinone photosensitizer is finished, adding organic amine into a diazo naphthoquinone photosensitizer synthesis reaction system, after the reaction is finished, adjusting the pH value to be acidic, fully stirring, and filtering the reaction liquid to obtain a reaction filter cake and a reaction filtrate, and pouring the reaction filtrate into pure water, separating out a large amount of solids, filtering, washing the filtered filter cake with pure water, and drying the filter cake to obtain the diazo naphthoquinone photosensitizer. According to the method, organic amine is added when the reaction is about to be finished, hydrochloride precipitates are formed, chloride ions are greatly reduced after preliminary filtration, and meanwhile, the crystallization form of the crystallized sensitizer is changed into porous loose large particles, so that the water washing consumption is reduced, the water washing time is shortened, and finally, the chloride ion content is reduced to 10 ppm or below.

The present disclosure provides a high refractive index calixarene derivative photoresist and a preparation method and application thereof. The photoresist comprises a solvent and a main component, which is a calixarene derivative molecule containing a diazonaphthoquinone group and a sulfide structure. The photoresist of the present disclosure has the characteristics of high resolution, high refractive index and high corrosion resistance, and is suitable for use in immersion lithography technology.

The present application provides a phenolic compound, a preparation method, an application thereof, and a photoresist, belonging to the field of photolithography technology. The phenolic compound of the present application can improve the resolution of the photoresist and at the same time make the photoresist have better photolithography performance, specifically manifested in better sensitivity, greater contrast, a morphology with a more vertical sidewall angle, and a larger process window. The photoresist comprises 10 to 30 wt% of a phenolic resin, 2 to 10 wt% of a diazonaphthoquinone sensitizer, 0.1 to 5 wt% of a leveling agent, 40 to 80 wt% of a solvent, and 0.1 to 10 wt% of a phenolic compound.

This invention relates to the field of photoresist technology, specifically to a modification method for photoresists. The photoresist is a type of positive photoresist, comprising a phenolic polymer resin, a diazonoquinone-type photoinitiator, a solvent, and additives. This invention uses a multi-carbon-based enol compound as a precursor to prepare a diazonoquinone sulfonate-type photosensitive compound. The aldehyde group carried in the diazonoquinone sulfonate-type photosensitive compound is used to graft the photoinitiator-phenolic resin coupling product with an amine additive via a Schiff base reaction, adjusting its dissolution inhibition effect, thereby enhancing key properties of the photoresist such as resolution, etching resistance, and edge roughness after exposure and development.

The present invention relates to a highly sensitive positive photoresist composition, its synthesis method and cured film, which includes an organic solvent and a solute dissolved in the organic solvent. The weight ratio of the solute is 15-60%. The solute is composed of an acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups, a silicone copolymer, a diazonaphthoquinone compound and a surfactant. The weight ratio of the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups in the solute is 60-80%. The weight ratio of the diazonaphthoquinone compound to the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups is (2-20):100. In the present invention, the acrylate copolymer and the silicone copolymer are used as binders together. The acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups can improve the solubility of the polymer in the developer, making it easier for the photoresist to form a pattern during the exposure process, and further enhancing the sensitivity of the photoresist composition.

The invention discloses a diazo naphthoquinone type photoinitiator with a polypyrrole unit, and belongs to the field of near ultraviolet photoinitiators. According to the present invention, the polypyrrole unit-diazo naphthoquinone type photoinitiator is synthesized through the simple and efficient method, the ultraviolet visible absorption peak value of the photoinitiator is 355-450 nm, the half peak width is about 50-58 nm, the near ultraviolet absorption requirement is completely met, and the near ultraviolet light initiator can initiate the monomer polymerization under the near ultraviolet light irradiation so as to be used as the photocuring material.

