30 results about "Diazonaphthoquinone" patented technology

The invention discloses a method for detecting the content of trace metal ions in a diazo naphthoquinone photosensitizer. The method comprises the following steps: sample pretreatment: weighing diazonaphthoquinone photosensitizer powder in a clean room, putting the diazonaphthoquinone photosensitizer powder into a cleaned and dried wide-mouth PFA bottle, adding an organic reagent, and carrying out ultrasonic treatment until a solid is completely dissolved; the method comprises the following steps: testing: adding a metal standard substance into an organic solvent to prepare three standard solutions with different concentrations; debugging an instrument, determining target metal in the standard solution in a Cool mode, a No Gas mode and a He mode by using an inductively coupled plasma mass spectrometer to obtain a signal intensity value (CPS value) corresponding to each metal ion concentration in the standard solution, and establishing a standard curve; and measuring the sample in which the photosensitizer is dissolved by using the same steps to obtain the content of metal ions in the sample. According to the method, appropriate detection conditions are optimized for different elements to be detected in the diazo naphthoquinone photosensitizer, polyatomic ion interference and matrix effect in a sample are mainly reduced, the content of 16 metal ions can be accurately detected at the same time, and the test efficiency is high.

The application provides a polyhydroxy phenolic compound, a preparation method thereof, a diazonium naphthoquinone sulfonate, a preparation method thereof and a photoresist composition. The polyhydroxy phenolic compound has the following structure shown in formula (I). The diazonium naphthoquinone sulfonate prepared by using the polyhydroxy phenolic compound provided by the application as an intermediate is applied to the photoresist composition as a photosensitive agent, and the obtained photoresist not only has clear resolution and high photosensitivity, but also has excellent thermal stability and etching resistance, and has a wide application prospect in the field of semiconductors.

The invention provides a positive photoresist composition as well as a preparation method and application thereof, and the positive photoresist composition comprises the following components in parts by weight: 100 parts of modified phenolic resin, 0.5-10 parts of a diazonaphthoquinone compound and 0.01-0.1 part of a photoacid generator, the molecular structure of the modified phenolic resin comprises a structure as shown in a formula I. Phenolic resin with a specific structure is matched with a diazonaphthoquinone compound and a photoacid generator, so that the resolution and photosensitivity of the photoresist can be effectively improved on the premise of ensuring low film residue rate of the photoresist, a PEB process is not needed, the morphology of the photoresist is not influenced by trace alkali in air after development, and the service life of the photoresist is prolonged. And the industrial requirements of low cost and high performance are met.

The present application relates to an electroactive compound, a composition comprising the same, and a pattern forming method, and more particularly, to a composition comprising an acid-sensitive polymer comprising a first repeating unit derived from a monomer containing an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound, the non-polymeric electron acceptor compound having an electron affinity greater than that of the photoacid generator compound, where the non-polymeric electron acceptor compound does not generate a photoacid, and where the non-polymeric electron acceptor compound does not include a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, where the solvent is present in the composition in an amount greater than 50% by weight, based on the total weight of the composition, where the composition is a positive EUV photoresist or an electron beam photoresist.

The invention relates to a preparation method of a tetrahydroxy tetraphenyl ethylene photoinitiator. According to the method, tetrahydroxy tetraphenyl ethylene and a diazo naphthoquinone sulfonyl chloride compound are subjected to a condensation reaction to prepare the diazo naphthoquinone photoinitiator, and the photolysis rate of the diazo naphthoquinone photoinitiator is tested. The preparation method specifically comprises the following steps: in an organic solvent, taking tetrahydroxy tetraphenyl ethylene and diazonaphthoquinone sulfonyl chloride as raw materials, and carrying out esterification condensation reaction under the action of a catalyst to obtain the tetrahydroxy tetraphenyl ethylene photoinitiator. The tetrahydroxy tetraphenyl ethylene photoinitiator synthesized by the invention has the following advantages: compared with the traditional photoinitiator, the light sensitivity is obviously improved; the ultraviolet absorption capability is stronger, and the photosensitive performance is more excellent.

