Photosensitive resin composition and process for producing the same

Abstract

A photosensitive resin composition comprises a base resin (e.g., novolak resins, polyvinylphenol-series polymers), a first photoactive ingredient (e.g., diazobenzoquinone derivatives, diazonaphthoquinone derivatives) and a second photoactive ingredient (e.g., mixtures with azide compounds) each having an absorption range at wavelength lambd1 or lambd2, the wavelengths thereof being different from each other. Between the first and second photoactive ingredients, at least one photoactive ingredient is substantially inert at the absorption wavelength of the other. After exposing the photosensitive resin composition to a light to form a pattern, the whole surface of the photosensitive layer is exposed to a light of the other wavelength to make the surface hardly soluble (in the case a positive pattern is formed) or readily soluble (in the case a negative pattern is formed) in a developer, and developed, thereby forming a pattern of high resolution. Utilizing an existing exposure system, there can be obtained photosensitive resin compositions (especially, resists for semiconductor production) having improved sensitivity and resolution.

Description

[0001] The present invention relates to photosensitive resin compositions (resists) suitable for minute-processing of semiconductors by using ultraviolet rays or far-ultraviolet rays (including excimer laser and so on), a method for producing the same, and a method for forming patterns using the same.[0002] There have been known compositions comprising an alkali-soluble novolak resin and a diazonaphthoquinone derivative as resists for semiconductors. These photosensitive resin compositions have been used as positive resists utilizing the characteristic that a diazonaphthoquinone group is decomposed upon irradiation with a light of 300 to 500 nm wavelength to form a carboxyl group, allowing the compositions to change from an alkali-insoluble state to an alkali-soluble state.[0003] On the other hand, with a rise in the integration level of integrated circuits of semiconductors, the integrated circuits are getting minuter and minuter in recent years, and the formation of patterns in su...

AI Technical Summary

Benefits of technology

[0027] Suitable as the azide compound are those efficiently generate nitrogen gas upon photoirradiation and form nitrene. For an increased crosslinking efficiency with the base resin (e.g., novolak resins, polyvinylphenol-series polymers), diazide compounds are preferable.

[0029] The acid generator generates an acid upon photoirradiation and accelerates the crosslinking of the base resin (e.g., in the case where a novolak resin is used as the base resin), or deprotects a protecting group upon exposure for pattern forming (e.g., in the case where the base resin is a polyvinylphenol resin) and therefore is effective for making the patterned areas of the base resin (a positive-type resin) readily alkali-soluble.

[0044] According to the present invention, the resolution can be improved without employing an exposure light at a shorter wavelength. In further detail, a light for imaging exposure irradiated on a photosensitive material through a mask does not show an accurate rectangular light distribution corresponding to the mask, but is "vague" due to the diffraction and turning of the light. Thus, a pattern on a positive-type photosensitive material is made angular like a triangle. In the case of a negative-type photosensitive material, since the surface of strong light absorption is preferentially cured, a pattern is made in a T-shape. Therefore the resolution is deteriorated. In contrast, since overall exposure after patternwise exposure makes the surface of a resist layer of a positive-type photosensitive material hardly or slightly soluble, dissolution of the surface of the resist layer of intense light intensity is inhibited. In a negative-type photosensitive material, the surface of a resist layer is made readily soluble (in other words, the formation of a layer having the surface hardly soluble is inhibited), leading to an acceleration in the developability of the surface. Thus, a pattern having a rectangular cross section is formed with a pattern profile of high contrast (.gamma.-value) and the resolution largely improved. Moreover, even when the patternwise exposure is done slightly out of focus, the above-mentioned step of making the surface of the resist layer hardly soluble or readily soluble improves the resolution, consequently resulting in a significant improvement in focus latitude.

[0046] Furthermore, according to the present invention, the hydrophilicity and the hydrophobicity of the surface of a photosensitive material are controllable, and therefore, uniformity in development can be improved. Recently, especially in the field of resist, there is a growing trend toward making resist layers hydrophobic along with improvements in performance. Thus, the wettability with an alkaline developer is deteriorated and, particularly with a substrate having a large area, the developer hardly spreads out uniformly over the entire surface of the substrate, which results in a failure in development with uniformity. According to the present invention, however, in the case of a positive-type material in which only the exposed areas are made hydrophilic, for example, a material which generates an acid upon irradiation of a light of wavelength .lambda.2 is previously added and an overall exposure with a light of wavelength .lambda.2 is conducted to generate an acid only near the surface and make the surface hydrophilic, thereby improving the wettability of the non-exposed areas.

Problems solved by technology

However, the use of novolak resin / diazonaphthoquinone-type positive resists having been employed for the production of semiconductor integrated circuits using g-line or i-line leads to considerable deterioration in sensitivity and resolution even with KrF excimer laser or ArF excimer laser owing to the absorption ability of the novolak resin.

Therefore, the novolak resin / diazonaphthoquinone-type positive resists are lacking in practicability.

Moreover, minute processing with KrF or ArF excimer laser has a number of technical problems to be solved with respect to the choice of, for example, light sources, exposing devices such as a lens system and photosensitive materials (resists).

In addition, plant investment for applying the minute processing with KrF or ArF excimer laser to the practical production of semiconductors will be a vast sum of money.

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