The present invention relates to resist compositions comprising a polymer component, a photoacid generator component (PAG), a photoactive diazonaphthoquinone component (PAC), a base component, a solvent component, and optionally, a heterocyclic thiol component. The polymer component is a Novolak derivative, comprising Novolak repeat units with free phenolic hydroxy moieties, and Novolak repeat units comprising phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The acetal moiety is elected from a mono functional alkyl acetal moiety protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, an acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety; a di-functional acetal comprising moiety, linking and protecting two repeat units comprising Novolak phenolic hydroxy moieties, forming a linking point in said polymer component between two different polymer chains in said polymer component, and a mixture of any of these three types of acid cleavable acetal moieties. The PAC component is selected from said acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, a free PAC component, and a mixture of these two types of PAC components. The present invention also relates to the methods of using the present compositions in either in thick or thin film photoresist device manufacturing methodologies.

The present invention provides electroactive compounds, compositions containing electroactive compounds, and methods for pattern formation. [Solution] A composition comprising: an acid-sensitive polymer containing a first repeating unit derived from a monomer containing an acid-degradable group; a photoacid generator compound; a nonpolymer electron acceptor compound having an electron affinity greater than the electron affinity of the photoacid generator compound, which does not generate photoacid and does not contain a plurality of diazonaphthoquinone (DNQ) groups; and a solvent present in the composition in an amount exceeding 50 weight percent based on the total weight of the composition, wherein the composition is a positive-type EUV photoresist or electron beam resist.

The invention provides a diazo naphthoquinone type photosensitive compound and a preparation method and application thereof in photoresist, and the preparation method comprises the following steps: mixing diazo naphthoquinone sulfonyl chloride and a phenolic compound in an organic solvent, adding ion exchange resin and an alkaline compound, and reacting to obtain the diazo naphthoquinone type photosensitive compound. According to the method, the ion exchange resin and the alkaline compound are combined, the ion exchange resin not only has an adsorption effect, but also can catalyze the reaction under the cooperation of the alkaline compound, and through the combined action of the ion exchange resin and the alkaline compound, efficient synthesis of the photosensitive compound with extremely low ion (Cl <->) impurities can be achieved; moreover, the ion exchange resin can be recycled and does not generate a large amount of waste, so that the synthesis of the ultra-pure diazo naphthoquinone type photosensitive compound can be realized.

The application provides a photoresist and application thereof, and belongs to the technical field of semiconductor and integrated circuit. The photoresist comprises 10wt%-30wt% phenolic resin, 2wt%-10wt% diazonaphthoquinone photosensitizer and 0.1wt%-10wt% additive. The application adds the additive containing halogen into the diazonaphthoquinone type photoresist, the additive can interact with other components in the photoresist, thereby improving the photosensitivity of the photoresist, and the photoresist can have good photoetching performance, and the specific performance is that the side wall has a relatively vertical appearance.

The invention provides a microelectronic photoetching lift-off processing method and a microelectronic device. The processing method comprises the following steps: providing a substrate; one end of the substrate is coated with a photoresist material layer, and the photoresist material layer at least comprises a diazonaphthoquinone photosensitizer; putting the epitaxial wafer coated with the photoresist material layer into a first developing solution for soaking so as to form a dissolution-resistant layer on the surface of the photoresist material layer; performing pattern exposure processing on the epitaxial wafer according to a preset pattern; carrying out developing treatment on the exposed epitaxial wafer by adopting a second developing solution, and dissolving the dissolution-resistant layer subjected to the exposure reaction and the photoresist material layer at the bottom of the dissolution-resistant layer so as to form a preset pattern on the substrate; and depositing a metal material on the surface of the epitaxial wafer on which the preset pattern is formed, and removing the residual photoresist material layer to form a metal pattern on the surface of the substrate so as to complete photoetching lift-off operation. The microelectronic photoetching lift-off processing method disclosed by the invention is high in precision and good in pattern transfer quality.