The method comprises the following steps: taking diazonaphthol sulfonyl chloride and a phenolic hydroxyl compound as raw materials, taking aminated polystyrene porous microspheres as an acid-binding agent, and carrying out heat preservation reaction in a polar solvent to obtain a first product; 2, filtering the first product obtained in the step 1, and recovering to obtain aminated polystyrene porous microsphere hydrochloride; carrying out post-treatment on the aminated polystyrene porous microsphere hydrochloride in the step 2 to obtain a crude product diazo naphthoquinone sulfonate; and 3, pulping and washing the crude product diazonaphthoquinone sulfonate in the step 3 with a solvent, filtering, and drying to obtain the product diazonaphthoquinone sulfonate. The synthesis method disclosed by the invention is simple to operate, low in cost, very suitable for industrialization and capable of being widely popularized and used.

The invention discloses a flexible display device and a photosensitive material or a compound suitable for forming patterns of an insulating film or a protective film in flexible display manufacturing, and the compound is shown as a structural formula (I). The photosensitive material has the advantages of low curing temperature, high elastic recovery rate and high light transmittance; the technical contradiction of a traditional insulating film material is overcome, and the problem of color development of diazonaphthoquinone is solved.

The invention provides cholic acid derivative resin and a preparation method thereof, photoresist and application thereof, and a photoetching method, and can be applied to the technical field of photoresist. According to the cholic acid derivative resin, bio-based cholic acid tert-butyl ester is used as a skeleton, and two functional groups including a diazonaphthoquinone sulfonate group and a tert-butyl ester group are introduced into molecules of the bio-based cholic acid tert-butyl ester to form a resin structure with a dual-sensitization characteristic. The photoresist composition comprises 10%-20% of the resin, 1%-5% of a photoacid generator, 1%-2% of an additive and an organic solvent. The composition shows high light transmittance in i-line photoetching, the sensitivity of the composition is lower than 130 mJ / cm, and patterning with the resolution of 64 nm can be achieved. The invention also provides a corresponding resin preparation method and a photoetching process, which are suitable for i-line projection photoetching, interference photoetching, near-field photoetching and super-resolution photoetching, and have the advantages of high resolution, environmental friendliness and good process compatibility.

The invention discloses an acrylic resin photoresist composition as well as a preparation method and application thereof, and the photoresist composition comprises the following components in parts by mass: 30-60 parts of photosensitive resin, 10-30 parts of alicyclic epoxy compound and 5-20 parts of diazonaphthoquinone photoactive compound. Wherein the photosensitive resin comprises at least one of a repeating unit derived from an acrylate monomer, a repeating unit derived from a styrene monomer and a repeating unit derived from an N-substituted maleimide monomer; the weight-average molecular weight of the photosensitive resin is 2000 to 20000 g / mol. The cured film formed by the photoresist composition can effectively improve the heat resistance, has excellent insulating property, high penetration rate and good air permeability, can effectively flatten the terrain on the Array side, improves poor contact, reduces the unevenness of the substrate surface, and keeps good photosensitive property and resolution.

The invention provides a method for reducing the content of chloride ions in a photosensitizer, which comprises the following steps: before the synthesis reaction of a diazo naphthoquinone photosensitizer is finished, adding organic amine into a diazo naphthoquinone photosensitizer synthesis reaction system, after the reaction is finished, adjusting the pH value to be acidic, fully stirring, and filtering the reaction liquid to obtain a reaction filter cake and a reaction filtrate, and pouring the reaction filtrate into pure water, separating out a large amount of solids, filtering, washing the filtered filter cake with pure water, and drying the filter cake to obtain the diazo naphthoquinone photosensitizer. According to the method, organic amine is added when the reaction is about to be finished, hydrochloride precipitates are formed, chloride ions are greatly reduced after preliminary filtration, and meanwhile, the crystallization form of the crystallized sensitizer is changed into porous loose large particles, so that the water washing consumption is reduced, the water washing time is shortened, and finally, the chloride ion content is reduced to 10 ppm or below.

The present disclosure provides a high refractive index calixarene derivative photoresist and a preparation method and application thereof. The photoresist comprises a solvent and a main component, which is a calixarene derivative molecule containing a diazonaphthoquinone group and a sulfide structure. The photoresist of the present disclosure has the characteristics of high resolution, high refractive index and high corrosion resistance, and is suitable for use in immersion lithography technology.

