The invention belongs to the technical field of
semiconductor power module packaging, and particularly relates to a
chip eutectic
welding process method and application, and the process method comprises the following steps: employing a conventional magnetron
sputtering or
electron beam
evaporation technology to manufacture a low-melting-point eutectic
welding metal layer on the back surface of a
chip; mounting the eutectic
welding metal layer of the
chip on the
metal circuit topology layer of the
ceramic substrate by adopting a module packaging conventional chip mounter; heating and pressurizing equipment is adopted to heat and pressurize the chip on the
ceramic substrate, and welding can be completed after the chip is cooled. The eutectic welding metal layer is arranged on the back surface of the chip to replace
silver paste sintered by silver or
copper paste sintered by
copper, and the chip is welded on the
copper layer of the
ceramic substrate through heating and pressurizing, so that the processes of
screen printing of the welding paste, hot pasting
machine pasting and welding paste baking are omitted, the oxidation of the
silver paste or the copper paste is avoided, the
thermal resistance can reach the same level of the
silver paste or the copper paste, and the production efficiency is improved. A silver
sintering or copper
sintering process can be greatly simplified, the
processing cost is reduced, and the yield is improved.