The present application relates to a photosensitive compound for G / I line photoresist, which is composed of polycarbonyl enol compound and diazonaphthoquinone sulfonyl group. The present application also provides a synthesis method of the photosensitive compound, by which a diazonaphthoquinone sulfonate photosensitive compound with excellent performance can be prepared, and the component ratio of the photosensitive compound can be adjusted arbitrarily. The present application also provides the application of the photosensitive compound in photoresist configuration, and the configured photoresist has good performance.

The application discloses a kind of polyhydroxy anthracene skeleton compounds and its photoinitiator application, a kind of polyhydroxy anthracene skeleton compounds of the application is used as photoinitiator precursor, the structure of this series of compounds has anisotropy, hydroxyl is uniformly distributed and steric hindrance is small, and after being combined with diazonium naphthoquinone photosensitizer (DNQ), background absorption cannot be generated to influence.Therefore, the compound of this type can be used as new photoinitiator, and is expected to shine in the field of semiconductors.

A photoresist composition, a pattern forming method using near-field surface layer imaging, and a deposition device. The photoresist composition comprises: a solvent; a molecular glass compound, which is a calixarene derivative grafted with diazonaphthoquinone and serves as a film-forming component and a photosensitive component; and an affinity inhibitor, which is at least used for protecting a hydroxyl group in the photoresist composition, so as to improve the contrast ratio of an exposure area and a non-exposure area during the formation of a pattern. The photoresist composition can be exposed within the full thickness range of the photoresist by means of near-field photolithography, thereby achieving high-resolution imaging.

According to the present invention, resolution is improved by adding a small amount of an organic solvent in development of a positive photosensitive polyimide resin.　Provided is an alkali developing solution for positive photosensitive polyimides, the alkali developing solution being used when a photosensitive layer formed from a positive photosensitive resin composition including a diazonaphthoquinone-containing polyimide structure is exposed in a pattern form and then developed, wherein (poly)glycerol is contained in an alkaline aqueous solution. The (poly)glycerin content of the alkali aqueous solution is 1-4 mass%.

The invention discloses a photosensitive resin compound for an insulating flat layer of a display device as well as a preparation method and application of the photosensitive resin compound. The photosensitive ink comprises the following components in parts by weight: 10-30 parts of styrene acrylic resin, 1-15 parts of a siloxane compound, 1-10 parts of a photosensitive compound, 0.5-2 parts of an auxiliary agent and 150-300 parts of a solvent, wherein the photosensitive compound is diazo naphthoquinone ester containing a plurality of phenolic hydroxyl groups; the styrene acrylic resin is prepared according to the following steps: mixing a functional monomer, a hydrophilic monomer, a crosslinking monomer, a hydrophobic monomer and styrene, and carrying out polymerization reaction under the action of an initiator, so as to obtain the styrene acrylic resin. After film formation, the photosensitive resin compound has excellent insulativity, flatness and visible light permeability, also has good chemical stability, weather resistance and high heat resistance, and can be used for interlayer insulating films in display products or other electronic products.

A quantum dot material includes a quantum dot body and a ligand material coordinately bonded to the quantum dot body. The quantum dot material further includes a cross-linking agent, and the cross-linking agent includes at least two diazonaphthoquinone units. Each of the at least two diazonaphthoquinone units is configured to undergo a photochemical reaction under irradiation to generate a carbene intermediate; the ligand material is configured to be bonded to the carbene intermediate through an addition reaction to form a cross-linked quantum dot material.

The disclosed subject matter relates to a resist composition comprising: (A) an acetal-functionalized acrylic polymer component comprising recurring units selected from recurring units having structures (1), (2), (3), (4), (5), (6), and (7); (B) a tertiary alkyl-functionalized acrylic polymer component comprising recurring units selected from recurring units having structures (1a), (2a), (3a), (4a), (5a), (6a), and (7a); (C) a phenolic resin component comprising a novolak-based resin; (D) a photoacid generator (PAG) component, and (E) a solvent component, wherein the resist composition does not include a diazonaphthoquinone (DNQ) component.