This invention relates to the field of photoresist technology, specifically to a modification method for photoresists. The photoresist is a type of positive photoresist, comprising a phenolic polymer resin, a diazonoquinone-type photoinitiator, a solvent, and additives. This invention uses a multi-carbon-based enol compound as a precursor to prepare a diazonoquinone sulfonate-type photosensitive compound. The aldehyde group carried in the diazonoquinone sulfonate-type photosensitive compound is used to graft the photoinitiator-phenolic resin coupling product with an amine additive via a Schiff base reaction, adjusting its dissolution inhibition effect, thereby enhancing key properties of the photoresist such as resolution, etching resistance, and edge roughness after exposure and development.

The invention discloses a diazo naphthoquinone type photoinitiator with a polypyrrole unit, and belongs to the field of near ultraviolet photoinitiators. According to the present invention, the polypyrrole unit-diazo naphthoquinone type photoinitiator is synthesized through the simple and efficient method, the ultraviolet visible absorption peak value of the photoinitiator is 355-450 nm, the half peak width is about 50-58 nm, the near ultraviolet absorption requirement is completely met, and the near ultraviolet light initiator can initiate the monomer polymerization under the near ultraviolet light irradiation so as to be used as the photocuring material.

The present invention provides electroactive compounds, compositions containing electroactive compounds, and methods for pattern formation. [Solution] A composition comprising: an acid-sensitive polymer containing a first repeating unit derived from a monomer containing an acid-degradable group; a photoacid generator compound; a nonpolymer electron acceptor compound having an electron affinity greater than the electron affinity of the photoacid generator compound, which does not generate photoacid and does not contain a plurality of diazonaphthoquinone (DNQ) groups; and a solvent present in the composition in an amount exceeding 50 weight percent based on the total weight of the composition, wherein the composition is a positive-type EUV photoresist or electron beam resist.

The invention provides a diazo naphthoquinone type photosensitive compound and a preparation method and application thereof in photoresist, and the preparation method comprises the following steps: mixing diazo naphthoquinone sulfonyl chloride and a phenolic compound in an organic solvent, adding ion exchange resin and an alkaline compound, and reacting to obtain the diazo naphthoquinone type photosensitive compound. According to the method, the ion exchange resin and the alkaline compound are combined, the ion exchange resin not only has an adsorption effect, but also can catalyze the reaction under the cooperation of the alkaline compound, and through the combined action of the ion exchange resin and the alkaline compound, efficient synthesis of the photosensitive compound with extremely low ion (Cl <->) impurities can be achieved; moreover, the ion exchange resin can be recycled and does not generate a large amount of waste, so that the synthesis of the ultra-pure diazo naphthoquinone type photosensitive compound can be realized.

The application provides a photoresist and application thereof, and belongs to the technical field of semiconductor and integrated circuit. The photoresist comprises 10wt%-30wt% phenolic resin, 2wt%-10wt% diazonaphthoquinone photosensitizer and 0.1wt%-10wt% additive. The application adds the additive containing halogen into the diazonaphthoquinone type photoresist, the additive can interact with other components in the photoresist, thereby improving the photosensitivity of the photoresist, and the photoresist can have good photoetching performance, and the specific performance is that the side wall has a relatively vertical appearance.

The present application relates to a photosensitive compound for G / I line photoresist, which is composed of polycarbonyl enol compound and diazonaphthoquinone sulfonyl group. The present application also provides a synthesis method of the photosensitive compound, by which a diazonaphthoquinone sulfonate photosensitive compound with excellent performance can be prepared, and the component ratio of the photosensitive compound can be adjusted arbitrarily. The present application also provides the application of the photosensitive compound in photoresist configuration, and the configured photoresist has good performance.

The application discloses a kind of polyhydroxy anthracene skeleton compounds and its photoinitiator application, a kind of polyhydroxy anthracene skeleton compounds of the application is used as photoinitiator precursor, the structure of this series of compounds has anisotropy, hydroxyl is uniformly distributed and steric hindrance is small, and after being combined with diazonium naphthoquinone photosensitizer (DNQ), background absorption cannot be generated to influence.Therefore, the compound of this type can be used as new photoinitiator, and is expected to shine in the field of semiconductors.

