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Polyimide and light-sensitive resin composition comprising the same

一种聚酰亚胺、光敏树脂的技术，应用在正型光敏树脂组合物领域，能够解决固化薄膜吸收系数高、耐碱特性差等问题，达到高分辨率、高光敏度、佳薄膜特性的效果

Inactive Publication Date: 2012-03-21
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, although polyimide or polyamic acid ester having acid groups on the branched chain has excellent resolution, etc., because acid groups still remain in the polymer even after curing, there is still a resulting cured film High absorption coefficient, or poor alkali resistance and other problems

Method used

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  • Polyimide and light-sensitive resin composition comprising the same
  • Polyimide and light-sensitive resin composition comprising the same
  • Polyimide and light-sensitive resin composition comprising the same

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0136] Synthesis Example 1: Preparation of polyimide shown in Chemical Formula 1

[0137] 11.0 g of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane and 40 g of γ-butyrolactone were sequentially added into a 100 mL round-bottomed flask, and stirred slowly to dissolve them completely. While the flask was warmed in a double-layer boiler and kept at room temperature, 5.9 g of butane-1,2,3,4-tetracarboxylic dianhydride was slowly added to the solution. This mixture was stirred at room temperature for 16 hours, and then 7 g of toluene was added to the mixture. After installing a dean-stark distillation unit to remove water, the mixture was refluxed at 140°C for 3 hours. Next, the solution was cooled to room temperature, slowly poured into a mixture of methanol:water=1:4, and then solidified. Next, the solution was dried at 40° C. for one day in a vacuum drying oven to obtain 14 g of a polyimide resin.

[0138] IR was used to detect the characteristic peak of the polyimide pro...

Synthetic example 2

[0139] Synthesis Example 2: Preparation of polyamic acid shown in Chemical Formula 2

[0140] 73.3 g of 4,4'-diaminodiphenyl ether and 300 g of γ-butyrolactone were successively added to a round-bottomed jacketed process vessel with a capacity of 1 L, and stirred slowly to completely dissolve them. When the temperature of the jacket of the reaction vessel was 20°C, 55.8 g of 3,3',4,4'-diphenylsulfonetetracarboxylic dianhydride was slowly added to the solution and stirred. Thereafter, the mixture was stirred for 2 hours to fully react, and then stirred at room temperature for 16 hours to prepare a polyamic acid.

[0141] IR was used to detect the characteristic peak of the polyamic acid product, and at the same time, its weight average molecular weight was detected to be 50,000, and its polydispersity index (PDI, polydisperse index) detected by GPC was 1.6.

Embodiment 1

[0142] Embodiment 1: the preparation example of photosensitive resin composition (polyimide composition)

[0143] 0.5 g of diazonaphthoquinone ester compound (TPPA 320: OH or OD is selectively used according to the ratio OD / (OD+OH)=2 / 3) as the photoactive compound, and 4 g of γ-butyrolactone (GBL ) solvent was added to 1.6 g of soluble polyimide prepared in Synthesis Example 1, followed by stirring at room temperature for 1 hour. The mixture was filtered with a filter having a pore diameter of 1 μm to prepare a photosensitive resin composition.

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Abstract

Provided are a polyimide and a light-sensitive resin composition comprising the same, which are employed in the buffer coatings of semiconductors. The polyimide is a polyimide polymer represented by Formula 1. Further, provided is a light-sensitive resin composition which comprises: 1) a soluble BDA series polyimide having an i-ray transmittance of at least 70%; 2) poly(amic acid) having a percentage elongation of at least 40%; 3) a novolac resin; and 4) a diazonaphthoquinone-based light-sensitive substance, and which has a high degree of resolution, high sensitivity, outstanding film characteristics and mechanical properties which are characteristics required of the buffer coatings of semiconductors.

Description

【Technical field】 [0001] This application claims priority from No. 10-2009-0064932 filed with the Korean Patent Office on July 16, 2009, which is incorporated herein by reference. [0002] The invention relates to a polyimide and a positive-type photosensitive resin composition containing the polyimide as an adhesive resin, wherein the repeating unit of the polyimide contains an organic group derived from a anhydride. [0003] More specifically, the present invention relates to an alkali-soluble photosensitive resin composition comprising polyimide (PI), polyamic acid (PAA) and phenolic resin (novolak resin), providing a A photosensitive resin composition with better physical properties can be obtained through the composition and component ratio. 【Background technique】 [0004] In recent years, in the field of semiconductor devices based on semiconductors and liquid crystal display devices, there is an increasing tendency to manufacture electronic components with high inte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/10C08L79/08G03F7/039G03F7/004
CPCC08L2205/02C08L79/08C08G73/1042G03F7/0233G03F7/0048C08L61/04
Inventor 金相佑朴灿晓金璟晙成惠兰申世珍郑惠元曺正镐
Owner LG CHEM LTD
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