A photoresist composition, a pattern forming method using near-field surface layer imaging, and a deposition device. The photoresist composition comprises: a solvent; a molecular glass compound, which is a calixarene derivative grafted with diazonaphthoquinone and serves as a film-forming component and a photosensitive component; and an affinity inhibitor, which is at least used for protecting a hydroxyl group in the photoresist composition, so as to improve the contrast ratio of an exposure area and a non-exposure area during the formation of a pattern. The photoresist composition can be exposed within the full thickness range of the photoresist by means of near-field photolithography, thereby achieving high-resolution imaging.

A composition including an acid-sensitive polymer comprising a first repeating unit derived from a monomer comprising an acid-decomposable group; a photoacid generator compound; a non-polymeric electron acceptor compound that has a greater electron affinity than an electron affinity of the photoacid generator compound, wherein the non-polymeric electron acceptor compound does not generate a photoacid, and wherein the non-polymeric electron acceptor compound does not comprise a plurality of diazonaphthoquinone (DNQ) groups; and a solvent, wherein the solvent is present in the composition in an amount greater than 50 weight percent, based on total weight of the composition, wherein the composition is a positive-acting EUV photoresist or an electron beam resist.

The application discloses a photoresist composition and a photoetching process, and belongs to the photoetching technical field.The photoresist composition comprises the following components: high-molecular-weight phenolic resin, low-molecular-weight phenolic resin, diazonaphthoquinone photosensitizer, phenolic hydroxyl compound and solvent, wherein the molecular weight of the high-molecular-weight phenolic resin is greater than or equal to 10000, the molecular weight of the low-molecular-weight phenolic resin is less than or equal to 4000, and the mass ratio of the high-molecular-weight phenolic resin to the low-molecular-weight phenolic resin is 0.1-9:1.The photoresist composition provided by the embodiment of the application can have improved low exposure energy and high resolution, high film retention rate, excellent substrate adhesion and film thickness uniformity.

The invention discloses a benzotriazole-diazo naphthoquinone photoinitiator with a bridging structure, which belongs to the field of near ultraviolet photoinitiators, the chemical structural general formula of the benzotriazole-diazo naphthoquinone photoinitiator is as follows: in the structural formula, R represents hydrogen, hydroxyl and a diazo naphthoquinone ester group, and at least one substituent of R is the diazo naphthoquinone ester group. The benzotriazole-diazonaphthoquinone type photoinitiator with a bridging structure is synthesized through a simple and efficient method, the ultraviolet visible absorption peak value of the photoinitiator is subjected to red shift to 360 nm, the half-peak width is about 60 nm and extends to about 450 nm, the requirement for near ultraviolet absorption is completely met, and the photoinitiator has the advantages that the photoinitiator is simple and efficient, and the photoinitiator is suitable for industrial production. The near ultraviolet light initiator can be used as a photocuring material by initiating monomer polymerization under the irradiation of near ultraviolet light.

The disclosed subject matter relates to resist compositions that include: (A) an acetal functionalized acrylic polymer component comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7); (B) a tert-alkyl functionalized acrylic polymer component comprising repeat units selected from ones having structure (1a), (2a), (3a), (4a), (5a), (6a), and (7a); (C) a phenolic resin component comprising a Novolak-based resin; (D) a photo acid generator (PAG) component and (E) a solvent component where the resist compositions does not include a diazonaphthoquinone (DNQ) component.

The application discloses a series of compounds with a multi-benzene ring hydroxyl system and application of the compounds as photoinitiators. The multi-benzene ring hydroxyl aromatic system compound of the application can be combined with diazonium naphthoquinone (DNQ) to form a photoresist which is loaded on the surface of a substrate, and the photoresist can be processed by a photoetching process to obtain a high depth gradient, thus having practical significance for becoming an I-line photoinitiator.

The invention provides a positive photoresist composition, which is prepared from the following components in parts by weight: 100 parts of resin, 0.5 to 10 parts of diazonaphthoquinone compound, 1 to 10 parts of photoacid generator and 0.01 to 0.5 part of azole compound, the azole compound has a structure as shown in a formula I or a formula II. The nitrogen azole compound with a specific structure is compounded with the photosensitizer, the photoacid generator and the resin according to a specific content, so that the positive photoresist composition has high resolution, good electrocoppering process compatibility and ideal developing performance; and the positive photoresist composition is easy to remove.

The present disclosure provides a photoresist composition, a pattern forming method of near-field surface layer imaging, and a deposition apparatus. The photoresist composition includes a solvent; a molecular glass compound, which is a calixarene derivative grafted with a diazonaphthoquinone, as a film forming component and a photosensitive component; and an affinity inhibitor, which is used at least to protect a hydroxyl group in the photoresist composition, to improve contrast between an exposed region and a non-exposed region during a pattern forming process. The photoresist composition of the present disclosure can be exposed over the entire thickness of the photoresist using near-field lithography, thereby achieving high-resolution pattern imaging.

The application relates to the technical field of photoresists, in particular to a G / I line photoresist suitable for liquid crystal display panels and semiconductor manufacturing. The photoresist is a kind of positive photoresist, which comprises a phenolic polymer resin, a diazonaphthoquinone type photo initiator, a solvent and an additive. A diazonaphthoquinone sulfonate type photosensitive compound is prepared by using a multi-carbon-based enol compound as a precursor, and the photosensitive compound is matched with the phenolic polymer resin, the solvent and the additive to configure the photoresist, which has high resolution, good photosensitivity, excellent thermal stability and good etching resistance.

The invention provides a high-resolution positive photoresist composition, a preparation method thereof and a photoetching structure, and relates to the technical field of photoetching. The high-resolution positive photoresist composition comprises phenolic resin, photosensitizer copolymer film-forming resin, a diazo naphthoquinone photosensitive compound and a solvent, the photosensitizer copolymer film-forming resin is at least one of a first photosensitive compound, a second photosensitive compound and a third photosensitive compound; according to the composition, the photosensitive group is copolymerized into the film-forming resin, so that the distribution uniformity of the photosensitizer in a system can be improved, local enrichment is reduced, and the pattern boundary definition and the line width control precision are remarkably improved. The copolymerization structure enhances the consistency of photoreaction, reduces the exposure dose demand, inhibits the T-topping phenomenon, and improves the side wall perpendicularity and the development quality. The structural difference of the first to third photosensitive compounds enables the material performance to be adjustable, gives consideration to the resolution, the developing speed and the thermal stability, and is beneficial to meet different micromachining requirements.

This invention relates to a positive photoresist composition and a cured film, and a method for synthesizing the same. The composition includes an organic solvent and a solute dissolved in the organic solvent. The solute comprises a copolymer of acrylates containing side-epoxy groups and terminal carboxyl groups, a diazonaphthoquinone compound, and a surfactant. The copolymer of acrylates containing side-epoxy groups and terminal carboxyl groups is polymerized from glycidyl acrylate, 3,4-epoxycyclohexyl acrylate, glycidyl methacrylate, 3,4-epoxycyclohexyl methacrylate, and one or more monomers that cannot contain unsaturated carboxylic acid monomers. The polymerization reaction uses azodicyanovalerate as a thermal polymerization initiator. During the formation of the cured film, the side-epoxy groups and terminal carboxyl groups in the polymer can increase the solubility in the developer, thereby improving resolution.

The invention belongs to the technical field of preparation of photosensitive materials, and particularly relates to a photosensitive polyimide composition with an adjustable taper angle and application of the photosensitive polyimide composition. Comprising first diazo naphthoquinone sulfonate, second diazo naphthoquinone sulfonate and polyamide acid resin, the first diazo naphthoquinone sulfonate has a siloxane group. The first diazo naphthoquinone sulfonate has a siloxane group, the group is easily combined with a Si-OH bond on a glass substrate, a film formed by the photosensitive polyimide photoresist composition tends to be distributed on the lower layer, and the two diazo naphthoquinone sulfonate are matched for use, so that in an alkali liquor developing process, the film can be rapidly developed by utilizing the difference in dissolution rate; the exposure part is relatively slow in dissolution at the early stage of development and relatively fast in dissolution at the later stage of development, so that the exposure bottom can be ensured to reach the target critical dimension CD, the unexposed part is relatively fast in dissolution at the upper side wall at the early stage of development and relatively slow in dissolution at the lower side wall at the later stage of development, and the formed taper angle becomes smaller, so that the technical effect of adjustable taper angle is realized.